请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXTH75N10L2

型号：

IXTH75N10L2

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

141 K

下载PDF手册
Advance Technical Information  
LinearL2TM Power  
MOSFET w/extended  
FBSOA  
VDSS = 100V  
ID25 = 75A  
RDS(on) ≤ 21mΩ  
IXTH75N10L2  
IXTT75N10L2  
D
O
N-Channel Enhancement Mode  
Guaranteed FBSOA  
RGi  
w
w
G
O
Avalanche Rated  
TO-247 (IXTH)  
O
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
100  
100  
V
V
D
D (Tab)  
S
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
TO-268 (IXTT)  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
75  
A
A
225  
G
IA  
EAS  
TC = 25°C  
75  
2.5  
A
J
S
D (Tab)  
PD  
TC = 25°C  
400  
W
TJ  
-55 to +150  
°C  
°C  
°C  
G = Gate  
S = Source  
D
= Drain  
TJM  
Tstg  
+150  
Tab = Drain  
-55 to +150  
TL  
1.6mm (0.063in) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
TSOLD  
Features  
Md  
Mounting Torque (TO-247)  
1.13/10  
Nm/lb.in.  
Weight  
TO-247  
TO-268  
6.0  
4.0  
g
g
z Designed for Linear Operation  
z International Standard Packages  
z Avalanche Rated  
z Integrated Gate Resistor for Easy  
Paralleling  
z Guaranteed FBSOA at 75°C  
Symbol  
Test Conditions  
Characteristic Values  
Advantages  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
100  
2.5  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ±20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
z
Easy to Mount  
Space Savings  
High Power Density  
z
4.5  
z
±100 nA  
μA  
IDSS  
5
Applications  
TJ = 125°C  
VGS = 10V, ID = 0.5 • ID25 , Note 1  
50 μA  
21 mΩ  
z Solid State Circuit Breakers  
z Soft Start Controls  
RDS(on)  
z Linear Amplifiers  
z Programmable Loads  
z Current Regulators  
© 2009 IXYS CORPORATION, All Rights Reserved  
DS100200(9/09)  
IXTH75N10L2  
IXTT75N10L2  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXTH) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
35  
44  
53  
S
Ciss  
Coss  
Crss  
8100  
1280  
350  
pF  
pF  
pF  
∅ P  
1
2
3
RGi  
Integrated Gate Input Resistor  
3.0  
Ω
td(on)  
tr  
td(off)  
tf  
23  
14  
68  
15  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
e
RG = 0Ω (External)  
Terminals: 1 - Gate  
2 - Drain  
Tab - Drain  
3 - Source  
Qg(on)  
Qgs  
215  
36  
nC  
nC  
nC  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Qgd  
80  
RthJC  
RthCS  
0.31 °C/W  
°C/W  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
TO-247  
0.21  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Safe Operating Area Specification  
Characteristic Values  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
.780 .800  
.177  
Symbol  
SOA  
Test Conditions  
Min.  
Typ.  
Max.  
VDS = 80V, ID = 3A, TC = 75°C, Tp = 5s  
240  
W
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
TO-268 (IXTT) Outline  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
75  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
300  
1.4  
trr  
IRM  
QRM  
180  
16.2  
1.46  
ns  
A
μC  
IF = 37.5A, -di/dt = 100A/μs,  
VR = 50V, VGS = 0V  
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
Tab - Drain  
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTH75N10L2  
IXTT75N10L2  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
80  
70  
60  
50  
40  
30  
20  
10  
0
280  
240  
200  
160  
120  
80  
VGS = 20V  
VGS = 20V  
14V  
12V  
10V  
14V  
12V  
10V  
8V  
6V  
8V  
7V  
6V  
5V  
40  
4V  
0
0
5
10  
15  
20  
25  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 37.5A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 20V  
14V  
VGS = 10V  
12V  
10V  
I D = 75A  
8V  
6V  
I D = 37.5A  
4V  
0.0  
0.3  
0.6  
0.9  
1.2  
1.5  
1.8  
2.1  
2.4  
2.7  
3.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 37.5A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
80  
70  
60  
50  
40  
30  
20  
10  
0
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
0
20  
40  
60  
80 100 120 140 160 180 200 220 240 260  
ID - Amperes  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXTH75N10L2  
IXTT75N10L2  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
200  
180  
160  
140  
120  
100  
80  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
TJ = - 40ºC  
25ºC  
125ºC  
25ºC  
125ºC  
60  
40  
20  
0
3.5  
0.4  
0
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
1.3  
40  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
220  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
16  
14  
12  
10  
8
240  
200  
160  
120  
80  
VDS = 50V  
I D = 37.5A  
I G = 10mA  
6
TJ = 125ºC  
4
TJ = 25ºC  
40  
2
0
0
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
0
50  
100  
150  
200  
250  
300  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Maximum Transient Thermal Impedance  
100.0  
10.0  
1.0  
1.00  
0.10  
0.01  
= 1 MHz  
f
C
iss  
C
oss  
rss  
C
0.1  
0.0001  
0.001  
0.01  
0.1  
1
10  
5
10  
15  
20  
25  
30  
35  
Pulse Width - Seconds  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTH75N10L2  
IXTT75N10L2  
Fig. 13. Forward-Bias Safe Operating Area  
@ TC = 25ºC  
Fig. 14. Forward-Bias Safe Operating Area  
@ TC = 75ºC  
1,000  
100  
10  
1,000  
100  
10  
Limit  
R
Limit  
RDS(on)  
DS(on)  
25µs  
25µs  
100µs  
100µs  
1ms  
1ms  
10ms  
10ms  
100ms  
DC  
100ms  
DC  
TJ = 150ºC  
C = 75ºC  
Single Pulse  
TJ = 150ºC  
T
TC = 25ºC  
Single Pulse  
1
1
1
10  
100  
1
10  
100  
VDS - Volts  
VDS - Volts  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_75N10L2(7R)9-25-09  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
厂商 型号 描述 页数 下载

IXYS

 		IXTA-200N085T N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ] 5 页

LITTELFUSE

 		IXTA02N250 [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN ] 5 页

IXYS

 		IXTA02N250HV [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 ] 5 页

LITTELFUSE

 		IXTA02N250HV [ Power Field-Effect Transistor, ] 6 页

IXYS

 		IXTA02N250HV-TRL [ Power Field-Effect Transistor, ] 5 页

IXYS

 		IXTA02N450HV 高电压功率MOSFET[ High Voltage Power MOSFETs ] 5 页

IXYS

 		IXTA05N100 高电压的MOSFET[ High Voltage MOSFET ] 4 页

IXYS

 		IXTA05N100-TRL [ Power Field-Effect Transistor, ] 5 页

LITTELFUSE

 		IXTA05N100HVTRL [ Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN ] 4 页

IXYS

 		IXTA05N100P [ Fast Intrinsic Diode ] 7 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.164589s