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IXTP18N60PM

型号：

IXTP18N60PM

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

114 K

下载PDF手册
PolarTM  
Power MOSFET  
VDSS = 600V  
ID25 = 9A  
RDS(on) ≤ 420mΩ  
IXTP18N60PM  
(Electrically Isolated Tab)  
N-Channel Enhancement Mode  
Avalanche Rated  
OVERMOLDED  
(IXTP...M) OUTLINE  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
600  
600  
V
V
G
VDGR  
D
Isolated Tab  
D = Drain  
S
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
G = Gate  
S = Source  
ID25  
IDM  
TC = 25°C  
9
A
A
TC = 25°C, Pulse Width Limited by TJM  
54  
IA  
TC = 25°C  
TC = 25°C  
18  
1
A
J
EAS  
Features  
dv/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
10  
90  
V/ns  
W
z
Plastic Overmolded Tab for Electrical  
Isolation  
International Standard Package  
Low RDS(on) and QG  
Avalanche Rated  
Low Package Inductance  
Fast Intrinsic Rectifier  
z
z
z
z
z
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
TL  
Tsold  
1.6mm (0.062in.) from Case for 10s  
Plastic Body for 10 Seconds  
300  
260  
°C  
°C  
Md  
Mounting Torque  
1.13 / 10  
2.5  
Nm/lb.in.  
g
Advantages  
Weight  
z
High Power Density  
Easy to Mount  
z
z
Space Savings  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
z
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
Laser Drivers  
AC and DC Motor Drives  
Robotics and Servo Controls  
(TJ = 25°C Unless Otherwise Specified)  
Min. Typ.  
Max.  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ± 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
600  
2.5  
V
V
z
4.5  
z
z
±100 nA  
IDSS  
25 μA  
TJ = 125°C  
250 μA  
RDS(on)  
VGS = 10V, ID = 9A, Note 1  
420 mΩ  
© 2010 IXYS CORPORATION, All Rights Reserved  
DS99739G(10/10)  
IXTP18N60PM  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
OVERMOLDED TO-220  
(TJ = 25°C, Unless Otherwise Specified)  
gfs  
VDS = 20V, ID = 9A, Note 1  
9
16  
S
Ciss  
Coss  
Crss  
2500  
280  
23  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
1
2
3
td(on)  
tr  
td(off)  
tf  
21  
22  
62  
22  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 9A  
RG = 5Ω (External)  
Qg(on)  
Qgs  
50  
15  
18  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 9A  
Qgd  
RthJC  
1.39 °C/W  
Terminals: 1 - Gate  
2 - Drain (Collector)  
3 - Source (Emitter)  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
IS  
VGS = 0V  
18  
A
A
ISM  
VSD  
trr  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
54  
1.5  
V
500  
ns  
IF = IS, VGS = 0V, -di/dt = 100A/μs  
VR = 100V  
Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTP18N60PM  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
40  
35  
30  
25  
20  
15  
10  
5
18  
16  
14  
12  
10  
8
VGS = 10V  
8V  
VGS = 10V  
8V  
7V  
7V  
6V  
6V  
6
4
5V  
5V  
2
0
0
0
0
0
1
2
3
4
5
6
7
8
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 9A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ =125ºC  
18  
16  
14  
12  
10  
8
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
VGS = 10V  
7V  
VGS = 10V  
I D = 18A  
6V  
5V  
I D = 9A  
6
4
2
0
2
4
6
8
10  
12  
14  
16  
18  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 9A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
10  
9
8
7
6
5
4
3
2
1
0
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
5
10  
15  
20  
25  
30  
35  
40  
45  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXTP18N60PM  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
40  
35  
30  
25  
20  
15  
10  
5
TJ = - 40ºC  
24  
20  
16  
12  
8
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
4
0
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
0
4
8
12  
16  
20  
24  
28  
32  
36  
40  
50  
10  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
70  
60  
50  
40  
30  
20  
10  
0
10  
9
8
7
6
5
4
3
2
1
0
VDS = 300V  
I D = 9A  
I G = 10mA  
TJ = 125ºC  
TJ = 25ºC  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Maximum Transient Thermal Impedance  
10  
10,000  
1,000  
100  
= 1MHz  
f
C
iss  
1
C
oss  
0.1  
0.01  
C
rss  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
0.0001  
0.001  
0.01  
0.1  
1
VDS - Volts  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.  
IXYS REF: F_18N60P(63)8-21-06-B  
厂商 型号 描述 页数 下载

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