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IXTA2N100

型号：

IXTA2N100

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

5 页

PDF大小：

148 K

下载PDF手册
High Voltage  
MOSFET  
VDSS = 1000V  
ID25 = 2A  
RDS(on) ≤ 7Ω  
IXTA2N100  
IXTP2N100  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 (IXTA)  
G
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
(TAB)  
TJ = 25°C to 150°C  
1000  
1000  
V
V
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
TO-220 (IXTP)  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
ID25  
IDM  
TC = 25°C  
2
8
A
A
(TAB)  
G
TC = 25°C, Pulse Width Limited by TJM  
D
S
IA  
EAS  
TC = 25°C  
TC = 25°C  
2
150  
A
mJ  
G = Gate  
D
= Drain  
S = Source  
TAB = Drain  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
5
V/ns  
W
100  
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
°C  
°C  
°C  
Features  
z International Standard Packages  
z Avalanche Rated  
z Low Package Inductance (< 5nH)  
z Fast Switching Times  
TL  
1.6mm (0.062) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
TSOLD  
Md  
Mounting Torque  
(TO-220)  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1000  
2.0  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ±20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
4.5  
z Switched-Mode and Resonant-Mode  
Power Supplies  
z FlyBack Inverters  
±100 nA  
z DC Choppers  
IDSS  
25 μA  
TJ = 125°C  
100 μΑ  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
7
Ω
DS97540B(04/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXTA2N100  
IXTP2N100  
Symbol  
Test Conditions  
Characteristic Values  
TO-220 (IXTP) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
1.5  
2.5  
S
Ciss  
Coss  
Crss  
825  
58  
15  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
td(on)  
tr  
td(off)  
tf  
20  
23  
34  
21  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 20Ω (External)  
Qg(on)  
Qgs  
Qgd  
18.0  
3.7  
8.2  
nC  
nC  
nC  
VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Pins: 1 - Gate  
2 - Drain  
RthJC  
RthCS  
1.25 °C/W  
°C/W  
(TO-220)  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
2
A
A
V
ISM  
VSD  
Repetitive, pulse width limited by TJM  
IF = 2A, VGS = 0V, Note 1  
IF = 2A, -di/dt = 100A/μs, VR = 100V  
8
1.5  
TO-263 (IXTA) Outline  
trr  
800  
ns  
Note 1: Pulse Test, t ≤ 300 μs; Duty Cycle, d ≤ 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463 6,771,478 B2 7,071,537  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
IXTA2N100  
IXTP2N100  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
VGS = 10V  
VGS = 10V  
8V  
7V  
8V  
7V  
6V  
5V  
6V  
5V  
0
1
2
3
4
5
6
7
8
9
10 11 12  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 1A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGS = 10V  
6V  
VGS = 10V  
5V  
I D = 2A  
I D = 1A  
0
2
4
6
8
10 12 14 16 18 20 22 24  
VDS - Volts  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 1A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.0  
0.5  
1.0  
1.5  
2.0 2.5  
ID - Amperes  
3.0  
3.5  
4.0  
4.5  
TC - Degrees Centigrade  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXTA2N100  
IXTP2N100  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
TJ = - 40ºC  
25ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
125ºC  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
18  
10  
2.5  
0.3  
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
0.9  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
VDS = 500V  
I D = 1A  
I
G = 10mA  
TJ = 125ºC  
TJ = 25ºC  
0.4  
0.5  
0.6  
0.7  
0.8  
0
2
4
6
8
10  
12  
14  
16  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
10,000  
1,000  
100  
10.00  
1.00  
0.10  
0.01  
= 1 MHz  
f
C
iss  
C
oss  
C
rss  
10  
5
10  
15  
20  
25  
30  
35  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
VDS - Volts  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_2N100(3X-G68)4-16-09  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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