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IXTA3N100D2HV

型号：

IXTA3N100D2HV

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

182 K

下载PDF手册
Preliminary Technical Information  
High Voltage  
Depletion Mode  
MOSFET  
VDSX = 1000V  
ID(on) > 3A  
IXTA3N100D2HV  
RDS(on) 6  
D
N-Channel  
G
TO-263HV  
S
G
S
D (Tab)  
Symbol  
VDSX  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
1000  
V
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
VGSX  
VGSM  
Continuous  
Transient  
20  
30  
V
V
PD  
TC = 25C  
125  
W
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
C  
C  
C  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
• High Blocking Voltage  
• Normally ON Mode  
•High Voltage package  
Md  
Mounting Force  
10..65 / 2.2..14.6  
2.5  
N/lb  
g
Weight  
Advantages  
• Easy to Mount  
• Space Savings  
• High Power Density  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
1000  
- 2.5  
Typ.  
Max.  
• Audio Amplifiers  
• Start-Up Circuits  
• Protection Circuits  
• Ramp Generators  
• Current Regulators  
• Active Loads  
BVDSX  
VGS(off)  
IGSX  
VGS = - 5V, ID = 250A  
VDS = 25V, ID = 250A  
VGS = 20V, VDS = 0V  
VDS = VDSX, VGS = - 5V  
V
V
- 4.5  
100 nA  
A  
50 A  
IDSX(off)  
5
TJ = 125C  
RDS(on)  
ID(on)  
VGS = 0V, ID = 1.5A, Note 1  
VGS = 0V, VDS = 50V, Note 1  
6
3
A
DS100507B(4/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXTA3N100D2HV  
Symbol  
Test Conditions  
Characteristic Values  
TO-263HV Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 30V, ID = 1.5A, Note 1  
1.2  
2.0  
S
Ciss  
Coss  
Crss  
1020  
68  
pF  
pF  
pF  
VGS = -10V, VDS = 25V, f = 1MHz  
17  
td(on)  
tr  
td(off)  
tf  
27  
67  
34  
40  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 5V, VDS = 500V, ID = 1.5A  
RG = 3.3(External)  
PIN: 1 - Gate  
2 - Source  
3 - Drain  
Qg(on)  
Qgs  
37.5  
4.4  
nC  
nC  
nC  
VGS = 5V, VDS = 500V, ID = 1.5A  
Qgd  
21.2  
RthJC  
1.0 C/W  
Safe-Operating-Area Specification  
Characteristic Values  
Symbol  
SOA  
Test Conditions  
Min.  
Typ.  
Max.  
VDS = 800V, ID = 94mA, TC = 75C, Tp = 5s  
75  
W
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VSD  
IF = 3A, VGS = -10V, Note 1  
0.8  
1.3  
V
trr  
IRM  
QRM  
970  
12.7  
6.16  
ns  
A
μC  
IF = 3A, -di/dt = 100A/s  
VR = 100V, VGS = -10V  
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
PRELIMANARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTA3N100D2HV  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
7
6
5
4
3
2
1
0
V
= 5V  
GS  
V
= 5V  
GS  
2V  
1V  
2V  
1V  
0V  
0V  
-1V  
-1V  
- 2V  
- 2V  
- 3V  
0
2
4
6
8
10  
12  
14  
0
10  
20  
30  
40  
50  
VDS - Volts  
VDS - Volts  
Fig. 3. Output Characteristics @ TJ = 125oC  
Fig. 4. Drain Current @ TJ = 25oC  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
1.E+00  
1.E-01  
1.E-02  
1.E-03  
1.E-04  
1.E-05  
1.E-06  
1.E-07  
V
= - 3.00V  
GS  
V
= 5V  
GS  
1V  
0V  
- 3.25V  
- 3.50V  
-1V  
- 3.75V  
- 4.00V  
- 2V  
- 3V  
- 4.25V  
- 4.50V  
0
5
10  
15  
20  
25  
30  
0
100 200 300 400 500 600 700 800 900 1000 1100 1200  
VDS - Volts  
VDS - Volts  
Fig. 5. Drain Current @ TJ = 100oC  
Fig. 6. Dynamic Resistance vs. Gate Voltage  
1.E+10  
1.E+09  
1.E+08  
1.E+07  
1.E+06  
1.E+05  
1.E+04  
1.E+00  
1.E-01  
1.E-02  
1.E-03  
1.E-04  
1.E-05  
V
= 700V - 100V  
∆
DS  
VGS = - 3.25V  
- 3.50V  
- 3.75V  
- 4.00V  
T
J
= 25oC  
- 4.25V  
- 4.50V  
T
J
= 100oC  
0
100 200 300 400 500 600 700 800 900 1000 1100 1200  
VDS - Volts  
-4.6  
-4.4  
-4.2  
-4.0  
-3.8  
-3.6  
-3.4  
-3.2  
-3.0  
-2.8  
VGS - Volts  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXTA3N100D2HV  
Fig. 8. RDS(on) Normalized to ID = 1.5A Value  
vs. Drain Current  
Fig. 7. Normalized RDS(on) vs. Junction Temperature  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
V
= 0V  
GS  
V
= 0V  
5V  
GS  
I
= 1.5A  
D
T
J
= 125oC  
T
J
= 25oC  
-50  
-4.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 9. Input Admittance  
Fig. 10. Transconductance  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
= 30V  
DS  
V
= 30V  
DS  
T
= - 40oC  
J
25oC  
125oC  
T
J
= 125oC  
25oC  
- 40oC  
-3.5  
-3.0  
-2.5  
-2.0  
-1.5  
-1.0  
-0.5  
0.0  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
VGS - Volts  
ID - Amperes  
Fig. 11. Breakdown and Threshold Voltages  
vs. Junction Temperature  
Fig. 12. Forward Voltage Drop of Intrinsic Diode  
10  
9
8
7
6
5
4
3
2
1
0
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
V
= -10V  
GS  
VGS(off) @ V = 25V  
DS  
BVDSX@ V = - 5V  
GS  
T
J
= 125oC  
T
J
= 25oC  
-25  
0
25  
50  
75  
100  
125  
150  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
TJ - Degrees Centigrade  
VSD - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTA3N100D2HV  
Fig. 13. Capacitance  
Fig. 14. Gate Charge  
10,000  
1,000  
100  
5
4
= 1 MHz  
f
V
= 500V  
DS  
I
I
= 1.5A  
D
G
3
= 10mA  
C
iss  
2
1
0
-1  
-2  
-3  
-4  
-5  
C
C
oss  
rss  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
0
5
10  
15  
20  
25  
30  
35  
40  
VDS - Volts  
QG - NanoCoulombs  
Fig. 16. Forward-Bias Safe Operating Area  
@ TC = 75oC  
Fig. 15. Forward-Bias Safe Operating Area  
@ TC = 25oC  
10.00  
1.00  
0.10  
10  
R
Limit  
R
Limit  
DS(on)  
DS(on)  
25μs  
25μs  
100μs  
100μs  
1
1ms  
1ms  
10ms  
10ms  
100ms  
DC  
0.1  
100ms  
DC  
= 150oC  
= 25oC  
T
= 150oC  
= 75oC  
J
T
J
T
C
T
C
Single Pulse  
Single Pulse  
0.01  
0.01
10  
100  
1,000  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
Fig. 17. Maximum Transient Thermal Impedance  
.
2.00  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_3N100D2(3C) 7-15-14-B  
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