请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXTA220N04T2-7

型号：

IXTA220N04T2-7

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

170 K

下载PDF手册
TrenchT2TM  
Power MOSFET  
VDSS = 40V  
ID25 = 220A  
RDS(on) ≤ 3.5mΩ  
IXTA220N04T2-7  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 (7-lead)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
1
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
40  
40  
V
V
VDGR  
7
(TAB)  
VGSM  
Transient  
± 20  
V
ID25  
ILRMS  
IDM  
TC = 25°C  
220  
160  
660  
A
A
A
Pins: 1 - Gate  
2, 3 - Source  
Lead Current Limit, RMS  
TC = 25°C, pulse width limited by TJM  
5,6,7 - Source  
TAB (8) - Drain  
IAR  
TC = 25°C  
TC = 25°C  
110  
600  
A
EAS  
mJ  
PD  
TC = 25°C  
360  
W
Features  
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
z International standard package  
z 175°C Operating Temperature  
z High current handling capability  
z Avalanche Rated  
TJM  
Tstg  
-55 ... +175  
TL  
TSOLD  
1.6mm (0.062in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
z
Low RDS(on)  
Weight  
3
g
Advantages  
z
Easy to mount  
Space savings  
High power density  
z
z
Applications  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
• Synchronous Buck Converters  
• High Current Switching Power  
Supplies  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ± 20V, VDS = 0V  
40  
V
V
2.0  
4.0  
• Battery Powered Electric Motors  
±200 nA  
μA  
• Resonant-mode power supplies  
• Electronics Ballast Application  
• Class D Audio Amplifiers  
IDSS  
VDS = VDSS  
VGS = 0V  
5
TJ = 150°C  
50 μA  
3.5 mΩ  
RDS(on)  
VGS = 10V, ID = 50A, Notes 1, 2  
2.8  
DS99962A(11/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXTA220N04T2-7  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
TO-263 (7-lead) (IXTA..7) Outline  
(TJ = 25°C, unless otherwise specified)  
gfs  
VDS = 10V, ID = 60A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
40  
66  
S
Ciss  
Coss  
Crss  
6820  
1185  
250  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
15  
21  
31  
21  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 20V, ID = 50A  
RG = 3.3Ω (External)  
Qg(on)  
Qgs  
112  
33  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
30  
Pins: 1 - Gate  
2, 3 - Source  
4 - Drain  
RthJC  
0.42 °C/W  
5,6,7 - Source  
Tab (8) - Drain  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
220  
660  
1.0  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, Pulse width limited by TJM  
IF = 50A, VGS = 0V, Note 1  
trr  
45  
1.4  
32  
ns  
A
IF = 110A, VGS = 0V  
IRM  
QRM  
-di/dt = 100A/μs  
VR = 20V  
nC  
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5mm or less from the package body.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTA220N04T2-7  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
350  
300  
250  
200  
150  
100  
50  
220  
200  
180  
160  
140  
120  
100  
80  
VGS = 15V  
VGS = 15V  
10V  
9V  
10V  
9V  
8V  
8V  
7V  
7V  
6V  
6V  
5V  
60  
40  
5V  
20  
0
0
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 110A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
220  
200  
180  
160  
140  
120  
100  
80  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGS = 15V  
VGS = 10V  
10V  
9V  
8V  
I D = 220A  
I D = 110A  
7V  
6V  
60  
40  
5V  
20  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 110A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
180  
External Lead Current Limit  
VGS = 10V  
160  
140  
120  
100  
80  
15V  
- - - -  
TJ = 175ºC  
60  
TJ = 25ºC  
40  
20  
0
0
40  
80  
120  
160  
200  
240  
280  
320  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
ID - Amperes  
TC - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXTA220N04T2-7  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
120  
100  
80  
60  
40  
20  
0
160  
140  
120  
100  
80  
TJ = - 40ºC  
25ºC  
150ºC  
TJ =150ºC  
25ºC  
- 40ºC  
60  
40  
20  
0
2.5  
3
3.5  
4
4.5  
5
5.5  
6
6.5  
1.3  
40  
0
20  
40  
60  
80  
100  
120  
140  
160  
120  
100  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
300  
270  
240  
210  
180  
150  
120  
90  
VDS = 20V  
I
D = 110A  
I G = 10mA  
TJ = 150ºC  
60  
TJ = 25ºC  
30  
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
0
20  
40  
60  
80  
100  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
100,000  
10,000  
1,000  
100  
1,000  
f
= 1 MHz  
R
Limit  
DS(on)  
25µs  
C
100µs  
iss  
100  
10  
1
External Lead Limit  
1ms  
C
oss  
10ms  
DC  
T
T
= 175ºC  
= 25ºC  
J
100ms  
C
rss  
C
Single Pulse  
0
5
10  
15  
20  
25  
30  
35  
1
10  
VDS - Volts  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: T_220N04T2(V5) 4-24-08-C  
IXTA220N04T2-7  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
RG = 3.3Ω  
RG = 3.3Ω  
VGS = 10V  
VDS = 20V  
VGS = 10V  
VDS = 20V  
TJ = 125ºC  
TJ = 25ºC  
I D = 110A  
I D = 220A  
40  
60  
80  
100  
120  
140  
160  
180  
200  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
36  
34  
32  
30  
28  
26  
24  
22  
20  
18  
16  
14  
12  
42  
130  
70  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
40  
38  
36  
34  
32  
30  
28  
26  
24  
22  
20  
18  
120  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
tf  
t
d(off) - - - -  
t r  
t
d(on) - - - -  
RG = 3.3Ω, VGS = 10V  
DS = 20V  
TJ = 125ºC, VGS = 10V  
VDS = 20V  
V
I D = 220A  
I D = 220A, 110A  
I D = 110A  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
2
4
6
8
10  
12  
14  
16  
18  
20  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
200  
180  
160  
140  
120  
100  
80  
200  
180  
160  
140  
120  
100  
80  
42  
38  
34  
30  
26  
22  
18  
14  
50  
46  
42  
38  
34  
30  
26  
22  
tf  
t
d(off) - - - -  
tf  
t
d(off) - - - -  
RG = 3.3Ω, VGS = 10V  
TJ = 125ºC, VGS = 10V  
VDS = 20V  
VDS = 20V  
TJ = 125ºC  
I D = 110A  
60  
60  
40  
40  
I D = 220A  
20  
20  
TJ = 25ºC  
160  
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
40  
60  
80  
100  
120  
140  
180  
200  
RG - Ohms  
ID - Amperes  
© 2008 IXYS CORPORATION, All rights reserved  
IXTA220N04T2-7  
Fig. 19. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: T_220N04T2(V5) 4-24-08-C  
厂商 型号 描述 页数 下载

IXYS

 		IXTA-200N085T N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ] 5 页

LITTELFUSE

 		IXTA02N250 [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN ] 5 页

IXYS

 		IXTA02N250HV [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 ] 5 页

LITTELFUSE

 		IXTA02N250HV [ Power Field-Effect Transistor, ] 6 页

IXYS

 		IXTA02N250HV-TRL [ Power Field-Effect Transistor, ] 5 页

IXYS

 		IXTA02N450HV 高电压功率MOSFET[ High Voltage Power MOSFETs ] 5 页

IXYS

 		IXTA05N100 高电压的MOSFET[ High Voltage MOSFET ] 4 页

IXYS

 		IXTA05N100-TRL [ Power Field-Effect Transistor, ] 5 页

LITTELFUSE

 		IXTA05N100HVTRL [ Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN ] 4 页

IXYS

 		IXTA05N100P [ Fast Intrinsic Diode ] 7 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.293918s