IXTA05N100P
IXTP05N100P
Symbol
Test Conditions
Characteristic Values
TO-263 Outline
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 30V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
0.24
0.40
S
Ciss
Coss
Crss
196
15
4
pF
pF
pF
td(on)
tr
td(off)
tf
6
15
20
15
ns
ns
ns
ns
Resistive Switching Times
V
GS = 10V, VDS = 50V, ID = 0.5 • ID25
RG = 30Ω (External)
Qg(on)
Qgs
8.1
0.7
4.2
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
RthCS
2.5 °C/W
°C/W
TO-220
0.50
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
0.5
A
A
TO-220 Outline
ISM
VSD
trr
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
2.0
1.2
V
IF = 0.5A, -di/dt = 100A/μs
750
ns
VR = 100V, VGS = 0V
Note
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Pins: 1 - Gate
3 - Source
2 - Drain
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
