WT-210DV06
Zener Diode Chips for ESD Bidrectional Protection
1. Feature:
1-1 Silicon Zener diode chips for electrostatic discharge (ESD) protection application
1-2 This specification applies to N/P/N-Type silicon Zener diode chip
Device No:WT-210DV06
2. Structure:
2-1 Planar type: Silicon Diode
2-2 Electrodes:
Top side : Aluminum Alloy.(Cathode)
Back side : Gold Layer.(Cathode)
3. Size:
3-1 Chip size:10 mils x 10 mils (254 µm x 254 µm).
3-2 Chip thickness: 4.0 ± 1.0 mils (100 ± 25.4 µm).
3-3 Active area:6.3 mils x 6.3 mils (160 µm x 160µm).
3-4 Bonding pad: Ø 7.5 mils (Ø190 µm).
3-5 Pattern drawing: Refer to the attached drawing.
4. Electrical Characteristics (Ta=25 C)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Vz (Forward)
-
-
5.5
5.3
7.2
7.2
Zener Voltage
I =5mA
z
V
V (Reverse)
z
Reverse Leakage
Current
-
-
-
-
VR
=4V
VR=5V
nA
IR
100
500
Electrostatic
Discharge
HBM
-
-
KV
ESD
8.0
MIL-STD 883
5. Drawing:
6. Protection Circuit:
(Top View)
Bonding pad
Top side
LED
Protection
Zener
N
P-Sub
N
Bonding pad
Back Side
WEITRON TECHNOLOGY CO., LTD.
TEL:886-2-29148158
FAX:886-2-29106796
Http://www.weitron.com.tw
Rev.E 05-Mar-10
