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IXTX170P10P

型号：

IXTX170P10P

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

146 K

下载PDF手册
PolarPTM  
Power MOSFET  
VDSS = -100V  
ID25 = -170A  
RDS(on) 14m  
IXTK170P10P  
IXTX170P10P  
P-Channel Enhancement Mode  
Avalanche Rated  
TO-264 (IXTK)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
D
S
TJ = 25°C to 150C  
TJ = 25C to 150C, RGS = 1M  
-100  
-100  
V
V
VDGR  
Tab  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
PLUS247 (IXTX)  
ID25  
TC = 25C (Chip Capability)  
-170  
A
ILRMS  
IDM  
Lead Current Limit, RMS  
TC = 25C, Pulse Width Limited by TJM  
-160  
- 510  
A
A
IA  
TC = 25C  
TC = 25C  
-170  
3.5  
A
J
G
D
Tab  
S
EAS  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150C  
TC = 25C  
10  
V/ns  
W
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
890  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
C  
C  
C  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Features  
International Standard Packages  
Rugged PolarPTM Process  
High Current Handling Capability  
Fast Intrinsic Diode  
Md  
Mounting Force  
Mounting Forque  
(PLUS247)  
(TO-264)  
20..120 / 4.5..27  
1.13 / 10  
N/lb.  
Nm/lb.in.  
Weight  
PLUS247  
TO-264  
6
10  
g
g
Avalanche Rated  
Low Package Inductance  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
Easy to Mount  
Space Savings  
High Power Density  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
-100  
- 2.0  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = - 250A  
VDS = VGS, ID = -1mA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
- 4.0  
Applications  
100 nA  
High-Side Switches  
Push Pull Amplifiers  
DC Choppers  
Automatic Test Equipment  
IDSS  
- 50 A  
- 250 A  
TJ = 125C  
RDS(on)  
VGS = -10V, ID = 0.5 • ID25, Note 1  
14 m  
Current Regulators  
DS99974C(5/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXTK170P10P  
IXTX170P10P  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 AA Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = -10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = - 25V, f = 1MHz  
35  
58  
S
Ciss  
Coss  
Crss  
12.6  
4190  
930  
nF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
32  
75  
82  
45  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1(External)  
: 1 - Gate  
2 - Drain  
3 - Source  
4 - Drain  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
A
A1  
A2  
b
b1  
b2  
4.82  
2.54  
2.00  
1.12  
2.39  
2.90  
5.13  
2.89  
2.10  
1.42  
2.69  
3.09  
.190  
.100  
.079  
.044  
.094  
.114  
.202  
.114  
.083  
.056  
.106  
.122  
Qg(on)  
Qgs  
240  
45  
nC  
nC  
nC  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
120  
c
D
E
e
0.53  
25.91 26.16  
19.81 19.96  
5.46 BSC  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
RthJC  
RthCS  
0.14C/W  
C/W  
0.15  
.215 BSC  
J
K
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
2.29  
2.59  
Source-Drain Diode  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
Symbol  
Test Conditions  
Characteristic Values  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
IS  
VGS = 0V  
-170  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = - 85A, VGS = 0V, Note 1  
- 680  
- 3.3  
PLUS 247TM Outline  
trr  
176  
1.25  
-14.2  
ns  
C  
A
IF = - 85A, -di/dt = -100A/s  
QRM  
IRM  
VR = - 50V, VGS = 0V  
Note  
1: Pulse test, t 300s, duty cycle, d 2%.  
Terminals: 1 - Gate  
2 - Drain  
3 - Source  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTK170P10P  
IXTX170P10P  
Fig. 1. Output Characteristics @ TJ = 25oC  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
-180  
-160  
-140  
-120  
-100  
-80  
-300  
-270  
-240  
-210  
-180  
-150  
-120  
-90  
V
= -15V  
-10V  
GS  
V
= -15V  
GS  
- 9V  
-10V  
- 9V  
- 8V  
- 8V  
- 7V  
- 6V  
- 7V  
-60  
- 6V  
- 5V  
-40  
-60  
- 5V  
-2.0  
-20  
-30  
0
0
0.0  
-0.4  
-0.8  
-1.2  
-1.6  
-2.4  
0
-1  
-2  
-3  
-4  
-5  
-6  
-7  
-8  
-9  
-10  
-11  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = - 85A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
-180  
-160  
-140  
-120  
-100  
-80  
V
= -15V  
GS  
V
= -10V  
GS  
-10V  
- 9V  
I
= -170A  
D
- 8V  
- 7V  
I
= - 85A  
D
-60  
- 6V  
-40  
-20  
- 5V  
-3.0  
0
0.0  
-0.5  
-1.0  
-1.5  
-2.0  
-2.5  
-3.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = - 85A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
-180  
-160  
-140  
-120  
-100  
-80  
V
= -10V  
-15V  
GS  
External Lead Current Limit  
T = 125oC  
J
-60  
T = 25oC  
J
-40  
-20  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
-40  
-80  
-120  
-160  
-200  
-240  
-280  
TC - Degrees Centigrade  
ID - Amperes  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXTK170P10P  
IXTX170P10P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
-160  
-140  
-120  
-100  
-80  
T
= - 40oC  
J
T
J
= - 40oC  
25oC  
125oC  
25oC  
125oC  
-60  
-40  
-20  
0
-3.0  
-3.5  
-4.0  
-4.5  
-5.0  
-5.5  
-6.0  
-6.5  
-7.0  
-4.5  
-40  
0
-20  
-40  
-60  
-80  
-100  
-120  
-140  
-160  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
-300  
-270  
-240  
-210  
-180  
-150  
-120  
-90  
-10  
-9  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
V
= - 50V  
DS  
I
I
= - 85A  
= -1mA  
D
G
T
J
= 125oC  
T
J
= 25oC  
-60  
-30  
0
0
40  
80  
120  
160  
200  
240  
-0.5  
-1.0  
-1.5  
-2.0  
-2.5  
-3.0  
-3.5  
-4.0  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
100,000  
10,000  
1,000  
100  
-1,000  
100μs  
25μs  
f
= 1 MHz  
1ms  
10ms  
R
DS(on)  
Limit  
C
C
iss  
-
100  
oss  
DC, 100ms  
-10  
T = 150ºC  
J
C
rss  
T
= 25ºC  
C
Single Pulse  
-
1
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
-
-
-
100  
1
10  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTK170P10P  
IXTX170P10P  
Fig. 13. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_170P10P(B9)03-25-09-C  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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