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XZ1002-BD-000V

型号:

XZ1002-BD-000V

品牌:

MIMIX[ MIMIX BROADBAND ]

页数:

11 页

PDF大小:

1519 K

XZ1002-BD  
8.5-11.0 GHz GaAs MMIC  
Core Chip  
Rev 11-Nov-10  
Features  
• Highly Integrated Core Chip  
Chip Device Layout  
Transmit and Receive Modes of Operation  
• Integrated T/R Switches, LNA and Driver Amplifier  
6-Bit Phase Shifter and 5-Bit Attenuator  
• 21.0 dB Small Signal RX Gain  
• +23 dBm TX Output Power (Psat)  
• Compensated On-Chip Gate Bias Circuit  
• Parallel Data Input  
• 100% On-Wafer RF, DC and Output Power Testing  
• 100% Visual Inspection to MIL-STD-883 Method 2010  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
6V  
Gate Supply (Vs)  
-6V to -4V  
0 to 5.5V  
General Description  
Logic Supply (Vl)  
The XZ1002-BD is a highly integrated dual path transmit/receive 3  
port core chip. It is designed for applications operating within the 8.5  
to 11.0 GHz range. The core consists of integrated transmit/receive  
switches, LNA, 6-bit phase shifter, 5-bit attenuator and driver  
amplifier. The digital control logic allows for parallel data input so that  
the phase shifter and attenuator may be changed instantaneously.  
The chip has surface passivation to protect and provide a rugged part  
with backside via holes and gold metallization to allow either a  
conductive epoxy or eutectic solder die attach process. This device is  
well suited for phased array radar applications.  
Supply Current (Id)  
Input Power RX  
350 mA  
+20 dBm  
Input Power RFCOM  
Storage Temperature (Tstg)  
Operating Temperature (Ta)  
Channel Temperature  
+15 dBm  
-65 to +165 ºC  
-55 to MTTF Graph1  
MTTF Graph1  
(1) Channel temperature affects a device's MTTF. It is recommended  
to keep channel temperature as low as possible for maximum life.  
Electrical Characteristics (Ambient Temperature T=25 oC)  
Parameter  
Units  
GHz  
dB  
dB  
dB  
Min.  
8.5  
Typ.  
Max.  
11  
Frequency Range (f)  
Input Return Loss RX/TX Mode (S11)  
Output Return Loss RX/TX Mode (S22)  
Receive Small Signal Gain (S21)  
Transmit Small Signal Gain (S21)  
Receive Output Power (Psat)  
15.0  
12.0  
21.0  
22.0  
19.0  
23.0  
18.0  
22.0  
5.2  
19.0  
dB  
dBm  
dBm  
dBm  
dBm  
dB  
17.0  
21.0  
16.0  
20.0  
Transmit Output Power (Psat)  
Receive Output Power for 1 dB Compression Point (P1dB)  
Transmit Output Power for 1 dB Compression Point (P1dB)  
Receive Noise Figure (NF)  
Receive Output Third Order Intercept (OIP3)  
Phase Shifter Range (6 Bit, 64 states, 5.625 deg step)  
RMS Phase Error  
Attenuator Range (5 Bit, 32 states, 0.9 dB step)  
RMS Attenuator Amplitude Error  
Drain Bias Voltage (Vd1,2,3,4)  
Gate Bias Voltage (Vs1,2,3)  
Control Voltage High (Va0,1,2,3,4) & (Vp0,1,2,3,4,5)  
Control Voltage Low (Va0,1,2,3,4) & (Vp0,1,2,3,4,5)  
Supply Current (Id) (Vd=4V, TX mode)  
Supply Current (Ia) (Vs=-5V)  
dBm  
deg  
deg  
dB  
+28.0  
0
0
355  
28.5  
+4.5  
1.5  
dB  
0.3  
+4.0  
-5.0  
+3.3  
-
VDC  
VDC  
VDC  
VDC  
mA  
-
-4.0  
+2.0  
0.0  
+5.0  
+0.8  
280  
35  
mA  
Supply Current (Il) (Vl=3.3V)  
mA  
9.5  
Page 1 of 11  
ADVANCED: Data sheets contain information regarding a product M/A-COM Tech Asia is  
considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data sheets contain information regarding a product M/A-COM Tech Asia has  
under development. Performance is based on engineering tests. Specifications are typical.  
Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
3F, 3-2 Industry East IX Road, Science-Based Industrial Park  
Hsinchu 30075 Taiwan, R.O.C  
Tel +886-3-567-9680 / Fax +886-3-567-9433  
Email mtatechnicalhelp@macomtech.com  
Visit macomtechasia.com for additional data sheets and product information.  
Characteristic data and specifications are subject to change without notice.  
©2010 M/A-COM Tech Asia  
XZ1002-BD  
8.5-11.0 GHz GaAs MMIC  
Core Chip  
Rev 11-Nov-10  
Measurements (Multiple Devices)  
S21 in Receive Mode  
S21 in Transmit Mode  
TX mode reference state measured at TA=35 ºC  
RX mode reference state measured at TA=35 ºC  
23  
22.5  
22  
29.5  
29  
28.5  
28  
27.5  
27  
26.5  
26  
21.5  
21  
20.5  
20  
19.5  
19  
25.5  
25  
24.5  
18.5  
18  
Frequency (GHz)  
Frequency (GHz)  
S11 in Receive Mode  
RX mode reference state measured at TA=35 ºC  
S11 in Transmit Mode  
TX mode reference state measured at TA=35 ºC  
0
0
-5  
-5  
-10  
-15  
-20  
-25  
-30  
-10  
-15  
-20  
-25  
-30  
7
7.5  
8
8.5  
9
9.5  
10  
10.5  
11  
11.5  
12  
7
7.5  
8
8.5  
9
9.5  
10  
10.5  
11  
11.5  
12  
Frequency [GHz]  
Frequency [GHz]  
S22 in Receive Mode  
RX mode reference state measured at TA=35 ºC  
S22 in Transmit Mode  
TX mode reference state measured at TA=35 ºC  
0
-5  
0
-5  
-10  
-15  
-20  
-25  
-30  
-10  
-15  
-20  
-25  
-30  
7
7.5  
8
8.5  
9
9.5  
10  
10.5  
11  
11.5  
12  
7
7.5  
8
8.5  
9
9.5  
10  
10.5  
11  
11.5  
12  
Frequency [GHz]  
Frequency [GHz]  
Page 2 of 11  
ADVANCED: Data sheets contain information regarding a product M/A-COM Tech Asia is  
3F, 3-2 Industry East IX Road, Science-Based Industrial Park  
Hsinchu 30075 Taiwan, R.O.C  
Tel +886-3-567-9680 / Fax +886-3-567-9433  
Email mtatechnicalhelp@macomtech.com  
Visit macomtechasia.com for additional data sheets and product information.  
Characteristic data and specifications are subject to change without notice.  
©2010 M/A-COM Tech Asia  
considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data sheets contain information regarding a product M/A-COM Tech Asia has  
under development. Performance is based on engineering tests. Specifications are typical.  
Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
XZ1002-BD  
8.5-11.0 GHz GaAs MMIC  
Core Chip  
Rev 11-Nov-10  
Measurements (cont.)  
Attenuator Performance in Receive Mode  
Attenuator Performance in Receive Mode  
RX mode measured at TA =35 ºC  
RX mode measured at TA =35 ºC  
30.0  
29.5  
29.0  
28.5  
28.0  
27.5  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
7.0  
7.5  
8.0  
8.5  
9.0  
9.5  
10.0  
10.5  
11.0  
11.5  
12.0  
7.0  
7.5  
8.0  
8.5  
9.0  
9.5  
10.0  
10.5  
11.0  
11.5  
12.0  
Frequency [GHz]  
Frequency [GHz]  
Attenuator Performance in Receive Mode  
RX mode measured at TA =35 ºC  
Phase Shifter Performance in Receive Mode  
RX mode measured at TA=35 ºC  
10.0  
9.0  
8.0  
7.0  
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
-350.0  
-351.0  
-352.0  
-353.0  
-354.0  
-355.0  
-356.0  
-357.0  
-358.0  
-359.0  
-360.0  
7.0  
7.5  
8.0  
8.5  
9.0  
9.5  
10.0  
10.5  
11.0  
11.5  
12.0  
7.0  
7.5  
8.0  
8.5  
9.0  
9.5  
10.0  
10.5  
11.0  
11.5  
12.0  
Frequency [GHz]  
Frequency [GHz]  
Phase Shifter Performance in Receive Mode  
RX mode measured at TA=35 ºC  
Phase Shifter Performance in Receive Mode  
RX mode measured at TA =35 ºC  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
5
4.5  
4
3.5  
3
2.5  
2
1.5  
1
0.5  
0
7.0  
7.5  
8.0  
8.5  
9.0  
9.5  
10.0  
10.5  
11.0  
11.5  
12.0  
7.0  
7.5  
8.0  
8.5  
9.0  
9.5  
10.0  
10.5  
11.0  
11.5  
12.0  
Frequency [GHz]  
Frequency [GHz]  
Page 3 of 11  
ADVANCED: Data sheets contain information regarding a product M/A-COM Tech Asia is  
3F, 3-2 Industry East IX Road, Science-Based Industrial Park  
Hsinchu 30075 Taiwan, R.O.C  
Tel +886-3-567-9680 / Fax +886-3-567-9433  
Email mtatechnicalhelp@macomtech.com  
Visit macomtechasia.com for additional data sheets and product information.  
Characteristic data and specifications are subject to change without notice.  
©2010 M/A-COM Tech Asia  
considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data sheets contain information regarding a product M/A-COM Tech Asia has  
under development. Performance is based on engineering tests. Specifications are typical.  
Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
XZ1002-BD  
8.5-11.0 GHz GaAs MMIC  
Core Chip  
Rev 11-Nov-10  
Measurements (cont.)  
Attenuator Performance over 32 States in Receive Mode  
30  
29.0  
28.5  
28.0  
27.5  
27.0  
26.5  
20  
10  
0
26.0  
7
7
8
9
10  
11  
12  
8
9
10  
11  
12  
Frequency [GHz]  
Frequency [GHz]  
Phase Shifter Performance over 64 States in Receive Mode  
360  
-350  
-355  
-360  
-365  
-370  
-375  
300  
240  
180  
120  
60  
0
-380  
7
7
8
9
10  
11  
12  
8
9
10  
11  
12  
Frequency [GHz]  
Frequency [GHz]  
Large Signal Performance  
Sample measured at TA=35 C  
NF versus Temperature in Receive Mode  
10  
9
25  
24  
23  
22  
21  
20  
19  
18  
17  
8
7
6
5
4
Ta=10_C  
Ta=35_C  
Ta=60_C  
3
2
1
0
7
7.5  
8
8.5  
9
9.5  
10  
10.5  
11  
11.5  
12  
8
8.25  
8.5 8.75  
9
9.25 9.5  
9.75  
10 10.25 10.5 10.75 11 11.25 11.5  
Frequency [GHz]  
Frequency (GHz)  
Page 4 of 11  
ADVANCED: Data sheets contain information regarding a product M/A-COM Tech Asia is  
3F, 3-2 Industry East IX Road, Science-Based Industrial Park  
Hsinchu 30075 Taiwan, R.O.C  
Tel +886-3-567-9680 / Fax +886-3-567-9433  
Email mtatechnicalhelp@macomtech.com  
Visit macomtechasia.com for additional data sheets and product information.  
Characteristic data and specifications are subject to change without notice.  
©2010 M/A-COM Tech Asia  
considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data sheets contain information regarding a product M/A-COM Tech Asia has  
under development. Performance is based on engineering tests. Specifications are typical.  
Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
XZ1002-BD  
8.5-11.0 GHz GaAs MMIC  
Core Chip  
Rev 11-Nov-10  
Measurements (cont.)  
Large Signal Performance  
Sample measured at Ta=35 C  
Large Signal Performance  
Sample measured at Ta=35 C  
26  
22  
24  
22  
20  
18  
16  
14  
12  
10  
8
8.5 GHz  
8.5 GHz  
20  
18  
16  
14  
12  
10  
10 GHz  
10 GHz  
8.75 GHz  
9 GHz  
8.75 GHz  
9 GHz  
10.25 GHz  
10.5 GHz  
10.75 GHz  
11 GHz  
10.25 GHz  
10.5 GHz  
10.75 GHz  
11 GHz  
9.25 GHz  
9.5 GHz  
9.75 GHz  
9.25 GHz  
9.5 GHz  
9.75 GHz  
6
4
-15 -14 -13 -12 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1  
0
1
2
3
4
5
-15 -14 -13 -12 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1  
0
1
2
3
4
5
Pin (dBm)  
Pin (dBm)  
IIP3 versus Temperature in Receive Mode  
OIP3 versus Temperature in Receive Mode  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
15  
14  
13  
12  
11  
10  
9
Ta=10_C  
Ta=35_C  
Ta=60_C  
Ta=10_C  
Ta=35_C  
Ta=60_C  
8
7
6
5
7
7.5  
8
8.5  
9
9.5  
10  
10.5  
11  
11.5  
12  
7
7.5  
8
8.5  
9
9.5  
10  
10.5  
11  
11.5  
12  
Frequency [GHz]  
Frequency [GHz]  
Gain Phase Plots  
Measured in RX-mode at f=10 GHz and Ta=35 °C  
Measured in TX-mode at f=10 GHz and Ta=35 °C  
360  
315  
270  
225  
180  
135  
90  
360  
315  
270  
225  
180  
135  
90  
45  
45  
0
0
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28  
30  
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28  
Attenuation [dB]  
30  
Attenuation [dB]  
Page 5 of 11  
ADVANCED: Data sheets contain information regarding a product M/A-COM Tech Asia is  
3F, 3-2 Industry East IX Road, Science-Based Industrial Park  
Hsinchu 30075 Taiwan, R.O.C  
Tel +886-3-567-9680 / Fax +886-3-567-9433  
Email mtatechnicalhelp@macomtech.com  
Visit macomtechasia.com for additional data sheets and product information.  
Characteristic data and specifications are subject to change without notice.  
©2010 M/A-COM Tech Asia  
considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data sheets contain information regarding a product M/A-COM Tech Asia has  
under development. Performance is based on engineering tests. Specifications are typical.  
Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
XZ1002-BD  
8.5-11.0 GHz GaAs MMIC  
Core Chip  
Rev 11-Nov-10  
Measurements (cont.)  
4V Supply Current in Receive Mode over Temperature  
4V Supply Current in Transmit Mode over Temperature  
300  
250  
240  
230  
220  
210  
200  
190  
180  
170  
160  
150  
290  
280  
270  
260  
Ta=10_C  
Ta=35_C  
Ta=60_C  
Ta=10_C  
Ta=35_C  
Ta=60_C  
8
8.5  
9
9.5  
10  
10.5  
11  
8
8.5  
9
9.5  
10  
10.5  
11  
Frequency [GHz]  
Frequency [GHz]  
DC Power Dissipation in Receive Mode over Temperature  
DC Power Dissipation in Transmit Mode over Temperature  
1500  
1500  
1400  
1300  
1200  
1100  
1000  
900  
1400  
1300  
1200  
1100  
1000  
900  
Ta=10_C  
Ta=35_C  
Ta=60_C  
Ta=10_C  
Ta=35_C  
Ta=60_C  
800  
800  
700  
700  
600  
600  
500  
500  
8
8.5  
9
9.5  
10  
10.5  
11  
8
8.5  
9
9.5  
10  
10.5  
11  
Frequency [GHz]  
Frequency [GHz]  
Page 6 of 11  
ADVANCED: Data sheets contain information regarding a product M/A-COM Tech Asia is  
considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data sheets contain information regarding a product M/A-COM Tech Asia has  
under development. Performance is based on engineering tests. Specifications are typical.  
Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
3F, 3-2 Industry East IX Road, Science-Based Industrial Park  
Hsinchu 30075 Taiwan, R.O.C  
Tel +886-3-567-9680 / Fax +886-3-567-9433  
Email mtatechnicalhelp@macomtech.com  
Visit macomtechasia.com for additional data sheets and product information.  
Characteristic data and specifications are subject to change without notice.  
©2010 M/A-COM Tech Asia  
XZ1002-BD  
8.5-11.0 GHz GaAs MMIC  
Core Chip  
Rev 11-Nov-10  
Core Chip Block Diagram  
Gate Bias  
TX Switch  
TX-OUT  
MPA  
Gate Bias  
AMP2  
-0.9 V  
ATT  
Common Switch  
AMP1  
0 /+3.3 V  
Digital Input  
TX/RX  
-1.0 V  
LNA  
RX-IN  
RX Switch  
-1.0 V  
Gate Bias  
Page 7 of 11  
ADVANCED: Data sheets contain information regarding a product M/A-COM Tech Asia is  
considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data sheets contain information regarding a product M/A-COM Tech Asia has  
under development. Performance is based on engineering tests. Specifications are typical.  
Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
3F, 3-2 Industry East IX Road, Science-Based Industrial Park  
Hsinchu 30075 Taiwan, R.O.C  
Tel +886-3-567-9680 / Fax +886-3-567-9433  
Email mtatechnicalhelp@macomtech.com  
Visit macomtechasia.com for additional data sheets and product information.  
Characteristic data and specifications are subject to change without notice.  
©2010 M/A-COM Tech Asia  
XZ1002-BD  
8.5-11.0 GHz GaAs MMIC  
Core Chip  
Rev 11-Nov-10  
Mechanical Drawing  
5.000 (0.197)  
7
6
2
3
4
5
4.613 (0.182)  
4.051 (0.159)  
8
9
XZ1002-BD  
3.700 (0.146)  
3.550 (0.040)  
3.400 (0.134)  
10  
11  
12  
13  
14  
3.250 (0.128)  
3.100 (0.122)  
2.950 (0.116)  
2.800 (0.110)  
2.650 (0.104)  
2.500 (0.098)  
2.350 (0.093)  
2.200 (0.087)  
2.050 (0.081)  
1.900 (0.075)  
1.750 (0.069)  
1.600 (0.063)  
1.450 (0.057)  
1.300 (0.051)  
15  
16  
17  
18  
19  
20  
21  
22  
23  
2.500 (0.098)  
1
24  
25  
26  
1.006 (0.040)  
27  
28  
0.500 (0.020)  
32  
31 30  
29  
0.000 (0.000)  
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.  
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold  
All Bond Pads are 0.100 x 0.100 (0.004 x 0.004).  
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.  
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 12.4 mg.  
Page 8 of 11  
ADVANCED: Data sheets contain information regarding a product M/A-COM Tech Asia is  
considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data sheets contain information regarding a product M/A-COM Tech Asia has  
under development. Performance is based on engineering tests. Specifications are typical.  
Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
3F, 3-2 Industry East IX Road, Science-Based Industrial Park  
Hsinchu 30075 Taiwan, R.O.C  
Tel +886-3-567-9680 / Fax +886-3-567-9433  
Email mtatechnicalhelp@macomtech.com  
Visit macomtechasia.com for additional data sheets and product information.  
Characteristic data and specifications are subject to change without notice.  
©2010 M/A-COM Tech Asia  
XZ1002-BD  
8.5-11.0 GHz GaAs MMIC  
Core Chip  
Rev 11-Nov-10  
Bond Pad Designations  
Pad # Pad ID  
Voltage  
[VDC]  
Description  
Pad # Pad ID  
Voltage  
[VDC]  
Description  
17  
18  
19  
20  
21  
22  
23  
P5  
P2  
P4  
P3  
P1  
0 / +3.3  
0 / +3.3  
0 / +3.3  
0 / +3.3  
0 / +3.3  
0 / +3.3  
180° Phase Bit  
22.5° Phase Bit  
90° Phase Bit  
45° Phase Bit  
11.25° Phase Bit  
5.625° Phase Bit  
P0 Voltage Monitor -  
Not Connected  
P0 Voltage Monitor -  
Not Connected  
Gate Bias  
1
2
3
4
5
TX/RX  
Vd2  
Vs1  
GND  
RX Qnot  
RF  
+4.0  
-5.0  
-
-3.4  
(RX Mode)  
0 / +4.0  
TX input / RX output  
Interstage Amp Supply  
Gate Bias  
Decoupling Ground  
RF Switch Monitor -  
Not Connected  
Output PA Supply  
Decoupling Ground  
Transmit [TX] Output  
Decoupling Ground  
0.9 dB Atten Bit  
7.2 dB Atten Bit  
14.4 dB Atten Bit  
3.6 dB Atten Bit  
1.8 dB Atten Bit  
RX/TX Switch  
P0  
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
Vd3  
GND  
TXOUT  
GND  
A0  
A3  
A4  
A2  
A1  
Qnot P0  
0
-
RF  
-
(Ref State)  
-3.4  
24  
Q P0  
(Ref State)  
-5.0  
+3.3  
-
RF  
-5.0  
+4.0  
-
25  
26  
27  
28  
29  
30  
31  
32  
Vs2  
V3  
GND  
RXIN  
Vs3  
Vd4  
GND  
Vd1  
0 / +3.3  
0 / +3.3  
0 / +3.3  
0 / +3.3  
0 / +3.3  
0 / +3.3  
-
On-Chip Pull-Up  
Decoupling Ground  
Receive [RX] Input  
Gate Bias  
Interstage Amp Supply  
Decoupling Ground  
LNA Supply  
RX  
GND  
Digital Ground  
Cross Talk Suppression  
0 / +4.0  
App Note [1] Wire Bonding - Bond wires need to be as short as possible. The device is designed for a total bond wire  
inductance of 130 pH/RF bond pad. Different bond wire inductance will result in degraded performance.  
Page 9 of 11  
ADVANCED: Data sheets contain information regarding a product M/A-COM Tech Asia is  
considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data sheets contain information regarding a product M/A-COM Tech Asia has  
under development. Performance is based on engineering tests. Specifications are typical.  
Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
3F, 3-2 Industry East IX Road, Science-Based Industrial Park  
Hsinchu 30075 Taiwan, R.O.C  
Tel +886-3-567-9680 / Fax +886-3-567-9433  
Email mtatechnicalhelp@macomtech.com  
Visit macomtechasia.com for additional data sheets and product information.  
Characteristic data and specifications are subject to change without notice.  
©2010 M/A-COM Tech Asia  
XZ1002-BD  
8.5-11.0 GHz GaAs MMIC  
Core Chip  
Rev 11-Nov-10  
App Note [2] Biasing - The core chip can be operated in either Transmit [TX] or Receive [RX] mode. The bias setup is slightly  
different for each.  
TX Mode - The TX mode is activated by setting the TX/RX switch, bond pad 15 (RX), to logic high (+3.3V) Vrx=3.3V. In this mode,  
bond pad 6 (Vd3) for biasing the output power amplifier (MPA) must be set to Vd3=4V. Additionally, the LNA is not operational in  
this [TX] mode so Vd1=0V.  
RX Mode - To select the RX mode of operation the TX/RX switch, again bond pad 15 (RX), is set to logic low (0V) Vrx=0V. In this  
mode bond pad 32 (Vd1) for biasing the Low Noise Amplifier stage (LNA) must be set to Vd1=4V. In the RX mode the MPA is not  
used and must be set to Vd3=0V.  
TX/RX Modes - Both the gate bias circuitry (Vs1,2,3) and the interstage amplifiers (Vd2,4) must be biased at Vs(1,2,3)=-5V and  
Vd(2,4)=4V respectively in both TX and RX operation.  
CAUTION! - Also, make sure to properly sequence the applied voltages to ensure negative gate bias (Vs1,2,3) is available before  
applying the positive drain supply (Vd1,2,3,4).  
App Note [3] Attenuator / Phase Shifter Control Bias - Logic buffering is integrated in the device to supply the necessary  
internal switching voltages. The reference state is enabled with logic "low" on all inputs, and the binary weighted phase(amplitude)  
states are switched by a logic "high" on the respective control input. Amplitude(phase) variation between phase(amplitude) states  
is minimized by optimization of internal matching and isolation between bits. Each bit is controlled using a ‘0’ for the reference  
state and a ‘1’ for the enabled state.  
Atten Level  
Phase Shift  
(degrees)  
0º  
5.625º  
11.25º  
22.5º  
45º  
90º  
180º  
354.375º  
Va0 Va1 Va2 Va3 Va4  
Vp0 Vp1 Vp2 Vp3  
Vp4 Vp5  
(dB)  
0
0
1
0
0
0
0
-
0
0
1
0
0
0
-
0
0
0
1
0
0
-
0
0
0
0
1
0
-
0
0
0
0
0
1
-
0
1
0
0
0
0
0
1
0
0
1
0
0
0
0
1
0
0
0
1
0
0
0
1
0
0
0
0
1
0
0
1
0
0
0
0
0
1
0
1
0
0
0
0
0
0
1
1
0.9  
1.8  
3.6  
7.2  
14.4  
-
27.9  
1
1
1
1
1
App Note [4] Bias Arrangement - Each DC Bias pad (Vd1,2,3,4) needs to have DC bypass capacitance (~80-120 pF) as close  
to the device as possible.  
MTTF Graphs  
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.  
TX mode  
RX mode  
2E11  
1E11  
2E11  
1E11  
1E10  
1E9  
1E10  
1E9  
m12  
m11  
1E8  
1E8  
10  
20  
30  
40  
50  
60  
10  
20  
30  
40  
50  
60  
Temperature [C]  
Temperature [C]  
m11  
m12  
temp=60.000  
MTTF_MFC_TX=1.461E8  
Pavs=-30.000000, RFfreq=12.000000  
temp= 60.000  
MTTF_MFC_RX=1.521E8  
Pavs=-30.000000, RFfreq=12.000000  
Page 10 of 11  
ADVANCED: Data sheets contain information regarding a product M/A-COM Tech Asia is  
3F, 3-2 Industry East IX Road, Science-Based Industrial Park  
Hsinchu 30075 Taiwan, R.O.C  
Tel +886-3-567-9680 / Fax +886-3-567-9433  
Email mtatechnicalhelp@macomtech.com  
Visit macomtechasia.com for additional data sheets and product information.  
Characteristic data and specifications are subject to change without notice.  
©2010 M/A-COM Tech Asia  
considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data sheets contain information regarding a product M/A-COM Tech Asia has  
under development. Performance is based on engineering tests. Specifications are typical.  
Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
XZ1002-BD  
8.5-11.0 GHz GaAs MMIC  
Core Chip  
Rev 11-Nov-10  
Handling and Assembly Information  
CAUTION! - M/A-COM Tech Asia MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the  
environment. For safety, observe the following procedures:  
• Do not ingest.  
• Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products  
are dangerous to the human body if inhaled, ingested, or swallowed.  
• Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with  
methods specified by applicable hazardous waste procedures.  
Life Support Policy - M/A-COM Tech Asia's products are not authorized for use as critical components in life support devices or systems  
without the express written approval of the President and General Counsel of M/A-COM Tech Asia. As used herein: (1) Life support devices or  
systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to  
perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a  
significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.  
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in anti-static containers, which  
should be opened in cleanroom conditions at an appropriately grounded antistatic workstation. Devices need careful handling using correctly  
designed collets, vacuum pickups or, with care, sharp tweezers.  
Die Attachment - GaAs Products from M/A-COM Tech Asia are 0.100 mm (0.004") thick and have vias through to the backside to enable  
grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat.  
If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or DM6030HK-Pt cured in a nitrogen atmosphere  
per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible  
around the total die periphery. For additional information please see the M/A-COM Tech Asia "Epoxy Specifications for Bare Die" application  
note. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.0012 thick, placed between the die and the  
attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent  
void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280º C  
(Note: Gold Germanium should be avoided). The work station temperature should be 310ºC +/- 10º C. Exposure to these extreme  
temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of  
air bridges and force impact are critical during placement.  
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The  
recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to  
minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum  
wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic  
content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the  
die to the package or substrate. All bonds should be as short as possible.  
Ordering Information  
Part Number for Ordering  
XZ1002-BD-000V  
Description  
RoHS compliant die packed in vacuum release gel paks  
XZ1002-BD Evaluation Module with bias and digital control under software control  
XZ1002-BD-EV1  
Caution: ESD Sensitive  
Appropriate precautions in handling, packaging  
and testing devices must be observed.  
Proper ESD procedures should be followed when handling this device.  
Page 11 of 11  
ADVANCED: Data sheets contain information regarding a product M/A-COM Tech Asia is  
considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data sheets contain information regarding a product M/A-COM Tech Asia has  
under development. Performance is based on engineering tests. Specifications are typical.  
Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
3F, 3-2 Industry East IX Road, Science-Based Industrial Park  
Hsinchu 30075 Taiwan, R.O.C  
Tel +886-3-567-9680 / Fax +886-3-567-9433  
Email mtatechnicalhelp@macomtech.com  
Visit macomtechasia.com for additional data sheets and product information.  
Characteristic data and specifications are subject to change without notice.  
©2010 M/A-COM Tech Asia  
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