IXTA12N50P IXTI12N50P
IXTP12N50P
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
TO-220 (IXTP) Outline
(TJ = 25°C, unless otherwise specified)
gfs
VDS= 10V, ID = 0.5 • ID25, Note 1
7.5
13
S
Ciss
Coss
Crss
1830
182
16
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10Ω (External)
22
ns
27
65
20
ns
ns
ns
Qg(on)
Qgs
Qgd
29
11
10
nC
nC
nC
Pins: 1 - Gate
2 - Drain
VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCS
0.62 °C/W
°C/W
(TO-220)
0.50
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
VGS = 0V
12
A
A
V
ISM
Repetitive, pulse width limited by TJM
IF = IS, VGS = 0V, Note 1
48
VSD
1.5
Leaded 263 (IXTI) Outline
trr
QRM
IRM
300 ns
IF = 6A, -di/dt = 150A/μs,
VR = 100V, VGS = 0V
2.8
18.2
μC
A
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
TO-263 (IXTA) Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
