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IXTX110N20L2

型号：

IXTX110N20L2

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

159 K

下载PDF手册
Advance Technical Information  
LinearL2TM Power  
MOSFET w/Extended  
FBSOA  
VDSS  
ID25  
= 200V  
= 110A  
IXTK110N20L2  
IXTX110N20L2  
RDS(on) < 24mΩ  
N-Channel Enhancement Mode  
Guaranteed FBSOA  
Avalanche Rated  
TO-264 (IXTK)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
200  
200  
V
V
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
G
(TAB)  
S
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
ID25  
IDM  
TC = 25°C  
110  
275  
A
A
PLUS247(IXTX)  
TC = 25°C, Pulse Width Limited by TJM  
IA  
EAS  
TC = 25°C  
TC = 25°C  
55  
5
A
J
PD  
TC = 25°C  
960  
W
G
TJ  
-55...+150  
150  
°C  
°C  
°C  
D
S
(TAB)  
TJM  
Tstg  
-55...+150  
G = Gate  
D
= Drain  
S = Source  
TAB = Drain  
TL  
1.6mm (0.063 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
TSOLD  
Md  
FC  
Mounting Torque (IXTK)  
Mounting Force (IXTX)  
1.13/10  
Nm/lb.in.  
N/lb.  
Features  
20..120 / 4.5..27  
z Designed for Linear Operation  
z International Standard Packages  
z Avalanche Rated  
z Guaranteed FBSOA at 75°C  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 3mA  
VGS = ±20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
200  
V
z Solid State Circuit Breakers  
z Soft Start Controls  
2.0  
4.5  
V
z Linear Amplifiers  
±200 nA  
z Programmable Loads  
z Current Regulators  
IDSS  
50 μA  
2.5 mA  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25 , Note 1  
24 mΩ  
DS100195(9/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXTK110N20L2  
IXTX110N20L2  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 (IXTK) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS= 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
55  
75  
95  
S
Ciss  
Coss  
Crss  
23  
2160  
320  
nF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
40  
100  
33  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1Ω (External)  
135  
Qg(on)  
Qgs  
500  
110  
182  
nC  
nC  
nC  
VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
0.13 °C/W  
°C/W  
0.15  
Safe-Operating-Area Specification  
Symbol  
SOA  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
VDS = 200V, ID = 2.88A, TC = 75°C, Tp = 5s 575  
W
PLUS 247TM (IXTX) Outline  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
110  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 55A, VGS = 0V, Note 1  
440  
1.35  
trr  
IRM  
QRM  
420  
39  
8.3  
ns  
A
μC  
IF = 55A, -di/dt = 100A/μs,  
VR = 100V, VGS = 0V  
Terminals: 1 - Gate  
2 - Drain (Collector)  
3 - Source (Emitter)  
4 - Drain (Collector)  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTK110N20L2  
IXTX110N20L2  
Fig. 1. Output Characteristics  
@ TJ = 25ºC  
Fig. 2. Extended Output Characteristics  
@ TJ = 25ºC  
120  
100  
80  
60  
40  
20  
0
280  
240  
200  
160  
120  
80  
VGS = 20V  
14V  
VGS = 20V  
14V  
12V  
10V  
8V  
12V  
10V  
8V  
6.5V  
6V  
6.5V  
6V  
5V  
4V  
40  
5V  
4V  
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
150  
150  
VDS - Volts  
VDS - Volts  
Fig. 3. Output Characteristics  
@ TJ = 125ºC  
Fig. 4. RDS(on) Normalized to ID = 55A Value vs.  
Junction Temperature  
120  
100  
80  
60  
40  
20  
0
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
VGS = 20V  
12V  
VGS = 10V  
10V  
8V  
I D = 110A  
6V  
I D = 55A  
5V  
4V  
0
1
2
3
4
5
6
7
-50  
-25  
0
25  
50  
75  
100  
125  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 55A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
120  
100  
80  
60  
40  
20  
0
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
0
20  
40  
60  
80 100 120 140 160 180 200 220 240 260  
ID - Amperes  
-50  
-25  
0
25  
50  
75  
100  
125  
TC - Degrees Centigrade  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXTK110N20L2  
IXTX110N20L2  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
160  
140  
120  
100  
80  
140  
120  
100  
80  
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
60  
- 40ºC  
60  
40  
40  
20  
20  
0
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
1.5  
40  
0
20  
40  
60  
80  
100  
120  
140  
160  
800  
10  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
16  
14  
12  
10  
8
320  
280  
240  
200  
160  
120  
80  
VDS = 100V  
I
I
D = 55A  
G = 10mA  
6
TJ = 125ºC  
4
TJ = 25ºC  
2
40  
0
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
1.4  
0
100  
200  
300  
400  
500  
600  
700  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal Impedance  
Fig. 11. Capacitance  
1.000  
0.100  
0.010  
0.001  
100,000  
10,000  
1,000  
100  
= 1 MHz  
f
C
iss  
C
C
oss  
rss  
0
5
10  
15  
20  
25  
30  
35  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Seconds  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTK110N20L2  
IXTX110N20L2  
Fig. 13. Forward-Bias Safe Operating Area  
@ TC = 25ºC  
Fig. 14. Forward-Bias Safe Operating Area  
@ TC = 75ºC  
1,000  
100  
10  
1,000  
100  
10  
RDS(on) Limit  
R
Limit  
DS(on)  
25µs  
25µs  
100µs  
100µs  
1ms  
1ms  
10ms  
10ms  
100ms  
DC  
TJ = 150ºC  
C = 75ºC  
Single Pulse  
TJ = 150ºC  
C = 25ºC  
Single Pulse  
100ms  
DC  
T
T
1
1
1
10  
100  
1,000  
1
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_110N20L2(9R)9-16-09  
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