请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一至周六 8:30-17:30

QQ咨询

一对一服务 找料无忧

专属客服：823711899

服务时间

周一至周六 8:30-17:30

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一至周六 8:30-17:30

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一至周六 8:30-17:30

IXTB62N50L

型号：

IXTB62N50L

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

151 K

下载PDF手册
LinearTM Power MOSFET  
w/Extended FBSOA  
VDSS = 500V  
ID25 = 62A  
RDS(on) ≤ 100mΩ  
IXTB62N50L  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
PLUS264TM  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
D
TJ = 25°C to 150°C  
500  
V
V
V
V
S
Tab  
VDGR  
VGSS  
VGSM  
TJ = 25°C to 150°C, RGS = 1MΩ  
Continuous  
500  
± 30  
± 40  
G = Gate  
D
= Drain  
S
= Source  
Tab = Drain  
Transient  
ID25  
IDM  
TC = 25°C  
62  
A
A
TC = 25°C, Pulse Width Limited by TJM  
150  
IA  
TC = 25°C  
TC = 25°C  
TC = 25°C  
80  
A
J
EAS  
PD  
5
800  
Features  
W
z
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
°C  
°C  
N/lb.  
g
Fast Intrinsic Diode  
Avalanche Rated  
Low RDS(ON) and QG  
Low Package Inductance  
z
z
z
TJM  
Tstg  
TL  
-55 ... +150  
300  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
TSOLD  
FC  
260  
Advantages  
Mounting Force  
30..120/6.7..27  
10  
z
High Power Density  
Easy to Mount  
Space Savings  
Weight  
z
z
Applications  
z
Programmable Loads  
DC-DC Converters  
Current Regulators  
Battery Chargers  
DC Choppers  
Temperature and Lighting  
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
500  
3.0  
Typ. Max.  
z
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
V
V
z
z
VDS = VGS, ID = 250μA  
VGS = ± 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
5.5  
Controls  
± 200 nA  
50 μA  
IDSS  
TJ = 125°C  
1
mA  
RDS(on)  
VGS = 20V, ID = 0.5 • ID25, Note 1  
100 mΩ  
DS99336B(11/11)  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXTB62N50L  
Symbol  
Test Conditions  
Characteristic Values  
PLUS264TM (IXTB) Outline  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
10  
15  
20  
S
Ciss  
Coss  
Crss  
11.5  
1460  
210  
nF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
36  
85  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
110  
75  
RG = 2Ω (External)  
Qg(on)  
Qgs  
550  
115  
180  
nC  
nC  
nC  
VGS = 20V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
0.156 °C/W  
°C/W  
0.15  
Safe Operating Area Specification  
Symbol  
SOA  
Test Conditions  
Characteristic Values  
Min.  
Typ.  
Max.  
VDS = 400V, ID = 750mA, TC = 90°C  
300  
W
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ. Max.  
IS  
VGS = 0V  
62  
A
A
ISM  
VSD  
trr  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
176  
1.5  
V
500  
ns  
IF = IS, VGS = 0V  
-di/dt = 100A/μs, VR = 100V  
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTB62N50L  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
VGS = 20V  
VGS = 20V  
16V  
140  
120  
100  
80  
60  
50  
40  
30  
20  
10  
0
16V  
14V  
14V  
12V  
12V  
10V  
9V  
60  
40  
10V  
9V  
20  
8V  
7V  
8V  
7V  
0
0
1
2
3
4
5
6
0
2
4
6
8
10  
12  
14  
16  
18  
20  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 31A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
VGS = 20V  
14V  
60  
VGS = 10V  
50  
40  
30  
20  
10  
0
12V  
10V  
I D = 62A  
I D = 31A  
9V  
8V  
7V  
6V  
0
2
4
6
8
10  
12  
14  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 31A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
70  
60  
50  
40  
30  
20  
10  
0
3.0  
VGS = 20V  
TJ = 125ºC  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
TJ = 25ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
20  
40  
60  
80  
100  
120  
140  
ID - Amperes  
TC - Degrees Centigrade  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXTB62N50L  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
30  
25  
20  
15  
10  
5
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
0
4
5
6
7
8
9
10  
11  
12  
13  
14  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
240  
200  
160  
120  
80  
20  
18  
16  
14  
12  
10  
8
VDS = 250V  
I D = 31A  
TJ = 25ºC  
I
G = 10mA  
TJ = 125ºC  
6
4
40  
2
0
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
1.4  
1.5  
0
50  
100  
150  
200  
250  
300  
350  
400  
450  
500  
550  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Maximum Transient Thermal Impedance  
100,000  
10,000  
1,000  
100  
1
= 1 MHz  
f
C
iss  
0.1  
C
oss  
0.01  
0.001  
C
rss  
0
5
10  
15  
20  
25  
30  
35  
40  
0.0001  
0.001  
0.01  
0.1  
1
VDS - Volts  
Pulse Width - Second  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTB62N50L  
Fig. 13. Forward-Bias Safe Operating Area  
@ TC = 25ºC  
Fig. 14. Forward-Bias Safe Operating Area  
@ TC = 90ºC  
1000  
100  
10  
1000  
100  
10  
RDS(on) Limit  
RDS(on) Limit  
25µs  
25µs  
100µs  
100µs  
1ms  
1ms  
10ms  
10ms  
DC  
1
1
DC  
TJ = 150ºC  
C = 90ºC  
Single Pulse  
TJ = 150ºC  
T
TC = 25ºC  
Single Pulse  
0.1  
0.1  
10  
100  
1,000  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_62N50L(9N) 11-04-11-B  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
厂商 型号 描述 页数 下载

IXYS

 		IXTA-200N085T N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ] 5 页

LITTELFUSE

 		IXTA02N250 [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN ] 5 页

IXYS

 		IXTA02N250HV [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 ] 5 页

LITTELFUSE

 		IXTA02N250HV [ Power Field-Effect Transistor, ] 6 页

IXYS

 		IXTA02N250HV-TRL [ Power Field-Effect Transistor, ] 5 页

IXYS

 		IXTA02N450HV 高电压功率MOSFET[ High Voltage Power MOSFETs ] 5 页

IXYS

 		IXTA05N100 高电压的MOSFET[ High Voltage MOSFET ] 4 页

IXYS

 		IXTA05N100-TRL [ Power Field-Effect Transistor, ] 5 页

LITTELFUSE

 		IXTA05N100HVTRL [ Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN ] 4 页

IXYS

 		IXTA05N100P [ Fast Intrinsic Diode ] 7 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

代理产品

代理品牌

代理器件

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.209175s