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IXTH420N04T2

型号：

IXTH420N04T2

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

7 页

PDF大小：

164 K

下载PDF手册
Advance Technical Information  
TrenchT2TM Power  
MOSFET  
VDSS = 40V  
ID25 = 420A  
RDS(on) ≤ 2.0mΩ  
IXTH420N04T2  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
TO-247  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
40  
40  
V
V
G
VDGR  
(TAB)  
D
S
VGSM  
Transient  
± 20  
V
ID25  
ILRMS  
IDM  
TC = 25°C (Chip Capability)  
Lead Current Limit, RMS  
420  
160  
A
A
A
G = Gate  
S = Source  
D
= Drain  
TAB = Drain  
TC = 25°C, Pulse Width Limited by TJM  
1050  
IA  
TC = 25°C  
TC = 25°C  
TC = 25°C  
200  
960  
935  
A
mJ  
W
EAS  
PD  
Features  
z International Standard Package  
z 175°C Operating Temperature  
z High Current Handling Capability  
z Avalanche Rated  
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +175  
z Fast Intrinsic Diode  
TL  
Tsold  
1.6mm (0.062in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
z
Low RDS(on)  
Md  
Mounting Torque  
1.13 / 10  
Nm/lb.in.  
Weight  
6
g
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS= 0V  
40  
V
V
Applications  
1.5  
3.5  
z
DC/DC Converters and Off-line UPS  
Primary- Side Switch  
z
±200 nA  
z
High Current Switching Applications  
IDSS  
10 μA  
TJ = 150°C  
300 μA  
RDS(on)  
VGS = 10V, ID = 100A, Note 1  
1.6  
2.0 mΩ  
DS100170(7/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXTH420N04T2  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXTH) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 60A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
70  
120  
S
Ciss  
Coss  
Crss  
19.7  
3220  
690  
nF  
pF  
pF  
∅ P  
1
2
3
RGi  
Gate Input Resistance  
1.45  
Ω
td(on)  
tr  
td(off)  
tf  
23  
27  
ns  
ns  
ns  
ns  
Resistive Switching Times  
e
V
GS = 10V, VDS = 0.5 • VDSS, ID = 100A  
70  
Terminals: 1 - Gate  
2 - Drain  
Tab - Drain  
RG = 2Ω (External)  
3 - Source  
155  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
Qg(on)  
Qgs  
315  
68  
nC  
nC  
nC  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
73  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
RthJC  
RthCH  
0.16 °C/W  
°C/W  
0.21  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Source-Drain Diode  
.780 .800  
.177  
Symbol  
Test Conditions  
Characteristic Values  
∅P 3.55  
Q
3.65  
.140 .144  
(TJ = 25°C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
IS  
VGS = 0V  
420  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
1680  
1.3  
trr  
74  
2.7  
ns  
A
IF = 150A, VGS = 0V  
IRM  
QRM  
-di/dt = 100A/μs  
VR = 20V  
100  
nC  
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTH420N04T2  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
350  
300  
250  
200  
150  
100  
50  
350  
300  
250  
200  
150  
100  
50  
VGS = 15V  
VGS = 10V  
10V  
8V  
7V  
8V  
6V  
5V  
6V  
5V  
4V  
4V  
0
0
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
7.0  
0.0  
0.0  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
1.0  
350  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 210A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
350  
300  
250  
200  
150  
100  
50  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGS = 15V  
VGS = 10V  
10V  
8V  
7V  
I D = 320A  
6V  
I D = 210A  
5V  
4V  
3V  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 210A Value vs.  
Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
180  
160  
140  
120  
100  
80  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
External Lead Current Limit  
TJ = 175ºC  
VGS = 10V  
15V  
- - - - -  
60  
TJ = 25ºC  
40  
20  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
50  
100  
150  
200  
250  
300  
ID - Amperes  
TC - Degrees Centigrade  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXTH420N04T2  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
240  
200  
160  
120  
80  
200  
180  
160  
140  
120  
100  
80  
TJ = - 40ºC  
25ºC  
150ºC  
60  
TJ = 150ºC  
25ºC  
- 40ºC  
40  
40  
20  
0
0
0
0
1
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
320  
100  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
1.2  
40  
ID - Amperes  
VGS - Volts  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
350  
300  
250  
200  
150  
100  
50  
VDS = 20V  
I
I
D = 210A  
G = 10mA  
TJ = 150ºC  
TJ = 25ºC  
0
40  
80  
120  
160  
200  
240  
280  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
QG - NanoCoulombs  
VSD - Volts  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
10,000  
1,000  
100  
100,000  
10,000  
1,000  
100  
= 1 MHz  
T
T
= 175ºC  
= 25ºC  
f
J
R
Limit  
C
DS(on)  
Single Pulse  
C
iss  
25µs  
C
100µs  
oss  
External Lead Current Limit  
1ms  
C
rss  
10ms  
DC  
100ms  
10  
0
5
10  
15  
20  
25  
30  
35  
10  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_420N04T2(V8)7-15-09  
IXTH420N04T2  
Fig. 13. Resistive Turn-on  
Fig. 14. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Rise Time vs. Drain Current  
36  
34  
32  
30  
28  
26  
24  
22  
36  
34  
32  
30  
28  
26  
24  
RG = 2ꢀ  
GS = 10V  
VDS = 20V  
RG = 2Ω  
V
VGS = 10V  
VDS = 20V  
TJ = 125ºC  
I D = 100A  
I D = 200A  
TJ = 25ºC  
40  
60  
80  
100  
120  
140  
160  
180  
200  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
360  
320  
280  
240  
200  
160  
120  
80  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
240  
200  
160  
120  
80  
110  
t r  
t
d(on) - - - -  
TJ = 125ºC, VGS = 10V  
DS = 20V  
tf  
t
d(off) - - - -  
RG = 2Ω, VGS = 10V  
DS = 20V  
100  
90  
80  
70  
60  
50  
I D = 200A, 100A  
V
V
I D = 100A  
I D = 200A  
40  
40  
0
0
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
2
4
6
8
10  
12  
14  
16  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
240  
200  
160  
120  
80  
120  
110  
100  
90  
600  
500  
400  
300  
200  
100  
0
600  
500  
400  
300  
200  
100  
0
t f  
t
d(off) - - - -  
TJ = 125ºC, VGS = 10V  
DS = 20V  
tf  
t
d(off) - - - -  
RG = 2ꢀ, VGS = 10V  
DS = 20V  
V
V
I D = 100A, 200A  
TJ = 125ºC, 25ºC  
80  
40  
70  
0
60  
40  
60  
80  
100  
120  
140  
160  
180  
200  
2
4
6
8
10  
12  
14  
16  
ID - Amperes  
RG - Ohms  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXTH420N04T2  
1
Fig. 19. Maximum Transient Thermal Impedance  
0.20  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_420N04T2(V8)7-15-09  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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