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IXTK20N140

型号：

IXTK20N140

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

131 K

下载PDF手册
Advance Technical Information  
High Voltage Power  
MOSFETs w/ Extended  
FBSOA  
VDSS  
ID25  
RDS(on) < 1Ω  
= 1400V  
= 20A  
IXTK20N140  
IXTX20N140  
N-Channel Enhancement Mode  
Avalanche Rated  
Guaranteed FBSOA  
TO-264 (IXTK)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
1400  
1400  
V
V
G
D
S
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
Tab  
ID25  
IDM  
TC = 25°C  
20  
50  
A
A
PLUS247 (IXTX)  
TC = 25°C, Pulse Width Limited by TJM  
IA  
TC = 25°C  
TC = 25°C  
10  
A
J
EAS  
2.5  
G
PD  
TC = 25°C  
1250  
W
D
S
Tab  
TJ  
-55 to +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
-55 to +150  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in.  
N/lb.  
Features  
20..120 /4.5..27  
Weight  
TO-264  
PLUS247  
10  
6
g
g
z Avalanche Rated  
z Fast Intrinsic Diode  
z Guaranteed FBSOA at 75°C  
z Low Package Inductance  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
(TJ = 25°C, Unless Otherwise Specified)  
Advantages  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 1mA  
VGS = ±30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
1400  
2.5  
V
V
z
Easy to Mount  
Space Savings  
4.5  
z
±200 nA  
IDSS  
50 μA  
500 μA  
Applications  
TJ = 125°C  
z High Voltage Power Supplies  
z Capacitor Discharge  
z Pulse Circuits  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
1
Ω
DS100368(07/11)  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXTK20N140  
IXTX20N140  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 30V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
14  
24  
S
Ciss  
Coss  
Crss  
7800  
487  
pF  
pF  
pF  
163  
td(on)  
tr  
td(off)  
tf  
35  
30  
80  
33  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Terminals: 1 - Gate  
2 - Drain  
RG = 1Ω (External)  
3 - Source  
4 - Drain  
Millimeter  
Inches  
Qg(on)  
Qgs  
215  
40  
nC  
nC  
nC  
Dim.  
Min.  
Max.  
Min.  
Max.  
VGS = 10V, VDS = 700V, ID = 0.5 • ID25  
A
A1  
A2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
Qgd  
93  
b
b1  
b2  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.021  
1.020  
.780  
.056  
.106  
.122  
.033  
1.030  
.786  
RthJC  
RthCS  
0.10 °C/W  
°C/W  
0.15  
c
0.53  
0.83  
D
25.91 26.16  
E
e
19.81 19.96  
5.46 BSC  
.215 BSC  
J
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
K
Safe Operating Area Specification  
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
2.29  
2.59  
P
3.17  
3.66  
.125  
.144  
Symbol  
SOA  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
R
R1  
S
T
3.81  
1.78  
6.04  
1.57  
4.32  
2.29  
6.30  
1.83  
.150  
.070  
.238  
.062  
.170  
.090  
.248  
.072  
VDS = 1400V, ID = 135mA, TC = 75°C, tp = 3s 190  
W
PLUS247TM Outline  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
20  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
80  
1.5  
trr  
QRM  
IRM  
1.1  
1.8  
32  
μs  
μC  
A
IF = 10A, -di/dt = 100A/μs  
Terminals: 1 - Gate  
2 - Drain  
VR = 100V, VGS = 0V  
3 - Source  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
L
L1  
5.45 BSC  
19.81 20.32  
3.81  
.215 BSC  
.780 .800  
.150 .170  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTK20N140  
IXTX20N140  
Fig. 2. Output Characteristics @ TJ = 125ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
16  
14  
12  
10  
8
30  
25  
20  
15  
10  
5
VGS = 10V  
6V  
VGS = 10V  
6V  
5V  
6
4
5V  
4V  
2
4V  
0
0
0
5
10  
15  
20  
25  
30  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 3. RDS(on) Normalized to ID = 10A Value vs.  
Junction Temperature  
Fig. 4. RDS(on) Normalized to ID = 10A Value vs.  
Drain Current  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
VGS = 10V  
TJ = 125ºC  
I D = 20A  
I D = 10A  
TJ = 25ºC  
0
4
8
12  
16  
20  
24  
28  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TJ - Degrees Centigrade  
Fig. 5. Maximum Drain Current vs.  
Case Temperature  
Fig. 6. Input Admittance  
28  
24  
20  
16  
12  
8
22  
20  
18  
16  
14  
12  
10  
8
TJ = 125ºC  
25ºC  
6
4
- 40ºC  
4
2
0
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
VGS - Volts  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXTK20N140  
IXTX20N140  
Fig. 8. Forward Voltage Drop of Intrinsic Diode  
Fig. 7. Transconductance  
60  
50  
40  
30  
20  
10  
0
40  
35  
30  
25  
20  
15  
10  
5
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
TJ = 25ºC  
0
0
5
10  
15  
20  
25  
30  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
ID - Amperes  
VSD - Volts  
Fig. 9. Gate Charge  
Fig. 10. Capacitance  
10  
8
100,000  
10,000  
1,000  
100  
VDS = 700V  
I D = 10A  
= 1 MHz  
f
C
I G = 10mA  
iss  
6
C
oss  
4
C
rss  
2
10  
0
0
5
10  
15  
20  
25  
30  
35  
40  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
220  
VDS - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
@ TC = 75ºC  
Fig. 11. Forward-Bias Safe Operating Area  
@ TC = 25ºC  
100  
10  
1
100  
10  
1
RDS(on) Limit  
RDS(on) Limit  
25µs  
100µs  
1ms  
100µs  
1ms  
10ms  
10ms  
TJ = 150ºC  
TJ = 150ºC  
C = 75ºC  
Single Pulse  
100ms  
TC = 25ºC  
T
100ms  
DC  
Single Pulse  
DC  
0.1  
0.1  
10  
100  
1,000  
10,000  
10  
100  
1,000  
10,000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTK20N140  
IXTX20N140  
Fig. 13. Maximum Transient Thermal Impedance  
aaaaaa  
0.3  
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXYS REF: IXT_20N140(9P)7-29-11  
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