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IXTZ550N055T2

型号：

IXTZ550N055T2

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

7 页

PDF大小：

206 K

下载PDF手册
Advance Technical Information  
TrenchT2TM GigaMOSTM  
Power MOSFET  
VDSS = 55V  
ID25 = 550A  
RDS(on) ≤ 1.0mΩ  
IXTZ550N055T2  
(Electrically Isolated Tab)  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
DE475  
D
D
D
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
55  
55  
V
V
G
VDGR  
S
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
S
Isolated Tab  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
550  
A
A
G = Gate  
S = Source  
D = Drain  
1650  
IA  
TC = 25°C  
TC = 25°C  
200  
3
A
J
EAS  
Features  
PD  
TC = 25°C  
600  
W
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
z Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
z Isolated Substrate  
VISOL  
50/60 Hz, RMS  
IISOL ≤ 1mA  
t = 1 minute  
t = 1 second  
2500  
3000  
V~  
V~  
- Excellent Thermal Transfer  
- Increased Temperature and Power  
Cycling Capability  
- High Isolation Voltage (2500V~)  
z 175°C Operating Temperature  
z Very High Current Handling  
Capability  
z Fast Intrinsic Diode  
z Avalanche Rated  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
VISOL  
50/60 Hz, 1 Minute  
Mounting Force  
2500  
V~  
FC  
20..120 / 4.5..27  
3
N/lb.  
g
Weight  
z
Very Low RDS(on)  
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ±20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
55  
V
V
Applications  
2.0  
4.0  
z DC-DC Converters and Off-Line UPS  
z Primary-Side Switch  
z High Speed Power Switching  
Applications  
±200 nA  
IDSS  
10 μA  
1.5 mA  
TJ = 150°C  
RDS(on)  
VGS = 10V, ID = 100A, Note 1  
1.0 mΩ  
DS100243(02/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXTZ550N055T2  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 60A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
95  
160  
S
Ciss  
Coss  
Crss  
40  
4970  
1020  
nF  
pF  
pF  
RGI  
td(on)  
tr  
Gate Input Resistance  
1.36  
45  
Ω
ns  
ns  
ns  
ns  
Resistive Switching Times  
40  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 200A  
td(off)  
tf  
90  
RG = 1Ω (External)  
230  
Qg(on)  
Qgs  
595  
150  
163  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS  
Qgd  
RthJC  
RthCS  
0.25 °C/W  
°C/W  
0.15  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
IS  
VGS = 0V  
550  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
1700  
1.2  
trr  
IRM  
100  
5
ns  
A
IF = 100A, VGS = 0V  
-di/dt = 100A/μs  
VR = 27.5V  
QRM  
250  
nC  
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTZ550N055T2  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
300  
250  
200  
150  
100  
50  
350  
300  
250  
200  
150  
100  
50  
VGS = 15V  
VGS = 15V  
10V  
9V  
8V  
7V  
10V  
8V  
7V  
6V  
6V  
5V  
5V  
4V  
4V  
0
0
0.00  
0.05  
0.10  
0.15  
VDS - Volts  
0.20  
0.25  
0.30  
0.0  
-50  
-50  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
175  
175  
VDS - Volts  
Fig. 4. Normalized RDS(on) vs. Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
300  
250  
200  
150  
100  
50  
VGS = 15V  
VGS = 10V  
10V  
8V  
7V  
I
< 550A  
D
6V  
5V  
4V  
0
-25  
0
25  
50  
75  
100  
125  
150  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 6. Drain Current vs. Case Temperature  
Fig. 5. Normalized RDS(on) vs. Drain Current  
600  
500  
400  
300  
200  
100  
0
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGS = 10V  
15V  
TJ = 175ºC  
TJ = 25ºC  
-25  
0
25  
50  
75  
100  
125  
150  
0
50  
100  
150  
200  
250  
300  
ID - Amperes  
TC - Degrees Centigrade  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXTZ550N055T2  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
220  
200  
180  
160  
140  
120  
100  
80  
250  
200  
150  
100  
50  
TJ = - 40ºC  
25ºC  
150ºC  
TJ = 150ºC  
25ºC  
- 40ºC  
60  
40  
20  
0
0
2.5  
0.2  
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
1.0  
40  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
220  
VGS - Volts  
ID - Amperes  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
300  
250  
200  
150  
100  
50  
10  
9
8
7
6
5
4
3
2
1
0
VDS = 27.5V  
I
I
D = 275A  
G = 10mA  
TJ = 150ºC  
TJ = 25ºC  
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
0
100  
200  
300  
400  
500  
600  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
100  
10  
1
10,000  
1,000  
100  
10  
R
Limit  
DS(on)  
C
iss  
25µs  
100µs  
C
C
oss  
1ms  
10ms  
rss  
T
= 175ºC  
= 25ºC  
J
T
C
100ms  
DC  
= 1 MHz  
5
f
Single Pulse  
1
0.1  
0
1
10  
100  
10  
15  
20  
25  
30  
35  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTZ550N055T2  
Fig. 14. Resistive Turn-on Rise Time  
Fig. 13. Resistive Turn-on Rise Time  
vs. Junction Temperature  
vs. Drain Current  
48  
46  
44  
42  
40  
38  
36  
34  
32  
48  
46  
44  
42  
40  
38  
36  
34  
32  
RG = 1ꢀ , VGS = 10V  
VDS = 27.5V  
RG = 1Ω , VGS = 10V  
VDS = 27.5V  
TJ = 125ºC  
I D = 200A  
TJ = 25ºC  
I D = 100A  
40  
60  
80  
100  
120  
140  
160  
180  
200  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on Switching Times  
vs. Gate Resistance  
Fig. 16. Resistive Turn-off Switching Times  
vs. Junction Temperature  
400  
350  
300  
250  
200  
150  
100  
50  
120  
350  
300  
250  
200  
150  
100  
50  
150  
tf  
t
d(off) - - - -  
RG = 1Ω, VGS = 10V  
DS = 27.5V  
t r  
t
d(on) - - - -  
TJ = 125ºC, VGS = 10V  
DS = 27.5V  
105  
90  
75  
60  
45  
30  
15  
0
140  
130  
120  
110  
100  
90  
V
V
I D = 200A  
I D = 200A  
I D = 100A  
I D = 100A  
0
80  
0
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 18. Resistive Turn-off Switching Times  
vs. Gate Resistance  
Fig. 17. Resistive Turn-off Switching Times  
vs. Drain Current  
500  
400  
300  
200  
100  
0
500  
400  
300  
200  
100  
0
350  
300  
250  
200  
150  
100  
50  
180  
160  
140  
120  
100  
80  
t f  
t
d(off) - - - -  
TJ = 125ºC, VGS = 10V  
DS = 27.5V  
tf  
t
d(off) - - - -  
RG = 1ꢀ, VGS = 10V  
DS = 27.5V  
V
V
I D = 200A, 100A  
TJ = 125ºC  
TJ = 25ºC  
TJ = 125ºC  
60  
0
40  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
40  
60  
80  
100  
120  
ID - Amperes  
140  
160  
180  
200  
RG - Ohms  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXTZ550N055T2  
Fig. 19. Maximum Transient Thermal Impedance  
1.000  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
DE475 (IXTZ) Outline  
G
G
S
S
D
D
D
D
D
D
S
S
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: TZ550N055T2 (V9)2-24-10  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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