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IXTX240N075L2

型号:

IXTX240N075L2

品牌:

LITTELFUSE[ LITTELFUSE ]

页数:

6 页

PDF大小:

205 K

Advance Technical Information  
LinearL2TM Power  
MOSFET w/Extended  
FBSOA  
VDSS  
ID25  
= 75V  
= 240A  
IXTK240N075L2  
IXTX240N075L2  
RDS(on) < 7m  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-264 (IXTK)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
75  
75  
V
V
VDGR  
TJ = 25C to 150C, RGS = 1M  
G
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
D
D (Tab)  
S
ID25  
IL(RMS)  
IDM  
TC = 25C (Chip Capability)  
External Lead Current Limit  
TC = 25C, pulse width limited by TJM  
240  
160  
720  
A
A
A
PLUS247 (IXTX)  
IA  
EAS  
TC = 25C  
TC = 25C  
240  
3
A
J
G
D
PD  
TC = 25C  
960  
W
D (Tab)  
= Drain  
S
TJ  
-55...+150  
150  
C  
C  
C  
TJM  
Tstg  
G = Gate  
S = Source  
D
-55...+150  
Tab = Drain  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Md  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in  
N/lb  
Features  
FC  
20..120 /4.5..27  
Designed for linear operation  
International standard packages  
Avalanche rated  
Guaranteed FBSOA at 75C  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
Easy to mount  
Space savings  
High power density  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
(TJ = 25C, unless otherwise specified)  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 3mA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
75  
V
Solid state circuit breakers  
Soft start controls  
Linear amplifiers  
Programmable loads  
Current regulators  
2.0  
4.5  
V
200 nA  
IDSS  
10  A  
50 A  
TJ = 125C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25 , Note 1  
7 m  
DS100769(12/16)  
© 2016 IXYS CORPORATION, All rights reserved  
IXTK240N075L2  
IXTX240N075L2  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 Outline  
(TJ = 25C, unless otherwise specified)  
Min.  
Typ.  
Max.  
A
E
Q
S
gfs  
VDS = 10V, ID = 60A, Note 1  
60  
86  
110  
S
R
D
Q1  
Ciss  
Coss  
Crss  
19  
4420  
1470  
nF  
pF  
pF  
R1  
1
2
3
VGS = 0V, VDS = 25V, f = 1MHz  
L1  
L
td(on)  
tr  
td(off)  
tf  
34  
200  
136  
47  
ns  
ns  
ns  
ns  
c
Resistive Switching Times  
b
A1  
b1  
e
x2  
b2  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1(External)  
0P  
4
Terminals:  
1
= Gate  
2,4 = Drain  
= Source  
BACK SIDE  
3
Qg(on)  
Qgs  
546  
86  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
225  
RthJC  
RthCS  
0.13 C/W  
C/W  
0.15  
Safe Operating Area Specification  
Symbol  
SOA  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
VDS = 75V, ID = 7.7A, TC = 75C, Tp = 5s  
575  
W
PLUS 247TM Outline  
A
E1  
E
Q
A2  
Source-Drain Diode  
D2  
R
D
D1  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, unless otherwise specified)  
Min.  
Typ.  
Max.  
240  
960  
1.5  
4
1
2
3
L1  
IS  
VGS = 0V  
A
A
V
L
ISM  
VSD  
Repetitive, pulse width limited by TJM  
IF = 100A, VGS = 0V, Note 1  
b
A1  
e
3 PLCS  
C
2 PLCS  
b2 2 PLCS  
trr  
IRM  
QRM  
206  
18.8  
1.9  
ns  
A
μC  
b4  
IF = 120A, -di/dt = 100A/s,  
VR = 37.5V, VGS = 0V  
Terminals: 1 - Gate  
2,4 - Drain  
3 - Source  
Note:  
1. Pulse test, t 300s; duty cycle, d  2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTK240N075L2  
IXTX240N075L2  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
240  
200  
160  
120  
80  
V
= 20V  
V
= 20V  
13V  
11V  
GS  
GS  
8V  
7V  
800  
600  
400  
200  
0
12V  
10V  
9V  
10V  
9V  
8V  
7V  
6V  
40  
6V  
5V  
5V  
4V  
0
0.0  
0.5  
1.0  
1.5  
2.0  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 120A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
240  
200  
160  
120  
80  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 20V  
8V  
7V  
GS  
V
= 10V  
GS  
15V  
12V  
10V  
9V  
I
= 240A  
D
6V  
I
= 120A  
D
5V  
4V  
40  
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 120A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
180  
160  
140  
120  
100  
80  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
V
= 10V  
20V  
GS  
External Lead Limit  
T = 125ºC  
J
60  
T = 25ºC  
J
40  
20  
0
0
100  
200  
300  
400  
500  
600  
700  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2016 IXYS CORPORATION, All rights reserved  
IXTK240N075L2  
IXTX240N075L2  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
600  
500  
400  
300  
200  
100  
0
220  
200  
180  
160  
140  
120  
100  
80  
T
J
= - 40ºC  
T
J
= - 40ºC  
25ºC  
25ºC  
125ºC  
125ºC  
60  
40  
20  
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
0
100  
200  
300  
400  
500  
600  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
800  
700  
600  
500  
400  
300  
200  
100  
0
10  
9
8
7
6
5
4
3
2
1
0
V
= 37.5V  
DS  
I
I
= 120A  
D
G
= 10mA  
T
J
= 25ºC  
T
J
= 125ºC  
0
50  
150  
200  
350  
500  
550  
100250300400450
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.2  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal Impedance  
Fig. 11. Capacitance  
aaaaa  
0.3  
0.1  
100,000  
10,000  
1,000  
f
= 1 MHz  
C
C
iss  
0.01  
oss  
C
rss  
0.001  
0
5
10  
15  
20  
25  
30  
35  
40  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTK240N075L2  
IXTX240N075L2  
Fig. 14. Forward-Bias Safe Operating Area  
Fig. 13. Forward-Bias Safe Operating Area  
@ TC = 25ºC  
@ TC = 75ºC  
1,000  
100  
10  
1,000  
100  
10  
25µs  
R
DS(on)  
Limit  
R
DS(on)  
Limit  
25µs  
100µs  
100µs  
External Lead Limit  
External LeadLimit  
1ms  
1ms  
10ms  
10ms  
100ms  
DC  
100ms  
DC  
TJ = 150ºC  
TJ = 150ºC  
TC = 75ºC  
TC = 25ºC  
Single Pulse  
Single Pulse  
1
1
1
10  
100  
1
10  
100  
VDS - Volts  
VDS - Volts  
© 2016 IXYS CORPORATION, All rights reserved  
IXYS REF: T_240N075L2(9R-T07)12-13-16  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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