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IXTP160N10T

型号：

IXTP160N10T

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

286 K

下载PDF手册
Preliminary Technical Information  
TrenchTM  
Power MOSFET  
VDSS = 100V  
ID25 = 160A  
RDS(on) 7.0m  
IXTA160N10T  
IXTP160N10T  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263  
(IXTA)  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-220  
(IXTP)  
TJ = 25C to 175C  
TJ = 25C to 175C, RGS = 1M  
100  
100  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G
D
S
ID25  
IL(RMS)  
IDM  
TC = 25C (Chip Capability)  
Lead Current Limit, RMS  
TC = 25C, Pulse Width Limited by TJM  
160  
120  
430  
A
A
A
D (Tab)  
G = Gate  
D
= Drain  
S = Source Tab = Drain  
IA  
TC = 25C  
TC = 25C  
25  
A
EAS  
500  
mJ  
dV/dt  
PD  
IS IDM, VDD VDSS,TJ 175C  
TC = 25C  
3
V/ns  
W
Features  
430  
Ultra-Low On Resistance  
Avalanche Rated  
Low Package Inductance  
- Easy to Drive and to Protect  
175C Operating Temperature  
Fast Intrinsic Diode  
TJ  
-55 ... +175  
175  
C  
C  
C  
TJM  
Tstg  
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Advantages  
FC  
Mounting Force (TO-263)  
Mounting Torque (TO-220)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
Md  
Easy to Mount  
Space Savings  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
High Power Density  
Applications  
Automotive  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min. Typ.  
Max.  
- Motor Drives  
- 42V Power Bus  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250A  
VDS = VGS, ID = 250A  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
100  
2.5  
V
- ABS Systems  
4.5  
            200 nA  
A  
V
DC/DC Converters and Off-line UPS  
Primary Switch for 24V and 48V  
Systems  
Distributed Power Architechtures  
IDSS  
5
and VRMs  
Electronic Valve Train Systems  
High Current Switching  
TJ = 150C  
VGS = 10V, ID = 25A, Notes 1& 2  
250  A  
7.0 m  
RDS(on)  
6.1  
Applications  
High Voltage Synchronous Recifier  
DS99650A(11/18)  
© 2018 IXYS CORPORATION, All rights reserved  
IXTA160N10T  
IXTP160N10T  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
TO-263 Outline  
A
(TJ = 25C, Unless Otherwise Specified)  
E
E1  
C2  
L1  
L2  
gfs  
VDS = 10V, ID = 60A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
65  
102  
S
D1  
D
4
H
A1  
1
2
3
Ciss  
Coss  
Crss  
6600  
880  
pF  
pF  
pF  
b
b2  
L3  
c
e
e
0.43 [11.0]  
0  
135  
0.34 [8.7]  
td(on)  
tr  
td(off)  
tf  
33  
61  
49  
42  
ns  
ns  
ns  
ns  
0.66 [16.6]  
A2  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 25A  
RG = 5(External)  
1 - Gate  
2,4 - Drain  
3 - Source  
0.20 [5.0]  
0.10 [2.5]  
0.12 [3.0]  
0.06 [1.6]  
Qg(on)  
Qgs  
132  
37  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 25A  
Qgd  
40  
RthJC  
RthCH  
0.35C/W  
C/W  
TO-220  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
IS  
VGS = 0V  
160  
A
A
ISM  
VSD  
trr  
Repetitive, Pulse Width Limited by TJM  
IF = 25A, VGS = 0V, Note 1  
430  
1.0  
TO-220 Outline  
A
E
oP  
A1  
V
H1  
Q
IF = 25A, VGS = 0V  
60  
ns  
D2  
E1  
D
-di/dt = 100A/s, VR = 50V  
D1  
A2  
EJECTOR  
PIN  
L1  
L
3X b  
e
c
Notes: 1. Pulse test, t 300s; duty cycle, d  2%.  
e1  
3X b2  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5mm or less from the package body.  
1 - Gate  
2,4 - Drain  
3 - Source  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXTA160N10T  
IXTP160N10T  
Fig. 1. Output Characteristics @ TJ = 25oC  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
160  
140  
120  
100  
80  
V
GS  
= 10V  
9V  
8V  
V
= 10V  
GS  
250  
200  
150  
100  
50  
9V  
8V  
7V  
7V  
60  
6V  
5V  
40  
6V  
20  
0
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
0
1
2
3
4
5
6
7
8
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 160A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150oC  
160  
140  
120  
100  
80  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
8V  
GS  
V
= 10V  
GS  
7V  
6V  
I
= 160A  
D
I
= 80A  
D
60  
40  
20  
5V  
0
0
0.4  
0.8  
1.2  
1.6  
2
2.4  
2.8  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 80A Value vs.  
Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
140  
120  
100  
80  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
V
= 10V  
15V  
GS  
T = 175oC  
J
External Lead Current Limit  
60  
40  
T = 25oC  
J
20  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
50  
100  
150  
200  
250  
300  
TC - Degrees Centigrade  
ID - Amperes  
© 2018 IXYS CORPORATION, All rights reserved  
IXTA160N10T  
IXTP160N10T  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
200  
180  
160  
140  
120  
100  
80  
140  
120  
100  
80  
T
J
= - 40oC  
25oC  
150oC  
60  
T
J
= 150oC  
25oC  
- 40oC  
60  
40  
40  
20  
20  
0
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
0
50  
100  
150  
200  
VGS - Volts  
ID - Amperes  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
10  
9
8
7
6
5
4
3
2
1
0
300  
250  
200  
150  
100  
50  
V
= 50V  
DS  
I
I
= 25A  
D
G
= 10mA  
T
J
= 150oC  
T
J
= 25oC  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
1.3  
1.4  
0
20  
40  
60  
80  
100  
120  
140  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal Impedance  
Fig. 11. Capacitance  
1
10,000  
1,000  
100  
C
iss  
f = 1 MHz  
C
C
oss  
0.1  
rss  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
0
5
10  
15  
20  
25  
30  
35  
40  
VDS - Volts  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTA160N10T  
IXTP160N10T  
Fig. 14. Resistive Turn-on  
Fig. 13. Resistive Turn-on  
Rise Time vs. Drain Current  
Rise Time vs. Junction Temperature  
90  
80  
70  
60  
50  
40  
30  
20  
75  
70  
65  
60  
55  
50  
45  
40  
35  
30  
R
= 5  
V
= 10V  
GS  
  
G
V
= 50V  
DS  
T = 25oC  
J
R
= 5  
V
= 10V  
GS  
  
G
V
= 50V  
DS  
I
= 50A  
D
T = 125oC  
J
I
= 25A  
D
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
25  
30  
35  
40  
45  
50  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
170  
150  
130  
110  
90  
65  
90  
120  
110  
100  
90  
t f  
R
td(off)  
t r  
td(on)  
T = 125oC, V = 10V  
60  
55  
50  
45  
40  
35  
30  
= 5 , V = 10V  
G
GS  
J
GS  
80  
70  
60  
50  
40  
30  
V
= 50V  
V
= 50V  
DS  
DS  
I
I
= 25A  
= 50A  
D
D
I
= 50A  
D
I
= 25A  
D
80  
I
I
= 25A  
D
D
70  
70  
50  
= 50A  
35  
60  
30  
25  
45  
55  
65  
75  
85  
95  
105  
115  
125  
4
6
8
10  
12  
14  
16  
18  
20  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
44  
43  
42  
41  
40  
39  
38  
80  
74  
68  
62  
56  
50  
44  
150  
130  
110  
90  
220  
190  
160  
130  
100  
70  
t f  
R
td(off)  
t f  
td(off)  
= 5 , VGS = 10V  
T = 125oC, V = 10V  
G
TJ = 125oC  
J
GS  
V
DS = 50V  
V
= 50V  
DS  
I
= 25A  
D
T = 25oC  
J
I
= 50A  
D
TJ = 125oC  
70  
TJ = 25oC  
50  
30  
40  
25  
30  
35  
40  
45  
50  
4
6
8
10  
12  
14  
16  
18  
20  
ID - Amperes  
RG - Ohms  
© 2018 IXYS CORPORATION, All rights reserved  
IXYS REF: T_160N10T (5V)11-16-06-A  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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