IXTA 7N60P
IXTP 7N60P
Symbol
gfs
Test Conditions
Characteristic Values
TO-220 (IXTP) Outline
(TJ = 25° C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
4
7
S
Ciss
Coss
Crss
1080
110
11
pF
pF
pF
td(on)
tr
td(off)
tf
20
27
65
26
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
RG = 18 Ω (External)
Pins: 1 - Gate
2 - Drain
Qg(on)
Qgs
20
7
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
7
RthJC
RthCS
0.83 ° C/W
° C/W
(TO-220)
0.25
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
VGS = 0 V
Repetitive
7
A
A
V
TO-263 (IXTA) Outline
ISM
14
VSD
IF = IS, VGS = 0 V,
1.5
Pulse test, t ≤300 µs, duty cycle d≤ 2 %
trr
IF = 7 A, VGS = 0 V
500
ns
-di/dt = 100 A/µs, VR = 100 V
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380
.270
.100 BSC
.405
.320
L
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
L1
L2
L3
L4
R
0.46
0.74
.018
.029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405B2 6,759,692
6,710,463 6,771,478 B2
