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IXTL2N470

型号：

IXTL2N470

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

159 K

下载PDF手册
Advance Technical Information  
High Voltage  
Power MOSFET  
VDSS  
ID25  
= 4700V  
= 2A  
IXTL2N470  
RDS(on)  20  
(Electrically Isolated Tab)  
ISOPLUS i5-PakTM  
N-Channel Enhancement Mode  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
S
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
4700  
4700  
V
V
Isolated Tab  
VDGR  
D
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G = Gate  
D = Drain  
S = Source  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
2
8
A
A
PD  
TC = 25C  
220  
W
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
C  
C  
C  
Features  
Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Isolated Mounting Surface  
4000V~ RMS Electrical Isolation  
Molding Epoxies meet UL 94 V-0  
Flammability Classification  
FC  
Mounting Force  
20..120 / 4.5..27  
N/lb.  
V~  
g
VISOL  
Weight  
50/60Hz, 1 Minute  
4000  
8
Advantages  
Easy to Mount  
Space Savings  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ. Max.  
VGS(th)  
IGSS  
VDS = VGS, ID = 250A  
VGS = 20V, VDS = 0V  
3.5  
6.0  
V
Applications  
200 nA  
High Voltage Power Supplies  
Capacitor Discharge Applications  
Pulse Circuits  
IDSS  
VDS = 3.6kV, VGS = 0V  
VDS = 4.7kV  
VDS = 3.6kV  
10 A  
50 μA  
Laser and X-Ray Generation Systems  
Note 2, TJ = 125C  
250  
μA  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
20  
DS100759(11/16)  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXTL2N470  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 60V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
Integrated Gate Input Resistance  
2.1  
3.5  
S
Ciss  
Coss  
Crss  
6860  
267  
pF  
pF  
pF  
105  
RGi  
4.0  
  
td(on)  
tr  
td(off)  
tf  
40  
34  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 1kV, ID = 1A  
RG = 0(External)  
123  
205  
Qg(on)  
Qgs  
180  
34  
nC  
nC  
nC  
VGS = 10V, VDS = 1kV, ID = 0.5 • ID25  
Qgd  
83  
RthJC  
RthCS  
0.56 C/W  
C/W  
0.15  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
2
8
3
A
A
ISM  
VSD  
trr  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
V
IF = 2A, -di/dt = 100A/μs, VR = 100V  
1.75  
μs  
Notes: 1. Pulse test, t 300s, duty cycle, d 2%.  
2. Part must be heatsunk for high-temp Idss measurement.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTL2N470  
Fig. 2. Output Characteristics @ TJ = 125ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
= 10V  
GS  
V
= 10V  
GS  
6V  
7V  
6.5V  
5.5V  
5V  
6V  
0
10  
20  
30  
40  
50  
60  
70  
0
10  
20  
30  
40  
50  
60  
70  
VDS - Volts  
VDS - Volts  
Fig. 3. RDS(on) Normalized to ID = 1A Value  
vs. Junction Temperature  
Fig. 4. RDS(on) Normalized to ID = 1A Value  
vs. Drain Current  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
V
= 10V  
GS  
TJ = 125ºC  
I
= 2A  
D
I
= 1A  
D
T = 25ºC  
J
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
0.5  
1
1.5  
2
2.5  
3
ID - Amperes  
TJ - Degrees Centigrade  
Fig. 5. Maximum Drain Current vs. Case Temperature  
Fig. 6. Input Admittance  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
T
= 125ºC  
J
25ºC  
6.0  
- 40ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
4.0  
4.5  
5.0  
5.5  
6.5  
7.0  
TC - Degrees Centigrade  
VGS - Volts  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXTL2N470  
Fig. 7. Transconductance  
Fig. 8. Forward Voltage Drop of Intrinsic Diode  
6
5
4
3
2
1
0
6
5
4
3
2
1
0
T
J
= - 40ºC  
25ºC  
125ºC  
T
J
= 125ºC  
T
J
= 25ºC  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
40  
10  
ID - Amperes  
VSD - Volts  
Fig. 10. Capacitance  
Fig. 9. Gate Charge  
10,000  
1,000  
100  
10  
9
8
7
6
5
4
3
2
1
0
V
= 1000V  
DS  
C
iss  
I
I
= 1A  
D
G
= 10mA  
C
oss  
rss  
C
f = 1 MHz  
5
10  
0
10  
15  
20  
25  
30  
35  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
VDS - Volts  
QG - NanoCoulombs  
Fig. 12. Resistive Switching Times vs.  
External Gate Resistance  
Fig. 11. Forward-Bias Safe Operating Area  
300  
250  
200  
150  
100  
50  
10  
R
Limit  
)
DS(  
on  
V
= 1kV, V = 10V  
GS  
DS  
25µs  
I
D
= 1A, T = 25ºC  
J
100µs  
1
t f  
1ms  
10ms  
t r  
t d(off)  
0.1  
0.01  
T = 150ºC  
J
100ms  
1s  
t d(on)  
T
C
= 25ºC  
Single Pulse  
DC  
0
100  
1,000  
10,000  
0
1
2
3
4
5
6
7
8
9
VDS - Volts  
RG(ext) - Ohms  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTL2N470  
Fig. 13. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
Pulse Width - Seconds  
ISOPLUS i5-PakTM (IXTL) Outline  
A
S
E
Q
A2  
U
R
T
Q1  
D
R1  
4
1
2
3
L1  
1 = Gate  
2 = Source  
3 = Drain  
4 = Isolated  
L
c
b1  
b2  
e1  
e
© 2016 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_2N470(H9-P640) 11-01-16  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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