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IXTN17N120L

型号：

IXTN17N120L

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

128 K

下载PDF手册
LinearTM Power MOSFET  
w/ Extended FBSOA  
VDSS  
ID25  
= 1200V  
= 15A  
IXTN17N120L  
D
S
RDS(on) < 900mΩ  
N-Channel Enhancement Mode  
Avalanche Rated  
Guaranteed FBSOA  
G
S
miniBLOC  
E153432  
S
G
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
1200  
1200  
V
V
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
S
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
D
G = Gate  
S = Source  
D = Drain  
ID25  
IDM  
TC = 25°C  
15  
34  
A
A
TC = 25°C, Pulse Width Limited by TJM  
Either Source Terminal S can be used as  
the Source Terminal or the Kelvin Source  
(Gate Return) Terminal.  
IA  
TC = 25°C  
TC = 25°C  
8.5  
2.5  
A
J
EAS  
PD  
TC = 25°C  
540  
W
TJ  
-55 to +150  
150  
°C  
°C  
°C  
Features  
TJM  
Tstg  
z Designed for Linear Operations  
z International Standard Package  
z Molding Epoxies Meet UL94 V-0  
Flammability Classification  
z Guaranteed FBSOA at 60ºC  
z miniBLOC with Aluminum Nitride  
Isolation  
-55 to +150  
VISOL  
50/60 Hz, RMS, t = 1minute  
2500  
3000  
V~  
V~  
IISOL ≤ 1mA,  
t = 1s  
Md  
Mounting Torque for Base Plate  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
Weight  
30  
g
z Low RDS(on) HDMOSTM Process  
z Rugged Polysilicon Gate Cell  
Structure  
z Low Package Inductance  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
(TJ = 25°C, Unless Otherwise Specified)  
Advantages  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 250μA  
VGS = ±30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
1200  
V
V
z
Easy to Mount  
Space Savings  
High Power Density  
3.0  
6.0  
z
z
±200 nA  
IDSS  
50 μA  
TJ = 125°C  
2 mA  
Applications  
RDS(on)  
VGS = 20V, ID = 8.5A, Note 1  
900 mΩ  
z Programmable Loads  
z Current Regulators  
z DC-DC Convertors  
z Battery Chargers  
z DC Choppers  
z Temperature and Lighting Controls  
DS99814C(05/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXTN17N120L  
Symbol  
Test Conditions  
Characteristic Values  
SOT-227B (IXTN) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 8.5A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
3.5  
5.0  
6.5  
S
Ciss  
Coss  
Crss  
8300  
520  
90  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
42  
31  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 15V, VDS = 0.5 • VDSS, ID = 8.5A  
110  
83  
RG = 2Ω (External)  
(M4 screws (4x) supplied)  
Qg(on)  
Qgs  
155  
41  
nC  
nC  
nC  
VGS = 15V, VDS = 0.5 • VDSS, ID = 8.5A  
Qgd  
60  
RthJC  
RthCS  
0.23 °C/W  
°C/W  
0.05  
Safe Operating Area Specification  
Symbol  
SOA  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
VDS = 800V, ID = 0.23A, TC = 60°C, tP = 3s 184  
W
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
17  
A
A
ISM  
VSD  
trr  
Repetitive, Pulse Width Limited by TJM  
50  
IF = 17A, VGS = 0V, Note 1  
1.5  
V
IF = IS, -di/dt = 100A/μs, VR = 100V  
1830  
ns  
Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463 6,771,478 B2 7,071,537  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
IXTN17N120L  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
35  
30  
25  
20  
15  
10  
5
18  
16  
14  
12  
10  
8
VGS = 20V  
14V  
VGS = 20V  
16V  
14V  
12V  
12V  
10V  
9V  
10V  
9V  
6
4
8V  
7V  
2
8V  
7V  
0
0
0
2
4
6
8
10  
12  
14  
30  
35  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 8.5A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
18  
16  
14  
12  
10  
8
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
VGS = 20V  
VGS = 20V  
14V  
12V  
10V  
I D = 17A  
I D = 8.5A  
9V  
8V  
6
4
7V  
2
6V  
5V  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
5
10  
15  
20  
25  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 8.5A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
16  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 20V  
14  
12  
10  
8
TJ = 125ºC  
6
4
TJ = 25ºC  
2
0
0
5
10  
15  
20  
25  
30  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXTN17N120L  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
20  
18  
16  
14  
12  
10  
8
9
8
7
6
5
4
3
2
1
0
T
= - 40ºC, 25ºC, 125ºC  
J
TJ = 125ºC  
25ºC  
- 40ºC  
6
4
2
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
160  
10  
4
0.4  
0
5
6
7
8
9
10  
11  
12  
1.0  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
16  
14  
12  
10  
8
VDS = 600V  
I
I
D = 8.5A  
G = 10mA  
6
TJ = 125ºC  
4
TJ = 25ºC  
2
0
0
0.5  
0.6  
0.7  
0.8  
0.9  
0
20  
40  
60  
80  
100  
120  
140  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal Impedance  
Fig. 11. Capacitance  
1
100,000  
10,000  
1,000  
100  
= 1 MHz  
f
0.1  
C
iss  
C
oss  
0.01  
0.001  
C
rss  
10  
5
10  
15  
20  
25  
30  
35  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
VDS - Volts  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTN17N120L  
Fig. 13. Forward-Bias Safe Operating Area  
@ TC = 25ºC  
Fig. 14. Forward-Bias Safe Operating Area  
@ TC = 60ºC  
100  
10  
1
100  
10  
1
R
Limit  
R
Limit  
DS(on)  
DS(on)  
25µs  
100µs  
25µs  
100µs  
1ms  
1ms  
10ms  
10ms  
TJ = 150ºC  
TJ = 150ºC  
100ms  
TC = 25ºC  
DC  
100ms  
TC = 60ºC  
DC  
Single Pulse  
Single Pulse  
0.1  
0.1  
10  
100  
1000  
10000  
10  
100  
1000  
10000  
VDS - Volts  
VDS - Volts  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXYS REF: IXT_17N120L (8N)02-18-09-B  
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