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IXTY2N65X2

型号：

IXTY2N65X2

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

214 K

下载PDF手册
Preliminary Technical Information  
X2-Class  
Power MOSFET  
VDSS = 650V  
ID25 = 2A  
RDS(on) 2.3  
IXTY2N65X2  
IXTP2N65X2  
N-Channel Enhancement Mode  
TO-252 (IXTY)  
G
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
D (Tab)  
TJ = 25C to 150C  
650  
650  
V
V
VDGR  
TJ = 25C to 150C, RGS = 1M  
TO-220 (IXTP)  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
2
4
A
A
G
D
S
D (Tab)  
IA  
TC = 25C  
TC = 25C  
1
A
EAS  
100  
mJ  
G = Gate  
D
= Drain  
S = Source  
Tab = Drain  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
50  
55  
V/ns  
W
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
Features  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
International Standard Packages  
Low QG  
Avalanche Rated  
Md  
Mounting Torque (TO-220)  
1.13 / 10  
Nm/lb.in  
Low Package Inductance  
Weight  
TO-252  
TO-220  
0.35  
3.00  
g
g
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
650  
V
V
3.0  
5.0  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
100 nA  
A  
IDSS  
5
TJ = 125C  
100 A  
Robotics and Servo Controls  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
2.3  
DS100654B(5/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXTY2N65X2  
IXTP2N65X2  
Symbol  
Test Conditions  
Characteristic Values  
TO-252 AA Outline  
A
E
b3  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
c2  
L3  
4
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
Gate Input Resistance  
1.1  
1.8  
S
A1  
A2  
H
RGi  
14  
L4  
1
2
3
L1  
b2  
L
c
Ciss  
Coss  
Crss  
180  
129  
0.7  
pF  
pF  
pF  
1 - Gate  
2,4 - Drain  
3 - Source  
e
e1  
L2  
e1  
VGS = 0V, VDS = 25V, f = 1MHz  
0
5.55MIN  
OPTIONAL  
6.50MIN  
Effective Output Capacitance  
4
Co(er)  
Co(tr)  
22  
45  
pF  
pF  
6.40  
2.28  
Energy related  
Time related  
VGS = 0V  
VDS = 0.8 • VDSS  
2.85MIN  
1.25MIN  
BOTTOM  
VIEW  
LAND PATTERN RECOMMENDATION  
td(on)  
tr  
td(off)  
tf  
15  
19  
20  
14  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
V
RG = 50(External)  
Qg(on)  
Qgs  
4.3  
0.8  
2.1  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
2.27 C/W  
C/W  
TO-220  
0.50  
TO-220 Outline  
Source-Drain Diode  
A
E
oP  
A1  
Symbol  
Test Conditions  
Characteristic Values  
H1  
Q
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
D2  
E1  
D
D1  
IS  
VGS = 0V  
2
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
8
A2  
EJECTOR  
PIN  
L1  
L
1.4  
V
trr  
QRM  
IRM  
137  
508  
7.4  
ns  
e
c
3X b  
3X b2  
IF = 1A, -di/dt = 100A/μs  
e1  
nC  
1 - Gate  
2,4 - Drain  
3 - Source  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXTY2N65X2  
IXTP2N65X2  
Fig. 1. Output Characteristics @ TJ = 25oC  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
2.0  
1.5  
1.0  
0.5  
0.0  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
= 10V  
V
= 10V  
8V  
GS  
GS  
8V  
7V  
7V  
6V  
6V  
5.5V  
5V  
5.5V  
5V  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
0
4
8
12  
16  
20  
24  
28  
32  
150  
150  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 1A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
2.0  
1.5  
1.0  
0.5  
0.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
= 10V  
7V  
GS  
V
= 10V  
GS  
6V  
I
= 2A  
D
I
= 1A  
D
5V  
4V  
-50  
-25  
0
25  
50  
75  
100  
125  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 1A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
V
= 10V  
GS  
T
J
= 125oC  
T
J
= 25oC  
-50  
-25  
0
25  
50  
75  
100  
125  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
TC - Degrees Centigrade  
ID - Amperes  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXTY2N65X2  
IXTP2N65X2  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
T
J
= - 40oC  
25oC  
T
J
= 125oC  
25oC  
- 40oC  
125oC  
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
3.0  
0.4  
1
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
6
5
4
3
2
1
0
10  
8
V
= 325V  
DS  
I
I
= 1A  
D
G
= 1mA  
6
T
J
= 125oC  
4
T
J
= 25oC  
2
0
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
QG - NanoCoulombs  
VSD - Volts  
Fig. 11. Capacitance  
Fig. 12. Output Capacitance Stored Energy  
1,000  
100  
10  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
C
C
iss  
oss  
C
rss  
1
= 1 MHz  
f
0
10  
100  
1000  
0
100  
200  
300  
400  
500  
600  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTY2N65X2  
IXTP2N65X2  
Fig. 13. Forward-Bias Safe Operating Area  
Fig. 14. Maximum Transient Thermal Impedance  
10  
10  
R
DS(  
on  
Limit  
)
25μs  
1
1
100μs  
0.1  
0.01  
0.1  
0.01  
T = 150oC  
J
T
C
= 25oC  
1ms  
10ms  
Single Pulse  
DC  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1,000  
VDS - Volts  
Pulse Width - Second  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_2N65X2(Z1-R25T50) 6-05-15-A  
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