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IXTP3N100D2

型号：

IXTP3N100D2

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

156 K

下载PDF手册
VDSX = 1000V  
ID(on) > 3A  
Depletion Mode  
MOSFET  
IXTA3N100D2  
IXTP3N100D2  
RDS(on) 6  
D
N-Channel  
G
TO-263 AA (IXTA)  
S
G
S
Symbol  
VDSX  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
1000  
V
D (Tab)  
VGSX  
VGSM  
Continuous  
Transient  
20  
30  
V
V
TO-220AB (IXTP)  
PD  
TC = 25C  
125  
W
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
C  
C  
C  
G
D
D (Tab)  
= Drain  
S
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
G = Gate  
S = Source  
D
Md  
Mounting Torque (TO-220)  
1.13 / 10  
Nm/lb.in.  
Tab = Drain  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
Features  
• Normally ON Mode  
•International Standard Packages  
• Molding Epoxies Meet UL94V-0  
Flammability Classification  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
• Easy to Mount  
• Space Savings  
• High Power Density  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
1000  
- 2.5  
Typ.  
Max.  
BVDSX  
VGS(off)  
IGSX  
VGS = - 5V, ID = 250A  
VDS = 25V, ID = 250A  
VGS = 20V, VDS = 0V  
VDS = VDSX, VGS = - 5V  
V
V
- 4.5  
Applications  
100 nA  
A  
50 A  
IDSX(off)  
5
• Audio Amplifiers  
• Start-Up Circuits  
• Protection Circuits  
• Ramp Generators  
• Current Regulators  
• Active Loads  
TJ = 125C  
RDS(on)  
ID(on)  
VGS = 0V, ID = 1.5A, Note 1  
VGS = 0V, VDS = 50V, Note 1  
6
3
A
DS100184E(4/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXTA3N100D2  
IXTP3N100D2  
Symbol  
Test Conditions  
Characteristic Values  
TO-263 Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 30V, ID = 1.5A, Note 1  
1.2  
2.0  
S
Ciss  
Coss  
Crss  
1020  
68  
pF  
pF  
pF  
VGS = -10V, VDS = 25V, f = 1MHz  
17  
td(on)  
tr  
td(off)  
tf  
27  
67  
34  
40  
ns  
ns  
ns  
ns  
Resistive Switching Times  
1. Gate  
2. Drain  
3. Source  
4. Drain  
Bottom  
Side  
V
GS = 5V, VDS = 500V, ID = 1.5A  
RG = 3.3(External)  
Qg(on)  
Qgs  
37.5  
4.4  
nC  
nC  
nC  
Dim.  
Millimeter  
Inches  
Min. Max.  
VGS = 5V, VDS = 500V, ID = 1.5A  
Min.  
Max.  
A
b
b2  
4.06  
0.51  
1.14  
4.83  
0.99  
1.40  
.160  
.020  
.045  
.190  
.039  
.055  
Qgd  
21.2  
RthJC  
RthCS  
1.0 C/W  
C/W  
c
c2  
0.40  
1.14  
0.74  
1.40  
.016  
.045  
.029  
.055  
TO-220  
0.50  
D
D1  
8.64  
8.00  
9.65  
8.89  
.340  
.280  
.380  
.320  
E
9.65  
10.41  
.380  
.405  
E1  
e
L
L1  
L2  
L3  
L4  
6.22  
2.54  
14.61  
2.29  
1.02  
1.27  
0
8.13  
BSC  
15.88  
2.79  
1.40  
1.78  
0.13  
.270  
.100 BSC  
.320  
Safe-Operating-Area Specification  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.005  
Characteristic Values  
Symbol  
SOA  
Test Conditions  
Min.  
Typ.  
Max.  
VDS = 800V, ID = 94mA, TC = 75C, Tp = 5s  
75  
W
TO-220 Outline  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VSD  
IF = 3A, VGS = -10V, Note 1  
0.8  
1.3  
V
trr  
IRM  
QRM  
970  
12.7  
6.16  
ns  
A
μC  
IF = 3A, -di/dt = 100A/s  
VR = 100V, VGS = -10V  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTA3N100D2  
IXTP3N100D2  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
7
6
5
4
3
2
1
0
V
= 5V  
GS  
V
= 5V  
GS  
2V  
1V  
2V  
1V  
0V  
0V  
-1V  
-1V  
- 2V  
- 2V  
- 3V  
0
2
4
6
8
10  
12  
14  
0
10  
20  
30  
40  
50  
VDS - Volts  
VDS - Volts  
Fig. 3. Output Characteristics @ TJ = 125oC  
Fig. 4. Drain Current @ TJ = 25oC  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
1.E+00  
1.E-01  
1.E-02  
1.E-03  
1.E-04  
1.E-05  
1.E-06  
1.E-07  
V
= - 3.00V  
GS  
V
= 5V  
GS  
1V  
0V  
- 3.25V  
- 3.50V  
-1V  
- 3.75V  
- 4.00V  
- 2V  
- 3V  
- 4.25V  
- 4.50V  
0
5
10  
15  
20  
25  
30  
0
100 200 300 400 500 600 700 800 900 1000 1100 1200  
VDS - Volts  
VDS - Volts  
Fig. 5. Drain Current @ TJ = 100oC  
Fig. 6. Dynamic Resistance vs. Gate Voltage  
1.E+10  
1.E+09  
1.E+08  
1.E+07  
1.E+06  
1.E+05  
1.E+04  
1.E+00  
1.E-01  
1.E-02  
1.E-03  
1.E-04  
1.E-05  
V
= 700V - 100V  
∆
DS  
VGS = - 3.25V  
- 3.50V  
- 3.75V  
- 4.00V  
T = 25oC  
J
- 4.25V  
- 4.50V  
T = 100oC  
J
0
100 200 300 400 500 600 700 800 900 1000 1100 1200  
VDS - Volts  
-4.6  
-4.4  
-4.2  
-4.0  
-3.8  
-3.6  
-3.4  
-3.2  
-3.0  
-2.8  
VGS - Volts  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXTA3N100D2  
IXTP3N100D2  
Fig. 8. RDS(on) Normalized to ID = 1.5A Value  
vs. Drain Current  
Fig. 7. Normalized RDS(on) vs. Junction Temperature  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
V
= 0V  
GS  
V
= 0V  
5V  
GS  
I
= 1.5A  
D
T = 125oC  
J
T = 25oC  
J
-50  
-4.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 9. Input Admittance  
Fig. 10. Transconductance  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
= 30V  
DS  
V
= 30V  
DS  
T
= - 40oC  
J
25oC  
125oC  
T
J
= 125oC  
25oC  
- 40oC  
-3.5  
-3.0  
-2.5  
-2.0  
-1.5  
-1.0  
-0.5  
0.0  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
VGS - Volts  
ID - Amperes  
Fig. 11. Breakdown and Threshold Voltages  
vs. Junction Temperature  
Fig. 12. Forward Voltage Drop of Intrinsic Diode  
10  
9
8
7
6
5
4
3
2
1
0
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
V
= -10V  
GS  
VGS(off) @ V = 25V  
DS  
BVDSX@ V = - 5V  
GS  
T
J
= 125oC  
T
J
= 25oC  
-25  
0
25  
50  
75  
100  
125  
150  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
TJ - Degrees Centigrade  
VSD - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTA3N100D2  
IXTP3N100D2  
Fig. 13. Capacitance  
Fig. 14. Gate Charge  
10,000  
1,000  
100  
5
4
= 1 MHz  
f
V
= 500V  
DS  
I
I
= 1.5A  
D
G
3
= 10mA  
C
iss  
2
1
0
-1  
-2  
-3  
-4  
-5  
C
C
oss  
rss  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
0
5
10  
15  
20  
25  
30  
35  
40  
VDS - Volts  
QG - NanoCoulombs  
Fig. 16. Forward-Bias Safe Operating Area  
@ TC = 75oC  
Fig. 15. Forward-Bias Safe Operating Area  
@ TC = 25oC  
10.00  
1.00  
0.10  
10  
R
Limit  
R
Limit  
DS(on)  
DS(on)  
25μs  
25μs  
100μs  
100μs  
1
1ms  
1ms  
10ms  
10ms  
100ms  
DC  
0.1  
100ms  
DC  
= 150oC  
= 25oC  
T
= 150oC  
= 75oC  
J
T
J
T
C
T
C
Single Pulse  
Single Pulse  
0.01  
0.01
10  
100  
1,000  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
Fig. 17. Maximum Transient Thermal Impedance  
.
2.00  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_3N100D2(3C) 7-15-14-B  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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