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IXTP260N055T2

型号：

IXTP260N055T2

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

7 页

PDF大小：

313 K

下载PDF手册
TrenchT2TM  
Power MOSFET  
VDSS = 55V  
ID25 = 260A  
RDS(on) 3.3m  
IXTA260N055T2  
IXTP260N055T2  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 (IXTA)  
G
S
D (Tab)  
TO-220 (IXTP)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 175C  
55  
55  
V
V
VDGR  
TJ = 25C to 175C, RGS = 1M  
VGSM  
Transient  
20  
V
G
D
S
ID25  
IL(RMS)  
IDM  
TC = 25C  
External Lead Current Limit  
TC = 25C, Pulse Width Limited by TJM  
260  
120  
780  
A
A
A
D (Tab)  
G = Gate  
D
= Drain  
S = Source Tab = Drain  
IA  
TC = 25C  
TC = 25C  
100  
600  
A
EAS  
mJ  
PD  
TC = 25C  
480  
W
Features  
TJ  
-55 ... +175  
175  
C  
C  
C  
International Standard Packages  
Avalanche Rated  
TJM  
Tstg  
-55 ... +175  
Low Package Inductance  
Fast Intrinsic Rectifier  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
175°C Operating Temperature  
High Current Handling Capability  
ROHS Compliant  
High Performance Trench  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
Technology for extremely low RDS(on)  
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250A  
VDS = VGS, ID = 250A  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
55  
V
V
Applications  
2.0  
4.0  
Automotive Engine Control  
Synchronous Buck Converter  
           200 nA  
A  
(for Notebook SystemPower &  
IDSS  
5
General Purpose Point & Load)  
DC/DC Converters  
High Current Switching Applications  
TJ = 150C  
VGS = 10V, ID = 50A, Notes 1 & 2  
150 A  
3.3 m  
RDS(on)  
Power Train Management  
Distributed Power Architecture  
  
DS100028B(7/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTA260N055T2  
IXTP260N055T2  
Symbol  
Test Conditions  
Characteristic Values  
TO-263 Outline  
A
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
E
E1  
C2  
L1  
L2  
gfs  
VDS = 10V, ID = 60A, Note 1  
55  
94  
S
D1  
D
4
H
A1  
Ciss  
Coss  
Crss  
10.8  
1460  
215  
nF  
pF  
pF  
1
3
2
VGS = 0V, VDS = 25V, f = 1MHz  
b
b2  
L3  
c
e
e
0.43 [11.0]  
0  
0.34 [8.7]  
td(on)  
tr  
td(off)  
tf  
20  
27  
36  
24  
ns  
ns  
ns  
ns  
Resistive Switching Times  
0.66 [16.6]  
A2  
V
GS = 10V, VDS = 28V, ID = 100A  
1 - Gate  
2,4 - Drain  
3 - Source  
0.20 [5.0]  
0.10 [2.5]  
60.12 [3.0]  
0.06 [1.6]  
RG = 2(External)  
Qg(on)  
Qgs  
140  
52  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS  
Qgd  
32  
RthJC  
RthCS  
0.31 C/W  
C/W  
TO-220  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
260  
A
A
V
TO-220 Outline  
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
1000  
1.3  
A
E
oP  
A1  
H1  
Q
trr  
60  
3.4  
ns  
A
D2  
E1  
D
IF = 130A, VGS = 0V,  
IRM  
QRM  
D1  
-di/dt = 100A/s, VR = 27V  
102  
nC  
A2  
EJECTOR  
PIN  
L1  
L
3X b  
3X b2  
ee  
c
e1  
Notes: 1. Pulse test, t 300s; duty cycle, d  2%.  
1 - Gate  
2,4 - Drain  
3 - Source  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5mm or less from the package body.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXTA260N055T2  
IXTP260N055T2  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
350  
300  
250  
200  
150  
100  
50  
V
= 15V  
V
= 15V  
GS  
GS  
240  
200  
160  
120  
80  
10V  
9V  
10V  
9V  
8V  
7V  
8V  
7V  
6V  
6V  
5V  
40  
5V  
0
0
0.0  
-50  
-50  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
3.2  
3.6  
175  
175  
0.0  
0.0  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 130A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150oC  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 15V  
GS  
240  
200  
160  
120  
80  
V
= 10V  
GS  
10V  
9V  
8V  
7V  
I
= 260A  
D
I
= 130A  
D
6V  
40  
5V  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 130A Value vs.  
Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
140  
120  
100  
80  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
T = 175oC  
J
External Lead Current Limit  
V
= 10V  
15V  
GS  
60  
T = 25oC  
J
40  
20  
0
-25  
0
25  
50  
75  
100  
125  
150  
50  
100  
150  
200  
250  
300  
350  
ID - Amperes  
TC - Degrees Centigrade  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTA260N055T2  
IXTP260N055T2  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
200  
180  
160  
140  
120  
100  
80  
140  
120  
100  
80  
T
J
= - 40oC  
25oC  
150oC  
T
J
= 150oC  
25oC  
- 40oC  
60  
60  
40  
40  
20  
20  
0
0
3.0  
0.3  
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
1.4  
40  
0
0
1
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
220  
140  
100  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
360  
320  
280  
240  
200  
160  
120  
80  
10  
9
8
7
6
5
4
3
2
1
0
V
= 28V  
DS  
I
I
= 130A  
= 10mA  
D
G
T
J
= 150oC  
T
= 25oC  
J
40  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
20  
40  
60  
80  
100  
120  
QG - NanoCoulombs  
VSD - Volts  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
100,000  
10,000  
1,000  
100  
1,000  
100  
10  
R
Limit  
)
DS(  
on  
= 1 MHz  
f
25μs  
C
iss  
100μs  
External Lead Current Limit  
C
oss  
1ms  
TJ = 175oC  
TC = 25oC  
10ms  
C
rss  
100ms  
DC  
Single Pulse  
1
5
10  
15  
20  
25  
30  
35  
10  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTA260N055T2  
IXTP260N055T2  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
40  
36  
32  
28  
24  
20  
16  
12  
32  
31  
30  
29  
28  
27  
26  
25  
24  
R
= 2Ω , V = 10V  
GS  
G
R
= 2Ω , V = 10V  
GS  
G
V
= 28V  
DS  
V
= 28V  
DS  
T = 125oC  
J
I
= 200A  
D
I
= 100A  
D
T = 25oC  
J
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
40  
60  
80  
100  
120  
140  
160  
180  
200  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
160  
140  
120  
100  
80  
90  
55  
60  
t r  
td(on)  
80  
70  
60  
50  
40  
30  
20  
10  
50  
45  
40  
35  
30  
25  
20  
15  
t f  
td(off)  
55  
50  
45  
40  
35  
30  
25  
20  
TJ = 125oC, V = 10V  
GS  
R
G
= 2Ω, V = 10V  
GS  
V
= 28V  
DS  
V
= 28V  
DS  
I
= 200A, 100A  
D
I
= 200A, 100A  
D
60  
40  
20  
0
2
4
6
8
10  
12  
14  
16  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
44  
40  
36  
32  
28  
24  
20  
16  
12  
8
65  
275  
250  
225  
200  
175  
150  
125  
100  
75  
240  
220  
200  
180  
160  
140  
120  
100  
80  
t f  
td(off)  
t f  
td(off)  
60  
55  
50  
45  
40  
35  
30  
25  
20  
T = 125oC, VGS = 10V  
R
G
= 2Ω, VGS = 10V  
J
VDS = 28V  
VDS = 28V  
T = 125oC  
J
I
= 100A, 200A  
D
T = 25oC  
J
50  
60  
25  
40  
0
20  
2
4
6
8
10  
12  
14  
16  
40  
60  
80  
100  
120  
140  
160  
180  
200  
RG - Ohms  
ID - Amperes  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTA260N055T2  
IXTP260N055T2  
Fig. 19. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_260N055T2 (V6) 7-10-18-C  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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