IC25 = 32 A
VCES = 2500 V
VCE(sat)= 3.9 V
High Voltage IGBT
IXLV 19N250AS
PLUS220SMD
G
IGBT
C (TAB)
E
Symbol
VCES
Conditions
Maximum Ratings
G = Gate,
C = Collector,
E=Emitter,
TAB = Collector
TVJ = 25°C to 150°C
2500
V
VGES
VGEM
20
30
V
V
Features
z High Voltage IGBT
IC25
IC90
TC = 25°C
TC = 90°C
32
19
A
A
- substitute for high voltage MOSFETs
with significantly lower voltage drop
and comparable switching speed
- substitute for high voltage thyristors
with voltage control of turn on and
turn off
ICM
VCEK
VGE = 15 V; RG = 47 Ω; TVJ = 125°C
RBSOA, Clamped inductive load; L = 100 µH
70
1200
A
V
Ptot
TC = 25°C
250
W
- substitute for electromechanical
trigger and discharge relays
z SMD package for large chips
z Large creep distance between
terminals
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
VCE(sat)
IC = 19 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
2.8
4.0
3.9
V
V
Applications
VGE(th)
ICES
IC = 1 mA; VGE = VCE
5
8
V
z Switched mode power supplies
z DC-DC converters
VCE = VCES;VGE = 0 V; TVJ = 25°C
TVJ = 125°C
0.15 mA
mA
0.2
z Resonant converters
z Laser generators, x ray generators
z Discharge circuits
IGES
VCE = 0 V; VGE
=
20 V
500 nA
td(on)
tr
td(off)
tf
Eon
Eoff
90
50
ns
ns
Inductive load, TVJ = 125°C
VCE = 1500 V; IC = 19 A
580
250
16
ns
ns
mJ
mJ
±
VGE = 15 V; RG = 47 Ω
32
Cies
Coes
Cres
2.2
277
122
nF
pF
pF
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 800V; VGE = 15 V; IC = 19 A
QGon
RthJC
130
nC
0.5 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
DS99104A(09/04)
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