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IXTA4N60P

型号：

IXTA4N60P

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

134 K

下载PDF手册
Advance Technical Information  
PolarHVTM  
Power MOSFET  
IXTA 4N60P  
IXTP 4N60P  
IXTY 4N60P  
VDSS = 600 V  
ID25  
=
4 A  
1.9 Ω  
RDS(on)  
≤
N-Channel Enhancement Mode  
TO-220 (IXTP)  
(TAB)  
G
D
S
Symbol  
VDSS  
VDGR  
TestConditions  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
Maximum Ratings  
TO-263 (IXTA)  
600  
V
600  
V
VGSS  
VGSM  
30  
40  
V
V
G
S
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
4
10  
A
A
(TAB)  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
IAR  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
TC = 25°C  
4
10  
300  
A
mJ  
mJ  
TO-252 AA (IXTY)  
dv/dt  
PD  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 18 Ω  
,
10  
V/ns  
TC = 25°C  
86  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
TL  
1.6 mm (0.062 in.) from case for 10 s  
Maximum tab temperature for soldering  
TO-263 package for 10s  
300  
260  
°C  
°C  
z International standard packages  
z Unclamped Inductive Switching (UIS)  
rated  
z Low package inductance  
- easy to drive and to protect  
Md  
Mounting torque  
(TO-220)  
1.13/10 Nm/lb.in.  
Weight  
TO-220  
TO-263  
TO-252  
4
3
0.8  
g
g
g
Advantages  
Symbol  
TestConditions  
Characteristic Values  
z
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
Easy to mount  
z
Space savings  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250µA  
VGS = 30 VDC, VDS = 0  
600  
V
V
z
High power density  
3.5  
5.5  
100  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
1
µA  
µA  
TJ = 125°C  
50  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
1.9  
Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
DS99423(09/05)  
© 2005 IXYS All rights reserved  
IXTA 4N60P IXTP 4N60P  
IXTY 4N60P  
TO-263 (IXTA) Outline  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
VDS= 10 V; ID = 0.5 ID25, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
2.2  
4.6  
S
Ciss  
Coss  
Crss  
635  
65  
pF  
pF  
pF  
5.7  
td(on)  
tr  
td(off)  
tf  
25  
10  
50  
20  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25  
RG = 18 Ω (External)  
Qg(on)  
Qgs  
13.0  
6.0  
nC  
nC  
nC  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
A
A1  
4.06  
2.03  
4.83  
2.79  
.160  
.080  
.190  
.110  
Qgd  
4.0  
b
b2  
0.51  
1.14  
0.99  
1.40  
.020  
.045  
.039  
.055  
RthJC  
RthCK  
1.45 K/W  
K/W  
c
c2  
0.46  
1.14  
0.74  
1.40  
.018  
.045  
.029  
.055  
(TO-220)  
0.25  
D
D1  
8.64  
7.11  
9.65  
8.13  
.340  
.280  
.380  
.320  
E
E1  
e
9.65  
6.86  
2.54  
10.29  
8.13  
BSC  
.380  
.270  
.100  
.405  
.320  
BSC  
Source-Drain Diode  
Characteristic Values  
L
14.61  
2.29  
1.02  
1.27  
0
15.88  
2.79  
1.40  
1.78  
0.38  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.015  
L1  
L2  
L3  
L4  
(TJ = 25°C unless otherwise specified)  
Symbol  
IS  
TestConditions  
Min.  
Typ.  
Max.  
R
0.46  
0.74  
.018  
.029  
VGS = 0 V  
4
A
A
V
ISM  
Repetitive  
16  
TO-220 (IXTP) Outline  
VSD  
IF = IS, VGS = 0 V,  
1.5  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
trr  
IF = 4 A  
600  
ns  
-di/dt = 100 A/µs  
TO-252 AA Outline  
Dim. Millimeter  
Min. Max.  
Inches  
Min.  
Max.  
A
A1  
2.19  
0.89  
2.38  
1.14  
0.086  
0.035  
0.094  
0.045  
A2  
b
0
0.64  
0.13  
0.89  
0
0.005  
0.035  
0.025  
Pins: 1 - Gate  
2 - Drain  
b1  
b2  
0.76  
5.21  
1.14  
5.46  
0.030  
0.205  
0.045  
0.215  
c
c1  
0.46  
0.46  
0.58  
0.58  
0.018  
0.018  
0.023  
0.023  
D
D1  
5.97  
4.32  
6.22  
5.21  
0.235  
0.170  
0.245  
0.205  
E
E1  
6.35  
4.32  
6.73  
5.21  
0.250  
0.170  
0.265  
0.205  
e
e1  
2.28BSC  
4.57BSC  
0.090BSC  
0.180BSC  
H
L
9.40 10.42  
0.370  
0.020  
0.410  
0.040  
0.51  
1.02  
L1  
L2  
L3  
0.64  
0.89  
2.54  
1.02  
1.27  
2.92  
0.025  
0.035  
0.100  
0.040  
0.050  
0.115  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
IXTA 4N60P IXTP 4N60P  
IXTY 4N60P  
Fig. 2. Extended Output Characteristics  
Fig. 1. Output Characteristics  
C
@ 25  
º
@ 25 C  
º
4
3.5  
3
8
7
6
5
4
3
2
1
0
V
= 10V  
8V  
GS  
V
= 10V  
8V  
GS  
7V  
2.5  
2
7V  
1.5  
1
6V  
6
0.5  
0
6V  
0
1
2
3
4
5
7
8
9
10  
0
3
6
9
12 15 18 21 24 27 30  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
º
@ 125 C  
Fig. 4. RDS(on Normalized to 0.5 ID25  
)
Value vs. Junction Temperature  
4
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
V
= 10V  
8V  
GS  
V
= 10V  
GS  
3.5  
3
7V  
2.5  
2
6V  
5V  
I
= 4A  
D
1.5  
1
I
= 2A  
D
0.5  
0
0.7  
0.4  
0
2
4
6
8
10 12 14 16 18 20  
-50  
-25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to  
0.5 ID25 Value vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
4.5  
4
3
2.8  
2.6  
2.4  
2.2  
2
V
= 10V  
GS  
T = 125 C  
∫
J
3.5  
3
2.5  
2
1.8  
1.6  
1.4  
1.2  
1
1.5  
1
T = 25  
J
∫
C
7
0.5  
0
0.8  
0
1
2
3
I D - Amperes  
4
5
6
8
-50  
-25  
0
25  
50  
75  
100 125 150  
TC - Degrees Centigrade  
© 2005 IXYS All rights reserved  
IXTA 4N60P IXTP 4N60P  
IXTA 4N60P IXTY 4N60P  
IXTY 4N60P  
IXTP 4N60P  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
6
5.4  
4.8  
4.2  
3.6  
3
10  
9
8
7
6
5
4
3
2
1
0
T = -40 C  
∫
J
∫
25 C  
125  
∫
C
2.4  
1.8  
1.2  
0.6  
0
T =125 C  
∫
J
∫
25 C  
∫
-40 C  
4
0.4  
0
4.5  
5
5.5  
6
6.5  
7
7.5  
0
1
2
3
4
5
6
7
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
14  
12  
10  
8
10  
9
8
7
6
5
4
3
2
1
0
V
= 300V  
DS  
I
I
= 2A  
D
G
= 10mA  
6
T = 125 C  
∫
J
4
T = 25 C  
∫
J
2
0
0.5  
0.6  
0.7  
0.8  
0.9  
1
0
2
4
6
8
10  
12  
14  
VS D - Volts  
Q G - nanoCoulombs  
Fig. 13. Maximum Transient Thermal  
Resistance  
Fig. 11. Capacitance  
10000  
1000  
100  
10  
10.00  
1.00  
0.10  
0.01  
f = 1MHz  
C
C
iss  
oss  
C
rss  
1
5
10  
15  
20  
25  
30  
35  
40  
0.01  
0.1  
1
10  
100  
1000  
VD S - Volts  
Pulse Width - milliseconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTA 4N60P IXTP 4N60P  
IXTY 4N60P  
Fig. 13. Maximum Transient Thermal Resistance  
10.0  
1.0  
0.1  
0.1  
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2005 IXYS All rights reserved  
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