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IXTP160N04T2

型号：

IXTP160N04T2

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

205 K

下载PDF手册
Preliminary Technical Information  
TrenchT2TM  
Power MOSFET  
IXTA160N04T2  
IXTP160N04T2  
VDSS = 40V  
ID25 = 160A  
RDS(on) ≤ 5mΩ  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 (IXTA)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
S
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
40  
40  
V
V
VDGR  
(TAB)  
VGSM  
Transient  
± 20  
V
TO-220 (IXTP)  
ID25  
ILRMS  
IDM  
TC = 25°C  
Lead Current Limit, RMS  
TC = 25°C, pulse width limited by TJM  
160  
75  
A
A
A
400  
IA  
TC = 25°C  
TC = 25°C  
TC = 25°C  
80  
600  
250  
A
mJ  
W
G
D
(TAB)  
S
EAS  
PD  
G = Gate  
S = Source  
D
= Drain  
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
TAB = Drain  
TJM  
Tstg  
-55 ... +175  
Features  
TL  
Tsold  
1.6mm (0.062in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
z International standard packages  
z 175°C Operating Temperature  
z Avalanche rated  
Md  
Mounting torque (TO-220)  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
z High current handling capability  
z
Low RDS(on)  
Advantages  
z
Easy to mount  
Space savings  
High power density  
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ± 20V, VDS = 0V  
40  
V
V
2.0  
4.0  
Applications  
±200 nA  
μA  
• Synchronous Buck Converters  
• High Current Switching Power  
Supplies  
IDSS  
VDS = VDSS  
VGS = 0V  
5
TJ = 150°C  
150 μA  
5 mΩ  
• Battery Powered Electric Motors  
RDS(on)  
VGS = 10V, ID = 50A, Notes 1, 2  
• Resonant-mode power supplies  
• Electronics Ballast Application  
• Class D Audio Amplifiers  
DS100052(10/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXTA160N04T2  
IXTP160N04T2  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
TO-263 (IXTA) Outline  
(TJ = 25°C, unless otherwise specified)  
gfs  
VDS = 10V, ID = 60A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
38  
62  
S
Ciss  
Coss  
Crss  
4640  
820  
pF  
pF  
pF  
145  
td(on)  
tr  
td(off)  
tf  
10  
27  
19  
16  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 5Ω (External)  
Qg(on)  
Qgs  
79  
19  
20  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCH  
0.60 °C/W  
°C/W  
TO-220  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
160  
640  
1.3  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, Pulse width limited by TJM  
IF = 80A, VGS = 0V, Note 1  
TO-220 (IXTP) Outline  
trr  
40  
1.8  
35  
ns  
A
IF = 80A, VGS = 0V  
IRM  
QRM  
-di/dt = 100A/μs  
VR = 20V  
nC  
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5mm or less from the package body.  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
4 - Drain  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTA160N04T2  
IXTP160N04T2  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
300  
250  
200  
150  
100  
50  
160  
140  
120  
100  
80  
VGS = 15V  
VGS = 15V  
10V  
9V  
10V  
9V  
8V  
8V  
7V  
7V  
6V  
5V  
60  
40  
6V  
5V  
20  
0
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
175  
175  
0.0  
0.0  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.4  
320  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 80A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
160  
140  
120  
100  
80  
VGS = 15V  
VGS = 10V  
10V  
9V  
8V  
I D = 160A  
7V  
6V  
I D = 80A  
60  
40  
5V  
20  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 80A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
80  
70  
60  
50  
40  
30  
20  
10  
0
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGS = 10V  
External Lead Current Limit  
15V - - - - -  
TJ = 175ºC  
TJ = 25ºC  
280  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
40  
80  
120  
160  
200  
240  
ID - Amperes  
TC - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXTA160N04T2  
IXTP160N04T2  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
140  
120  
100  
80  
TJ = - 40ºC  
25ºC  
150ºC  
TJ = 150ºC  
25ºC  
- 40ºC  
60  
40  
20  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
300  
250  
200  
150  
100  
50  
VDS = 20V  
I D = 80A  
I
G = 10mA  
TJ = 150ºC  
TJ = 25ºC  
0
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6  
VSD - Volts  
0
10  
20  
30  
40  
50  
60  
70  
80  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
10,000  
1,000  
100  
1000  
100  
10  
= 1MHz  
f
R
Limit  
DS(on)  
C
iss  
25µs  
100µs  
Lead Limit  
1ms  
C
oss  
10ms  
100ms  
T
T
= 175ºC  
= 25ºC  
J
DC  
C
rss  
C
Single Pulse  
1
0
5
10  
15  
20  
25  
30  
35  
40  
1
10  
VDS - Volts  
100  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: T_160N04T2(V4)10-31-08-B  
IXTA160N04T2  
IXTP160N04T2  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
29  
28  
27  
26  
25  
24  
23  
22  
21  
RG = 5ꢀ  
TJ = 25ºC  
VGS = 10V  
VDS = 20V  
RG = 5Ω  
VGS = 10V  
DS = 20V  
I D = 160A  
V
I D = 80A  
TJ = 125ºC  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
80  
90  
100  
110  
120  
130  
140  
150  
160  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
34  
34  
140  
120  
100  
80  
35  
30  
25  
20  
15  
10  
5
t r  
t
d(on) - - - -  
t f  
t
d(off) - - - -  
30  
26  
22  
18  
14  
10  
30  
26  
22  
18  
14  
10  
TJ = 125ºC, VGS = 10V  
DS = 20V  
RG = 5ꢀ, VGS = 10V  
VDS = 20V  
I D = 80A  
V
I D = 160A, 80A  
I D = 160A  
60  
40  
20  
0
0
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
4
6
8
10  
12  
14  
16  
18  
20  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
140  
120  
100  
80  
140  
120  
100  
80  
40  
35  
30  
25  
20  
15  
10  
40  
tf  
t
d(off) - - - -  
t f  
t
d(off) - - - -  
TJ = 125ºC, VGS = 10V  
VDS = 20V  
35  
30  
25  
20  
15  
10  
RG = 5ꢀ, VGS = 10V  
DS = 20V  
V
TJ = 125ºC  
I D = 80A, 160A  
60  
60  
40  
40  
TJ = 25ºC  
20  
20  
0
0
4
6
8
10  
12  
14  
16  
18  
20  
80  
90  
100  
110  
120  
130  
140  
150  
160  
RG - Ohms  
ID - Amperes  
© 2008 IXYS CORPORATION, All rights reserved  
IXTA160N04T2  
IXTP160N04T2  
Fig. 19. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: T_160N04T2(V4)10-31-08-B  
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