请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXTP05N100P

型号：

IXTP05N100P

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

7 页

PDF大小：

277 K

下载PDF手册
PolarTM  
Power MOSFET  
VDSS = 1000V  
ID25 = 0.5A  
RDS(on) 30  
IXTA05N100P  
IXTP05N100P  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
TO-263 (IXTA)  
Symbol  
Test Conditions  
Maximum Ratings  
G
S
VDSS  
VDGR  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
1000  
1000  
V
V
D (Tab)  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
TO-220 (IXTP)  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
0.5  
1.25  
A
A
IA  
EAS  
TC = 25C  
TC = 25C  
0.5  
50  
A
mJ  
G
D
S
D (Tab)  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150C  
TC = 25C  
10  
50  
V/ns  
W
G = Gate  
D
= Drain  
S = Source  
Tab = Drain  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
C  
C  
C  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Features  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque ( TO-220)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
International Standard Packages  
Avalanche Rated  
Fast Intrinsic Diode  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
Dynamic dv/dt Rated  
Low Package Inductance  
Advantages  
High Power Density  
Easy to Mount  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
1000  
2.0  
Typ.  
Max.  
Space Savings  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 50μA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
4.0  
Applications  
 50 nA  
Switch-Mode and Resonant-Mode  
Power Supplies  
IDSS  
10 A  
750 μA  
TJ = 125C  
DC-DC Converters  
Laser Drivers  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
24  
30  
AC and DC Motor Drives  
Robotics and Servo Controls  
DS100272B(6/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTA05N100P  
IXTP05N100P  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 30V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
0.24  
0.40  
S
Ciss  
Coss  
Crss  
196  
15  
4
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
6
15  
20  
15  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 50V, ID = 0.5 • ID25  
RG = 30(External)  
Qg(on)  
Qgs  
8.1  
0.7  
4.2  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
2.5 C/W  
C/W  
TO-220  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
0.5  
A
A
ISM  
VSD  
trr  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
2.0  
1.2  
V
IF = 0.5A, -di/dt = 100A/s  
750  
ns  
VR = 100V, VGS = 0V  
Note  
1. Pulse test, t 300s, duty cycle, d 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTA05N100P  
IXTP05N100P  
Fig. 1. Output Characteristics @ TJ = 25oC  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
1
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
0.5  
0.4  
0.3  
0.2  
0.1  
0
V
= 10V  
7V  
V
= 10V  
7V  
GS  
GS  
6V  
6V  
5V  
5V  
4V  
4V  
0
0
0
2
4
6
8
10  
12  
14  
16  
0
5
10  
15  
20  
25  
30  
35  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 0.25A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
0.5  
0.4  
0.3  
0.2  
0.1  
0
V
= 10V  
7V  
GS  
V
= 10V  
GS  
6V  
5V  
I
= 0.50A  
D
I
= 0.25A  
D
4V  
5
10  
15  
20  
25  
30  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 0.25A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs. Case Temperature  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
V
= 10V  
GS  
T = 125oC  
J
T = 25oC  
J
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTA05N100P  
IXTP05N100P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
T
J
= - 40oC  
25oC  
125oC  
T
J
= 125oC  
25oC  
- 40oC  
2.5  
0.4  
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
0.9  
40  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
VGS - Volts  
ID - Amperes  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
10  
9
8
7
6
5
4
3
2
1
0
2
1.8  
1.6  
1.4  
1.2  
1
V
= 500V  
DS  
I
I
= 0.25A  
= 1mA  
D
G
0.8  
0.6  
0.4  
0.2  
0
T
= 125oC  
J
T
J
= 25oC  
0.5  
0.6  
0.7  
0.8  
0
1
2
3
4
5
6
7
8
9
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
10  
1,000  
100  
10  
= 1 MHz  
f
R
Limit  
DS(on)  
C
iss  
1
100μs  
C
C
oss  
1ms  
0.1  
0.01  
10ms  
T = 150oC  
= 25oC  
DC  
J
T
C
rss  
Single Pulse  
1
5
10  
15  
20  
25  
30  
35  
10  
100  
1000  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
VDS - Volts  
IXTA05N100P  
IXTP05N100P  
Fig. 13. Maximum Transient Thermal Impedance  
10  
1
0.1  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Second  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXYS REF: IXT_05N100P (N1)7-22-10  
IXTA05N100P  
IXTP05N100P  
TO-263 Outline  
1 - Gate  
2,4 - Drain  
3 - Source  
TO-220 Outline  
1 - Gate  
2,4 - Drain  
3 - Source  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
厂商 型号 描述 页数 下载

IXYS

 		IXTA-200N085T N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ] 5 页

LITTELFUSE

 		IXTA02N250 [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN ] 5 页

IXYS

 		IXTA02N250HV [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 ] 5 页

LITTELFUSE

 		IXTA02N250HV [ Power Field-Effect Transistor, ] 6 页

IXYS

 		IXTA02N250HV-TRL [ Power Field-Effect Transistor, ] 5 页

IXYS

 		IXTA02N450HV 高电压功率MOSFET[ High Voltage Power MOSFETs ] 5 页

IXYS

 		IXTA05N100 高电压的MOSFET[ High Voltage MOSFET ] 4 页

IXYS

 		IXTA05N100-TRL [ Power Field-Effect Transistor, ] 5 页

LITTELFUSE

 		IXTA05N100HVTRL [ Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN ] 4 页

IXYS

 		IXTA05N100P [ Fast Intrinsic Diode ] 7 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.203438s