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IXTH48N65X2

型号：

IXTH48N65X2

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

156 K

下载PDF手册
Preliminary Technical Information  
X2-Class  
Power MOSFET  
VDSS = 650V  
ID25 = 48A  
RDS(on) 65m  
IXTH48N65X2  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-247  
G
D
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
S
D (Tab)  
D = Drain  
TJ = 25C to 150C  
650  
650  
V
V
G = Gate  
S = Source  
VDGR  
TJ = 25C to 150C, RGS = 1M  
Tab = Drain  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
48  
96  
A
A
IA  
TC = 25C  
TC = 25C  
20  
A
J
EAS  
1.5  
Features  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
50  
V/ns  
W
660  
International Standard Package  
Low RDS(ON) and QG  
TJ  
-55 ... +150  
150  
C  
C  
C  
Avalanche Rated  
TJM  
Tstg  
Low Package Inductance  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Advantages  
Md  
Mounting Torque  
1.13 / 10  
6
Nm/lb.in  
g
High Power Density  
Easy to Mount  
Space Savings  
Weight  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 250μA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
650  
V
V
3.0  
5.0  
100 nA  
IDSS  
10 A  
TJ = 125C  
200 A  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
65 m  
DS100676A(01/16)  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXTH48N65X2  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXTH) Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
D
A
A
0P  
+
B
O 0K M D B M  
E
+
A2  
A2  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
Gate Input Resistance  
24  
40  
S
Q
S
D2  
+
R
RGi  
1.2  
D1  
D
0P1  
4
Ciss  
Coss  
Crss  
4300  
3280  
6.4  
pF  
pF  
pF  
1
2
3
ixys option  
C
L1  
VGS = 0V, VDS = 25V, f = 1MHz  
E1  
L
Effective Output Capacitance  
A1  
b
b2  
Co(er)  
Co(tr)  
150  
665  
pF  
pF  
c
Energy related  
Time related  
VGS = 0V  
VDS = 0.8 • VDSS  
b4  
PINS: 1 - Gate  
e
+
O
2, 4 - Drain  
3 - Source  
J
M
C
A M  
td(on)  
tr  
td(off)  
tf  
19  
26  
50  
15  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
V
RG = 3(External)  
Qg(on)  
Qgs  
76  
22  
28  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
0.19 C/W  
C/W  
0.21  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
48  
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
192  
1.4  
A
V
trr  
QRM  
IRM  
400  
6
30  
ns  
IF = 24A, -di/dt = 100A/μs  
μC  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXTH48N65X2  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
48  
40  
32  
24  
16  
8
140  
120  
100  
80  
V
= 10V  
8V  
V
= 10V  
9V  
GS  
GS  
7V  
8V  
7V  
60  
6V  
5V  
40  
6V  
5V  
20  
0
0
0
0.5  
1
1.5  
2
2.5  
3
0
5
10  
15  
20  
25  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 24A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
48  
40  
32  
24  
16  
8
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
8V  
GS  
V
= 10V  
GS  
7V  
I
= 48A  
D
6V  
5V  
I
= 24A  
D
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
1
2
3
4
5
6
7
8
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 24A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
V
= 10V  
GS  
BV  
DSS  
T
J
= 125ºC  
V
GS(th)  
T
J
= 25ºC  
0
20  
40  
60  
80  
100  
120  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
TJ - Degrees Centigrade  
ID - Amperes  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXTH48N65X2  
Fig. 7. Maximum Drain Current vs.  
Case Temperature  
Fig. 8. Input Admittance  
56  
48  
40  
32  
24  
16  
8
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
T
J
= 125ºC  
25ºC  
- 40ºC  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 9. Transconductance  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
80  
70  
60  
50  
40  
30  
20  
10  
0
160  
140  
120  
100  
80  
T
J
= - 40ºC  
25ºC  
125ºC  
T
J
= 125ºC  
60  
T
J
= 25ºC  
40  
20  
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
ID - Amperes  
VSD - Volts  
Fig. 12. Capacitance  
Fig. 11. Gate Charge  
100,000  
10,000  
1,000  
100  
10  
8
V
= 325V  
DS  
I
I
= 24A  
D
G
C
iss  
= 10mA  
6
C
oss  
4
2
10  
= 1 MHz  
f
C
rss  
0
1
0
10  
20  
30  
40  
50  
60  
70  
80  
1
10  
100  
1000  
VDS - Volts  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTH48N65X2  
Fig. 13. Output Capacitance Stored Energy  
Fig. 14. Forward-Bias Safe Operating Area  
35  
30  
25  
20  
15  
10  
5
1000  
100  
10  
R
Limit  
)
DS(  
on  
25µs  
100µs  
1
T
= 150ºC  
= 25ºC  
J
T
1ms  
C
Single Pulse  
10ms  
0
0.1  
0
100  
200  
300  
400  
500  
600  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
aaaaa  
0.3  
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_48N65X2 (X6-S602) 1-06-16  
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