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VVZB120-16IOX

型号：

VVZB120-16IOX

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

268 K

下载PDF手册
VVZB120-16ioX  
3~  
Rectifier  
Brake  
Chopper  
Thyristor Module  
VRRM  
VCES  
= 1200  
= 1600  
IDAV  
180  
700  
IC25  
180  
1.7  
=
=
=
=
IFSM  
VCE(sat)  
3~ Rectifier Bridge, half-controlled (high-side) + Brake Unit  
Part number  
VVZB120-16ioX  
Backside: isolated  
O1  
S1  
E1  
I1  
M1  
W1  
L7  
G7  
C7  
O10  
W10  
V2-Pack  
Features / Advantages:  
Applications:  
Package:  
● Package with DCB ceramic base plate  
● Improved temperature and power cycling  
● Planar passivated chips  
● 3~ Rectifier with brake unit  
for drive inverters  
● Isolation Voltage:  
● Industry standard outline  
● RoHS compliant  
V~  
3600  
● Very low forward voltage drop  
● Very low leakage current  
● Soldering pins for PCB mounting  
● Height: 17 mm  
● X2PT - 2nd generation Xtreme light Punch Through  
● Rugged X2PT design results in:  
- short circuit rated for 10 µsec.  
- very low gate charge  
● Base plate: DCB ceramic  
● Reduced weight  
● Advanced power cycling  
- low EMI  
- square RBSOA @ 2x Ic  
● Thin wafer technology combined with X2PT design  
results in a competitive low VCE(sat) and low  
thermal resistance  
Terms and Conditions of Usage  
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and  
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The  
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns  
the specific application of your product, please contact your local sales office.  
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.  
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend  
- to perform joint risk and quality assessments;  
- the conclusion of quality agreements;  
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20170405f  
© 2017 IXYS all rights reserved  
VVZB120-16ioX  
Ratings  
Rectifier  
Symbol  
VRSM/DSM  
Definition  
Conditions  
min. typ. max. Unit  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 150°C  
TVJ = 25°C  
1700  
1600  
50  
V
V
max. non-repetitive reverse/forward blocking voltage  
max. repetitive reverse/forward blocking voltage  
VRRM/DRM  
IR/D  
VR/D =1600 V  
VR/D =1600 V  
IT = 60 A  
IT = 180 A  
IT = 60 A  
IT = 180 A  
TC = 85°C  
rectangular  
µA  
reverse current, drain current  
20 mA  
forward voltage drop  
1.27  
V
V
V
V
A
VT  
1.90  
1.25  
2.04  
180  
TVJ  
=
°C  
125  
bridge output current  
threshold voltage  
TVJ = 150°C  
TVJ = 150°C  
IDAV  
d = ⅓  
0.83  
V
VT0  
for power loss calculation only  
slope resistance  
6.9 mΩ  
0.5 K/W  
K/W  
rT  
RthJC  
RthCH  
Ptot  
ITSM  
thermal resistance junction to case  
thermal resistance case to heatsink  
0.100  
TC = 25°C  
TVJ = 45°C  
VR = 0 V  
250  
700  
755  
595  
645  
W
A
A
A
A
total power dissipation  
max. forward surge current  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
VR = 400V f = 1 MHz  
tP = 30 µs  
TVJ = 150°C  
VR = 0 V  
value for fusing  
TVJ = 45°C  
VR = 0 V  
I²t  
2.45 kA²s  
2.37 kA²s  
1.77 kA²s  
1.73 kA²s  
pF  
TVJ = 150°C  
VR = 0 V  
junction capacitance  
TVJ = 25°C  
TC = 150°C  
54  
CJ  
10  
5
W
W
W
PGM  
max. gate power dissipation  
tP = 300 µs  
0.5  
PGAV  
average gate power dissipation  
critical rate of rise of current  
TVJ = 150°C; f = 50 Hz  
repetitive, IT = 180 A  
150 A/µs  
(di/dt)cr  
0.45  
tP = 200 µs;diG /dt =  
A/µs;  
IG = 0.45A; V = ⅔ VDRM  
V = ⅔ VDRM  
non-repet., IT = 60 A  
TVJ = 150°C  
500 A/µs  
critical rate of rise of voltage  
gate trigger voltage  
1000 V/µs  
(dv/dt)cr  
VGT  
RGK = ∞; method 1 (linear voltage rise)  
VD = 6 V  
TVJ = 25°C  
TVJ = -40°C  
TVJ = 25°C  
TVJ = -40°C  
TVJ = 150°C  
1.5  
1.6  
V
V
gate trigger current  
VD = 6 V  
95 mA  
IGT  
200 mA  
gate non-trigger voltage  
gate non-trigger current  
latching current  
VD = ⅔ VDRM  
0.2  
V
VGD  
IGD  
IL  
10 mA  
tp = 10 µs  
TVJ = 25°C  
450 mA  
IG = 0.45A; diG/dt = 0.45 A/µs  
VD = 6 V RGK = ∞  
holding current  
TVJ = 25°C  
TVJ = 25°C  
200 mA  
IH  
gate controlled delay time  
VD = ½ V  
2
µs  
tgd  
DRM  
IG = 0.45A; diG/dt = 0.45 A/µs  
turn-off time  
VR = 100 V; IT = 60 A; V = ⅔ VDRM TVJ =125 °C  
di/dt = 10 A/µs dv/dt = 20 V/µs µs  
150  
µs  
tq  
tp = 200  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20170405f  
© 2017 IXYS all rights reserved  
VVZB120-16ioX  
Ratings  
Brake IGBT + Diode  
Symbol  
VCES  
Definition  
Conditions  
min. typ. max. Unit  
collector emitter voltage  
TVJ  
=
25°C  
1200  
20  
V
V
max. DC gate voltage  
VGES  
VGEM  
IC25  
max. transient gate emitter voltage  
collector current  
30  
V
TC = 25°C  
TC = 80°C  
TC = 25°C  
TVJ = 25°C  
TVJ = 125°C  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 125°C  
180  
140  
500  
2.1  
A
A
IC80  
total power dissipation  
W
V
P
tot  
collector emitter saturation voltage  
IC = 100 A; VGE = 15 V  
1.7  
1.9  
6.8  
VCE(sat)  
V
gate emitter threshold voltage  
collector emitter leakage current  
IC = 4 mA; VGE = VCE  
VCE = VCES; VGE = 0 V  
6
7.5  
V
VGE(th)  
ICES  
0.1 mA  
mA  
0.1  
gate emitter leakage current  
total gate charge  
VGE = 20 V  
500  
nA  
nC  
ns  
IGES  
VCE = 600 V; V = 15 V; IC =100 A  
GE  
340  
230  
70  
QG(on)  
td(on)  
tr  
turn-on delay time  
current rise time  
ns  
inductive load  
TVJ = 125°C  
turn-off delay time  
380  
230  
12.5  
11.5  
ns  
td(off)  
tf  
VCE =600 V; IC = 100 A  
VGE = 15 V; RG = 6.8 Ω  
current fall time  
ns  
turn-on energy per pulse  
turn-off energy per pulse  
reverse bias safe operating area  
mJ  
mJ  
Eon  
Eoff  
VGE = 15 V; RG = 6.8 Ω  
TVJ = 125°C  
TVJ = 125°C  
RBSOA  
ICM  
VCEK = 1200 V  
300  
10  
A
short circuit safe operating area  
short circuit duration  
SCSOA  
tSC  
VCEK = 1200 V  
VCE = 720 V; V = 15 V  
GE  
µs  
A
short circuit current  
RG = 6.8Ω; non-repetitive  
450  
ISC  
thermal resistance junction to case  
thermal resistance case to heatsink  
0.25 K/W  
K/W  
RthJC  
RthCH  
0.10  
Brake Diode  
max. repetitive reverse voltage  
TVJ = 25°C  
TC = 25°C  
1200  
48  
V
A
A
V
V
VRRM  
IF25  
IF80  
VF  
forward current  
forward voltage  
reverse current  
32  
TC = 80°C  
TVJ = 25°C  
TVJ = 125°C  
TVJ = 25°C  
TVJ = 125°C  
IF = 30 A  
2.75  
1.60  
V = VRRM  
R
0.25 mA  
IR  
1
mA  
µC  
A
reverse recovery charge  
VR = 600 V  
-diF /dt = 1000A/µs  
IF = 30A  
5.2  
50  
Qrr  
max. reverse recovery current  
reverse recovery time  
TVJ = 125°C  
IRM  
300  
1.9  
ns  
trr  
reverse recovery energy  
mJ  
Erec  
RthJC  
RthCH  
thermal resistance junction to case  
thermal resistance case to heatsink  
0.9 K/W  
K/W  
0.3  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20170405f  
© 2017 IXYS all rights reserved  
VVZB120-16ioX  
Ratings  
Package V2-Pack  
Symbol  
IRMS  
Definition  
Conditions  
min. typ. max. Unit  
per terminal  
100  
150  
125  
125  
A
°C  
°C  
°C  
g
RMS current  
-40  
-40  
-40  
TVJ  
virtual junction temperature  
Top  
operation temperature  
storage temperature  
Tstg  
76  
Weight  
MD  
2
2.5 Nm  
mounting torque  
terminal to terminal  
terminal to backside  
6.0  
12.0  
mm  
mm  
V
dSpp/App  
dSpb/Apb  
creepage distance on surface | striking distance through air  
t = 1 second  
3600  
3000  
V
isolation voltage  
ISOL  
50/60 Hz, RMS; IISOL ≤ 1 mA  
t = 1 minute  
V
Data Matrix: Typ (1-19), DC+Prod.Index (20-25), FKT# (26-31)  
leer (33), lfd.# (33-36)  
yywwAA  
Part Number  
Lot.No: xxxxxx  
UL Date code Prod. Index  
Ordering  
Ordering Number  
Marking on Product  
VVZB120-16ioX  
Delivery Mode  
Quantity Code No.  
511152  
Standard  
VVZB120-16ioX  
Box  
6
TVJ = 150°C  
Equivalent Circuits for Simulation  
* on die level  
Thyristor  
Brake  
Diode  
V0  
I
R0  
threshold voltage  
slope resistance *  
0.83  
3.7  
1.31  
8
V
V0 max  
R0 max  
mΩ  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20170405f  
© 2017 IXYS all rights reserved  
VVZB120-16ioX  
Outlines V2-Pack  
Remarks:  
Detail Y  
M 5:1  
Detail X  
M 2:1  
EJOT PT® self-tapping screws of the dimension K25 are  
recommended for the mechanical connection between module  
and PCB. Choose the right length according to your board  
thickness at a maximum depth of 6 mm of the module holes.  
The recommended mounting torque is 1.5 Nm.  
Ø1.5 (DIN 46 431)  
ꢀ
Ø 6.1  
Ø 2.5  
£0.5 0.2  
Ø 2.1  
65  
93  
38  
40.4  
0.3  
78.5  
24.2 0.3  
16.6 0.3  
11.7 0.3  
7.1 0.3  
28.8 0.3  
16.8 0.3  
0.3  
9.8  
0.3  
4x45°  
2.4  
0.8 0.3  
R1  
1
2
3
1
2
3
4
5
6
7
4
5
6
7
8
9
8
9
10  
10  
0.15  
40  
80 0.3  
0.5  
Marking  
O1  
S1  
E1  
I1  
M1  
W1  
L7  
G7  
C7  
O10  
W10  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20170405f  
© 2017 IXYS all rights reserved  
VVZB120-16ioX  
Thyristor  
200  
600  
500  
400  
300  
200  
3000  
2500  
2000  
1500  
TVJ = 125°C  
TVJ 25°C  
=
150  
TVJ = 45°C  
TVJ= 45°C  
I2t  
IF  
IFSM  
[A]  
100  
TVJ = 150°C  
[A2s]  
1000  
[A]  
TVJ= 150°C  
50  
500  
0
50Hz, 80% VRRM  
0
1
2
3
4 5 6 7 8 9  
0.0  
0.5  
1.0  
1.5  
2.0  
0.001  
0.01  
0.1  
1
VF [V]  
t [s]  
t [ms]  
Fig. 3 I2t vs. time per thyristor  
Fig. 1 Forward current vs.  
voltage drop per thyristor  
Fig. 2 Surge overload current  
vs. time per thyristor  
10  
1000  
100  
160  
140  
120  
100  
T
VJ = 25°C  
1: IGT  
T
VJ = 125°C  
,
2: IGT, TVJ  
= 25°C  
DC =  
1
3: IGT, TVJ = -40°C  
0.5  
typ.  
Limit  
0.4  
0.33  
0.17  
0.08  
6
IT(AV)M  
VG  
[V]  
tgd  
5
1
80  
60  
40  
20  
0
[μs]  
[A]  
4
3
2
10  
1
4: PGAV = 0.5 W  
5: PGM  
6: PGM  
=
=
5 W  
IGD  
T
= 125°C  
4
,
10 W  
0.1  
100  
1
10  
101  
102  
103  
104  
100  
1000  
0
50  
100  
TC [°C]  
Fig. 5 Max. forward current vs.  
case temperature per thyristor  
150  
IG [mA]  
IG [mA]  
Fig. 4 Gate trigger characteristics  
Fig. 5 Gate trigger delay time  
0.6  
DC =  
1
RthA  
:
120  
100  
0.2 K/W  
0.4 K/W  
0.6 K/W  
0.8 K/W  
1.0 K/W  
2.0 K/W  
0.5  
0.5  
0.4  
0.33  
0.17  
0.4  
80 0.08  
ZthJC  
0.3  
[K/W]  
Constants for ZthJC calc.:  
Ptot  
[W]  
60  
40  
20  
0
i
Rth (K/W)  
ti (s)  
0.2  
0.1  
0.0  
1
2
3
4
5
0.040  
0.003  
0.140  
0.120  
0.197  
0.004  
0.010  
0.030  
0.300  
0.080  
0
20  
40  
60  
80  
0
50  
100  
150  
1
10  
100  
t [ms]  
1000  
10000  
IT(AV)M [A]  
Tamb [°C]  
Fig. 4 Power dissipation vs. forward current  
and ambient temperature per thyristor  
Fig. 6 Transient thermal impedance junction to case  
vs. time per thyristor  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20170405f  
© 2017 IXYS all rights reserved  
VVZB120-16ioX  
Brake IGBT + Diode  
200  
150  
100  
200  
200  
150  
100  
50  
VGE = 19 V  
17 V  
13 V  
VCE = 20 V  
15 V  
150  
25°C  
11 V  
IC  
IC  
125°C  
TVJ = 150°C  
IC  
[A]  
100  
[A]  
[A]  
125°C  
25°C  
50  
0
50  
9 V  
0
0
6
7
8
9
10 11 12 13  
0.0 0.5 1.0 1.5 2.0 2.5 3.0  
0
1
2
3
4
VCE [V]  
VCE [V]  
VGE [V]  
Fig. 3 Typ. transfer charact.  
IGBT  
Fig.1 Output characteristics IGBT  
Fig.2 Typ. output characteristics  
IGBT  
60  
50  
40  
30  
20  
10  
0
40  
30  
400  
50  
40  
500  
RG = 6.8  
RG = 6.8  
VCE = 600 V  
VCE = 600 V  
VGE  
= 15 V  
VGE  
= 15 V  
TVJ = 125°C  
TVJ = 125°C  
400  
300  
td(off)  
Eoff  
30  
t
td(on)  
300  
Eon  
20  
[mJ]  
tr  
200  
IF  
[A]  
[ns]  
[mJ]  
20  
tf  
[ns]  
200  
100  
0
125°C  
tr  
10  
100  
10  
0
25°C  
Eoff  
Eon  
0
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
0
50  
100  
150  
200  
0
50  
100  
150  
200  
IC [A]  
IC [A]  
VF [V]  
Fig. 6 Typ. forward characteristics  
Diode  
Fig. 4 Typ. turn-on energy & switch.  
times vs. collector current  
Fig. 5 Typ. turn-off energy & switch.  
times vs. collector current  
1
8
6
4
2
0
80  
2.5  
125  
RG = 6.8  
TVJ = 125°C  
Diode  
VR = 600 V  
VR = 600 V  
TVJ = 125°C  
IF  
=
30 A  
Erec  
2.0  
Erec  
1.5  
100  
75  
Irr  
60  
IGBT  
Erec  
ZthJC  
0.1  
[K/W]  
Irr  
40  
[A]  
[mJ]  
Irr  
[mJ]  
1.0  
50  
Irr  
[A]  
IGBT  
Diode  
ti  
20  
R
t
i
Ri  
i
0.5  
0.0  
25  
0
0.050 0.0010  
0.035 0.0100  
0.365 0.0050  
0.180 0.0003  
0.120 0.0300 0.255 0.0397  
0.045 0.0800  
Erec  
0.100 0.1000  
0.01  
0.001  
0
0.01  
0.1  
1
0
10 20 30 40 50 60  
4
8
12  
16  
20  
24  
IF [A]  
RG [Ohm]  
t [s]  
Fig. 9 Transient thermal  
resistance junction to case  
Fig. 8 Typ. reverse recovery  
characteristics Diode  
Fig. 7 Typ. reverse recovery  
characteristics Diode  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20170405f  
© 2017 IXYS all rights reserved  
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