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IXTH1N450HV

型号：

IXTH1N450HV

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

214 K

下载PDF手册
High Voltage  
Power MOSFET  
VDSS  
ID25  
RDS(on)  80  
= 4500V  
= 1A  
IXTT1N450HV  
IXTH1N450HV  
N-Channel Enhancement Mode  
TO-268HV (IXTT)  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-247HV (IXTH)  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
4500  
4500  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G
S
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
1
3
A
A
D (Tab)  
D
PD  
TC = 25C  
520  
W
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
C  
C  
C  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
FC  
Mounting Force (TO-263HV)  
Mounting Torque (TO-247HV)  
10..65 / 22..14.6  
1.13/10  
N/lb  
Features  
Md  
Nm/lb.in  
Weight  
TO-263HV  
TO-247HV  
2.5  
6.0  
g
g
High Blocking Voltage  
High Voltage Package  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
Easy to Mount  
Space Savings  
High Power Density  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ. Max.  
6.0  
100 nA  
A  
VGS(th)  
IGSS  
VDS = VGS, ID = 250A  
VGS = 20V, VDS = 0V  
3.5  
V
IDSS  
VDS = 3.6kV, VGS = 0V  
VDS = 4.5kV  
5
Applications  
25 μA  
VDS = 3.6kV  
TJ = 100C  
15  
μA  
High Voltage Power Supplies  
Capacitor Discharge Applications  
Pulse Circuits  
Laser and X-Ray Generation Systems  
RDS(on)  
VGS = 10V, ID = 50mA, Note 1  
80  
DS100500D(04/14)  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXTT1N450HV  
IXTH1N450HV  
Symbol  
Test Conditions  
Characteristic Values  
TO-268HV Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
E
A
E1  
L2  
C2  
gfs  
VDS = 50V, ID = 200mA, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
Gate Input Resistance  
0.40  
0.70  
S
3
D1  
3
D
H
D2  
Ciss  
Coss  
Crss  
1700  
80  
pF  
pF  
pF  
1
2
D3  
2
1
A1  
L4  
C
e
e
b
29  
PINS:  
1 - Gate  
2 - Source  
3 - Drain  
RGi  
12  
td(on)  
tr  
td(off)  
tf  
30  
43  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 500V, ID = 0.5 • ID25  
RG = 10(External)  
L3  
A2  
L
73  
120  
Qg(on)  
Qgs  
46  
8
nC  
nC  
nC  
VGS = 10V, VDS = 1kV, ID = 0.5 • ID25  
Qgd  
23  
RthJC  
RthCS  
0.24 C/W  
C/W  
TO-247HV  
0.21  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
TO-247HV Outline  
IS  
VGS = 0V  
1
A
A
E1  
E
A
R
0P  
0P1  
A2  
Q
S
ISM  
VSD  
trr  
Repetitive, Pulse Width Limited by TJM  
IF = 1A, VGS = 0V, Note 1  
IF = 1A, -di/dt = 50A/μs, VR = 100V  
5
D1  
D2  
D
4
2.0  
V
1.75  
μs  
1
2
3
L1  
A3  
2X  
D3  
E2  
E3  
4X  
A1  
L
e
b
b1  
c
e1  
3X  
3X  
PINS:  
1 - Gate 2 - Source  
3, 4 - Drain  
Note  
1. Pulse test, t 300s, duty cycle, d 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTT1N450HV  
IXTH1N450HV  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Output Characteristics @ TJ = 125ºC  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
V
= 10V  
GS  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
V
= 10V  
7V  
GS  
7V  
6V  
6.5V  
6V  
5V  
0
20  
40  
60  
80  
100  
120  
140  
0
20  
40  
60  
80  
100  
120  
140  
160  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 0.5A Value vs.  
Drain Current  
Fig. 3. RDS(on) Normalized to ID = 0.5A Value vs.  
Junction Temperature  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
GS  
V
= 10V  
GS  
T = 125ºC  
J
I
= 1A  
D
I
= 0.5A  
D
T = 25ºC  
J
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TJ - Degrees Centigrade  
Fig. 5. Maximum Drain Current vs.  
Case Temperature  
Fig. 6. Input Admittance  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
T
J
= 125ºC  
25ºC  
- 40ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
TC - Degrees Centigrade  
VGS - Volts  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXTT1N450HV  
IXTH1N450HV  
Fig. 7. Transconductance  
Fig. 8. Forward Voltage Drop of Intrinsic Diode  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
T
J
= - 40ºC  
25ºC  
125ºC  
T
J
= 125ºC  
T
J
= 25ºC  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
VSD - Volts  
ID - Amperes  
Fig. 9. Gate Charge  
Fig. 10. Capacitance  
10  
9
8
7
6
5
4
3
2
1
0
10,000  
1,000  
100  
V
= 1000V  
f
= 1 MHz  
DS  
I
I
= 0.5A  
D
G
= 10mA  
C
iss  
C
C
oss  
rss  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
0
5
10  
15  
20  
25  
30  
35  
40  
VDS - Volts  
QG - NanoCoulombs  
Fig. 11. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTT1N450HV  
IXTH1N450HV  
Fig. 12. Forward-Bias Safe Operating Area  
@ TC = 25ºC  
Fig. 13. Forward-Bias Safe Operating Area  
@ TC = 75ºC  
10  
10  
R
DS(on)  
Limit  
R
DS(on)  
Limit  
25µs  
100µs  
25µs  
1
1
100µs  
1ms  
1ms  
0.1  
0.1  
10ms  
10ms  
T
= 150ºC  
= 25ºC  
J
DC  
T
= 150ºC  
= 75ºC  
J
100ms  
100ms  
T
C
T
C
DC  
Single Pulse  
Single Pulse  
0.01  
0.01  
100  
1,000  
10,000  
100  
1,000  
10,000  
VDS - Volts  
VDS - Volts  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_1N450(H7-P640)10-11-13  
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