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IXTP240N055T

型号：

IXTP240N055T

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

174 K

下载PDF手册
Preliminary Technical Information  
TrenchMVTM  
Power MOSFET  
IXTA240N055T  
IXTP240N055T  
VDSS = 55  
ID25 = 240  
RDS(on) ≤ 3.6 mΩ  
V
A
N-Channel Enhancement Mode  
Avalanche Rated  
Symbol  
Test Conditions  
Maximum Ratings  
TO-263 (IXTA)  
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C; RGS = 1 MΩ  
55  
55  
V
V
G
S
VGSM  
Transient  
± 20  
V
(TAB)  
ID25  
ILRMS  
IDM  
TC = 25°C  
240  
75  
650  
A
A
A
Lead Current Limit, RMS  
TO-220 (IXTP)  
TC = 25°C, pulse width limited by TJM  
IAR  
EAS  
TC = 25°C  
TC = 25°C  
25  
1.0  
A
J
dv/dt  
PD  
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS  
TJ ≤ 175°C, RG = 5 Ω  
3
V/ns  
G
(TAB)  
D
S
TC = 25°C  
480  
W
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-40 ... +175  
°C  
°C  
°C  
Features  
ꢀUltra-low On Resistance  
ꢀUnclamped Inductive Switching (UIS)  
rated  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
ꢀLow package inductance  
- easy to drive and to protect  
ꢀ175 °C Operating Temperature  
Md  
Mounting torque (TO-220)  
1.13 / 10 Nm/lb.in.  
Weight  
TO-220  
TO-263  
3
g
g
2.5  
Advantages  
ꢀ
Easy to mount  
ꢀ
Space savings  
ꢀ
High power density  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
Applications  
Automotive  
- Motor Drives  
- High Side Switch  
- 12VBattery  
ꢀ
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 μA  
VDS = VGS, ID = 250 μA  
VGS = ± 20 V, VDS = 0 V  
55  
V
V
2.0  
4.0  
± 200  
nA  
- ABS Systems  
ꢀ
DC/DC Converters and Off-line UPS  
IDSS  
VDS = VDSS  
VGS = 0 V  
5
μA  
μA  
ꢀ
Primary- Side Switch  
TJ = 150°C  
250  
ꢀ
High Current Switching  
Applications  
RDS(on)  
VGS = 10 V, ID = 25 A, Notes 1, 2  
3.0  
3.6 mΩ  
DS99627 (11/06)  
© 2006 IXYS CORPORATION All rights reserved  
IXTA240N055T  
IXTP240N055T  
Symbol  
TestConditions  
Characteristic Values  
TO-263AA (IXTA) Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS= 10 V; ID =60 A, Note 1  
75  
132  
S
Ciss  
Coss  
Crss  
7600  
1240  
260  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
Resistive Switching Times  
VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A  
RG = 5 Ω (External)  
39  
54  
63  
75  
ns  
ns  
ns  
ns  
Pins: 1 - Gate  
2 - Drain  
3 - Source 4, TAB - Drain  
Qg(on)  
Qgs  
170  
32  
nC  
nC  
nC  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A  
A
A1  
4.06  
2.03  
4.83  
2.79  
.160  
.080  
.190  
.110  
Qgd  
48  
b
b2  
0.51  
1.14  
0.99  
1.40  
.020  
.045  
.039  
.055  
RthJC  
RthCS  
0.31°C/W  
°C/W  
c
c2  
0.46  
1.14  
0.74  
1.40  
.018  
.045  
.029  
.055  
TO-220  
0.50  
D
D1  
8.64  
7.11  
9.65  
8.13  
.340  
.280  
.380  
.320  
E
E1  
e
9.65  
6.86  
2.54  
10.29  
8.13  
BSC  
.380  
.270  
.100  
.405  
.320  
BSC  
Source-Drain Diode  
L
14.61  
2.29  
1.02  
1.27  
0
15.88  
2.79  
1.40  
1.78  
0.38  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.015  
Symbol  
Test Conditions  
Characteristic Values  
L1  
L2  
L3  
L4  
TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0 V  
240  
A
A
R
0.46  
0.74  
.018  
.029  
ISM  
VSD  
trr  
Pulse width limited by TJM  
IF = 50 A, VGS = 0 V, Note 1  
650  
1.2  
TO-220AB (IXTP) Outline  
V
IF = 25 A, -di/dt = 100 A/μs  
70  
ns  
VR = 25 V, VGS = 0 V  
Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %;  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5 mm or less from the package body.  
Pins: 1 - Gate  
2 - Drain  
PRELIMINARYTECHNICALINFORMATION  
3 - Source 4, TAB - Drain  
The product presented herein is under development. The Technical Specifications  
offered are derived from data gathered during objective characterizations of preliminary  
engineering lots; but also may yet contain some information supplied during a pre-  
production design evaluation. IXYS reserves the right to change limits, test conditions,  
and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405B2 6,759,692  
6,710,463  
7,005,734 B2  
7,063,975 B2  
6771478 B2 7,071,537  
IXTA240N055T  
IXTP240N055T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
200  
180  
160  
140  
120  
100  
80  
330  
300  
270  
240  
210  
180  
150  
120  
90  
V
= 10V  
8V  
GS  
V
= 10V  
GS  
9V  
8V  
7V  
7V  
6V  
6V  
5V  
60  
40  
60  
5V  
20  
30  
0
0
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 120A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
200  
180  
160  
140  
120  
100  
80  
V
= 10V  
GS  
V
= 10V  
GS  
9V  
8V  
7V  
I
= 240A  
D
6V  
5V  
I
= 120A  
D
60  
40  
20  
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 120A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
2.2  
2
140  
120  
100  
80  
External Lead Current Limit for TO-263 (7-Lead)  
T = 175ºC  
J
1.8  
1.6  
1.4  
1.2  
1
V
= 10V  
GS  
15V - - - -  
External Lead Current Limit for TO-3P, TO-220, & TO-263  
60  
40  
T = 25ºC  
J
20  
0
0.8  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
40  
80  
120  
160  
200  
240  
280  
320  
ID - Amperes  
TC - Degrees Centigrade  
© 2006 IXYS CORPORATION All rights reserved  
IXTA240N055T  
IXTP240N055T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
200  
180  
160  
140  
120  
100  
80  
270  
240  
210  
180  
150  
120  
90  
T
J
= - 40ºC  
25ºC  
150ºC  
T
J
= 150ºC  
25ºC  
- 40ºC  
60  
60  
40  
30  
20  
0
0
3
0.4  
0
3.5  
4
4.5  
5
5.5  
6
6.5  
0
40  
80  
120  
160  
200  
240  
280  
180  
10  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
300  
270  
240  
210  
180  
150  
120  
90  
10  
9
8
7
6
5
4
3
2
1
0
V
= 27.5V  
DS  
I
I
= 25A  
D
G
= 10mA  
T
= 150ºC  
J
T
= 25ºC  
J
60  
30  
0
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
1.3  
0
20  
40  
60  
80  
100  
120  
140  
160  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
10,000  
1,000  
100  
1.00  
0.10  
0.01  
C
iss  
C
oss  
C
rss  
f = 1 MHz  
5
10  
15  
20  
25  
30  
35  
40  
0.0001  
0.001  
0.01  
0.1  
1
VDS - Volts  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTA240N055T  
IXTP240N055T  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
57  
54  
51  
48  
45  
42  
39  
36  
33  
30  
60  
57  
54  
51  
48  
45  
42  
39  
36  
33  
30  
R
= 5  
Ω
G
V
V
= 10V  
GS  
DS  
T = 25ºC  
J
= 30V  
R
= 5  
Ω
G
V
V
= 10V  
GS  
DS  
= 30V  
I
= 50A  
D
I
= 25A  
D
T = 125ºC  
J
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
25  
30  
35  
40  
45  
50  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
180  
160  
140  
120  
100  
80  
66  
62  
58  
54  
50  
46  
42  
38  
34  
78  
100  
96  
92  
88  
84  
80  
76  
72  
68  
64  
60  
t r  
td(on) - - - -  
t f  
R
td(off) - - - -  
= 5 , V = 10V  
76  
74  
72  
70  
68  
66  
64  
62  
60  
58  
TJ = 125ºC, V = 10V  
GS  
G
Ω
GS  
I
= 50A  
25A  
D
V
= 30V  
V
= 30V  
DS  
DS  
I
= 25A  
D
I
= 50A  
25A  
D
I
= 50A  
D
60  
40  
20  
4
6
8
10  
12  
14  
16  
18  
20  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
78  
76  
74  
72  
70  
68  
66  
64  
62  
60  
58  
100  
96  
92  
88  
84  
80  
76  
72  
68  
64  
60  
225  
200  
175  
150  
125  
100  
75  
340  
300  
260  
220  
180  
140  
100  
60  
tf  
td(off)  
- - - -  
T = 125ºC, VGS = 10V  
J
I
= 25A  
D
V
DS = 30V  
TJ = 25ºC, 125ºC  
I
= 50A  
D
t f  
R
td(off)  
- - - -  
= 5 , VGS = 10V  
Ω
G
V
DS = 30V  
T = 25ºC, 125ºC  
J
50  
4
6
8
10  
12  
14  
16  
18  
20  
24  
28  
32  
36  
40  
44  
48  
RG - Ohms  
ID - Amperes  
IXYS REF: T_240N055T (61) 11-16-06-B.xls  
© 2006 IXYS CORPORATION All rights reserved  
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