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IXTP60N10TM

型号：

IXTP60N10TM

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

187 K

下载PDF手册
Preliminary Technical Information  
TrenchMVTM  
Power MOSFET  
VDSS = 100V  
ID25 = 33A  
RDS(on) ≤ 19mΩ  
IXTP60N10TM  
N-Channel Enhancement Mode  
Avalanche Rated  
OVERMOLDED TO-220 W/ FORMED  
LEAD (IXTP...M)  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
100  
100  
V
V
VGSM  
Transient  
± 30  
V
D
ID25  
IDM  
TC = 25°C  
33  
180  
A
A
TC = 25°C, pulse width limited by TJM  
G
Isolated Tab  
S
IA  
EAS  
TC = 25°C  
TC = 25°C  
10  
500  
A
mJ  
G = Gate  
S = Source  
D = Drain  
PD  
TC = 25°C  
60  
W
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
Features  
TL  
TSOLD  
1.6mm (0.062in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
•Plastic overmolded tab for electrical  
•iLsoowlatRioDnS(ON)  
Md  
Mounting torque  
1.13/10  
2.5  
Nm/lb.in  
g
Weight  
- for minimum on-state conduction  
losses  
•Fast switching  
Advantages  
z
Easy to mount  
Space savings  
High power density  
z
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 50μA  
VGS = ± 20V, VDS = 0V  
100  
2.5  
V
V
4.5  
z DC-DC converters  
z Battery chargers  
± 100 nA  
μA  
100 μA  
z Switched-mode and resonant-mode  
power supplies  
IDSS  
VDS = VDSS  
VGS = 0V  
1
TJ = 150°C  
z DC choppers  
z AC motor drives  
RDS(on)  
VGS = 10V, ID = 25A, Notes 1, 2  
19 mΩ  
z Uninterruptible power supplies  
z High speed power switching  
applications  
DS100022(08/008)  
© 2008 IXYS CORPORATION, All rights reserved  
IXTP60N10TM  
Symbol  
Test Conditions  
Characteristic Values  
OVERMOLDED TO-220 W/ FORMED  
LEAD (IXTP...M)  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
42  
Max.  
gfs  
VDS= 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
25  
S
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
Ciss  
Coss  
Crss  
td(on)  
tr  
2650  
335  
60  
27  
Resistive Switching Times  
2 3  
1
40  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 10A  
td(off)  
tf  
43  
RG = 15Ω (External)  
37  
Qg(on)  
Qgs  
Qgd  
RthJC  
49  
VGS= 10V, VDS = 0.5 • VDSS, ID = 10A  
15  
Terminals: 1 - Gate  
2 - Collector  
11  
3 - Emitter  
2.5 °C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
60  
A
A
ISM  
VSD  
trr  
Repetitive, pulse width limited by TJM  
IF = 25A, VGS = 0V, Note 1  
240  
1.2  
V
59  
3.8  
ns  
A
IF = 30A, VGS = 0V  
-di/dt = 100A/μs  
VR = 50V  
IRM  
QRM  
112  
nC  
Notes 1. Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2%.  
2. On through-hole packages, RDS(on) Kelvin test contact location must be  
5mm or less from the package body.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTP60N10TM  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
200  
180  
160  
140  
120  
100  
80  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
VGS = 10V  
VGS = 10V  
9V  
8V  
9V  
7V  
6V  
8V  
7V  
6V  
60  
40  
20  
0
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2  
VDS - Volts  
0
2
4
6
8
10 12 14 16 18 20 22 24 26  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 30A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGS = 10V  
VGS = 10V  
9V  
8V  
7V  
I D = 60A  
I D = 30A  
6V  
5V  
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4  
VDS - Volts  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 30A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
40  
35  
30  
25  
20  
15  
10  
5
3.2  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
15V  
TJ = 175ºC  
- - - -  
TJ = 25ºC  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
15  
30  
45  
60  
75  
90  
105 120 135 150  
ID - Amperes  
TC - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXTP60N10TM  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
70  
60  
50  
40  
30  
20  
10  
0
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
25ºC  
TJ = 150ºC  
25ºC  
- 40ºC  
150ºC  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
4.0  
0.4  
0
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
1.4  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
180  
160  
140  
120  
100  
80  
VDS = 50V  
I D = 10A  
I
G = 10mA  
TJ = 150ºC  
60  
TJ = 25ºC  
40  
20  
0
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
10,000  
1,000  
100  
10.00  
1.00  
0.10  
0.01  
= 1 MHz  
f
C
iss  
C
oss  
C
rss  
10  
5
10  
15  
20  
25  
30  
35  
0.00001 0.0001  
0.001  
0.01  
0.1  
1
10  
100  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
Pulse Width - Seconds  
IXYS REF: T_60N10T(2V)8-07-08-A  
IXTP60N10TM  
Fig. 13. Resistive Turn-on Rise Time  
vs. Junction Temperature  
Fig. 14. Resistive Turn-on Rise Time  
vs. Drain Current  
60  
55  
50  
45  
40  
35  
30  
25  
60  
55  
50  
45  
40  
35  
30  
25  
RG = 15Ω  
GS = 10V  
VDS = 50V  
RG = 15Ω  
VGS = 10V  
VDS = 50V  
V
TJ = 25ºC  
I D = 30A  
TJ = 125ºC  
I D = 10A  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
10  
12  
14  
16  
18  
20  
22  
24  
26  
28  
30  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on Switching Times  
vs. Gate Resistance  
Fig. 16. Resistive Turn-off Switching Times  
vs. Junction Temperature  
170  
150  
130  
110  
90  
80  
70  
60  
50  
40  
30  
20  
10  
39  
64  
60  
56  
52  
48  
44  
40  
t r  
t
d(on) - - - -  
TJ = 125ºC, VGS = 10V  
38  
37  
36  
35  
34  
33  
I D = 10A  
VDS = 50V  
t f  
t
d(off) - - - -  
I D = 30A  
RG = 15Ω, VGS = 10V  
VDS = 50V  
10A < I D < 30A  
I D = 30A  
I D = 10A  
70  
50  
30  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
15  
20  
25  
30  
35  
40  
45  
50  
55  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 18. Resistive Turn-off Switching Times  
vs. Gate Resistance  
Fig. 17. Resistive Turn-off Switching Times  
vs. Drain Current  
120  
110  
100  
90  
185  
170  
155  
140  
125  
110  
95  
40  
39  
38  
37  
36  
35  
34  
33  
32  
67  
63  
59  
55  
51  
47  
43  
39  
35  
t f  
t
d(off) - - - -  
I D = 10A, 30A  
t f  
t
d(off) - - - -  
RG = 15Ω, VGS = 10V  
TJ = 125ºC, VGS = 10V  
VDS = 50V  
VDS = 50V  
TJ = 125ºC  
80  
70  
60  
50  
80  
TJ = 25ºC  
40  
65  
30  
50  
10  
12  
14  
16  
18  
20  
22  
24  
26  
28  
30  
15  
20  
25  
30  
35  
40  
45  
50  
55  
ID - Amperes  
RG - Ohms  
© 2008 IXYS CORPORATION, All rights reserved  
IXYS REF: T_60N10T(2V)8-07-08-A  
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