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VUO52-20NO1

型号：

VUO52-20NO1

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

145 K

下载PDF手册
VUO52-20NO1  
3~  
Rectifier  
Standard Rectifier Module  
VRRM  
IDAV  
IFSM  
V
= 2000  
60 A  
=
=
350 A  
3~ Rectifier Bridge  
Part number  
VUO52-20NO1  
4/5  
6
8 10  
1/2  
V1-A-Pack  
Features / Advantages:  
Applications:  
Package:  
● Package with DCB ceramic  
● Reduced weight  
● Improved temperature and power cycling  
● Planar passivated chips  
● Very low forward voltage drop  
● Very low leakage current  
● Diode for main rectification  
● Isolation Voltage:  
● Industry standard outline  
● RoHS compliant  
● Soldering pins for PCB mounting  
● Height: 17 mm  
● Base plate: DCB ceramic  
● Reduced weight  
V~  
3600  
● For three phase bridge configurations  
● Supplies for DC power equipment  
● Input rectifiers for PWM inverter  
● Battery DC power supplies  
● Field supply for DC motors  
● Advanced power cycling  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130305b  
© 2013 IXYS all rights reserved  
VUO52-20NO1  
Ratings  
Rectifier  
Conditions  
Symbol  
VRSM  
Definition  
min. typ. max. Unit  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 150°C  
TVJ = 25°C  
2100  
2000  
40  
V
V
max. non-repetitive reverse blocking voltage  
max. repetitive reverse blocking voltage  
VRRM  
IR  
reverse current, drain current  
VR = 2000 V  
VR = 2000 V  
µA  
1.5 mA  
forward voltage drop  
VF  
20  
1.13  
V
V
V
V
A
IF =  
A
1.44  
1.07  
1.50  
60  
IF = 60 A  
IF = 20 A  
IF = 60 A  
TC = 110°C  
rectangular  
TVJ  
=
°C  
125  
bridge output current  
threshold voltage  
TVJ = 150°C  
TVJ = 150°C  
IDAV  
d = ⅓  
VF0  
0.83  
V
for power loss calculation only  
slope resistance  
rF  
11.5 mΩ  
1.3 K/W  
K/W  
thermal resistance junction to case  
thermal resistance case to heatsink  
RthJC  
RthCH  
Ptot  
0.3  
TC = 25°C  
TVJ = 45°C  
VR = 0 V  
95  
350  
380  
300  
320  
W
A
A
A
A
total power dissipation  
max. forward surge current  
IFSM  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
VR = 700 V; f = 1 MHz  
TVJ = 150°C  
VR = 0 V  
value for fusing  
I²t  
TVJ = 45°C  
VR = 0 V  
615 A²s  
600 A²s  
450 A²s  
425 A²s  
pF  
TVJ = 150°C  
VR = 0 V  
junction capacitance  
CJ  
TVJ = 25°C  
7
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130305b  
© 2013 IXYS all rights reserved  
VUO52-20NO1  
Ratings  
Package V1-A-Pack  
Symbol  
IRMS  
Definition  
Conditions  
per terminal  
min. typ. max.  
100  
Unit  
A
°C  
°C  
g
RMS current  
Tstg  
-40  
-40  
125  
150  
storage temperature  
virtual junction temperature  
TVJ  
Weight  
MD  
37  
2
2.5 Nm  
mounting torque  
terminal to terminal  
terminal to backside  
dSpp/App  
dSpb/Apb  
6.0  
12.0  
mm  
mm  
V
creepage distance on surface | striking distance through air  
t = 1 second  
V
3600  
3000  
isolation voltage  
ISOL  
50/60 Hz, RMS; IISOL ≤ 1 mA  
t = 1 minute  
V
Date Code Location  
yywwA  
Part Number (Typ)  
Lot No.:  
2D Data Matrix  
Ordering  
Standard  
Part Number  
Marking on Product  
Delivery Mode  
Box  
Quantity Code No.  
VUO52-20NO1  
VUO52-20NO1  
10  
463329  
Similar Part  
Package  
Voltage class  
VUO52-08NO1  
V1-A-Pack  
800  
1200  
1400  
1600  
1800  
2200  
1600  
1800  
VUO52-12NO1  
VUO52-14NO1  
VUO52-16NO1  
VUO52-18NO1  
VUO52-22NO1  
VUO34-16NO1  
VUO34-18NO1  
V1-A-Pack  
V1-A-Pack  
V1-A-Pack  
V1-A-Pack  
V1-A-Pack  
V1-A-Pack  
V1-A-Pack  
TVJ = 150°C  
* on die level  
Equivalent Circuits for Simulation  
Rectifier  
V0  
I
R0  
threshold voltage  
slope resistance *  
V0 max  
R0 max  
0.83  
10.2  
V
mΩ  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130305b  
© 2013 IXYS all rights reserved  
VUO52-20NO1  
Outlines V1-A-Pack  
4/5  
6
8 10  
1/2  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130305b  
© 2013 IXYS all rights reserved  
VUO52-20NO1  
Rectifier  
300  
250  
80  
1000  
50 Hz  
VR = 0 V  
0.8 x V RRM  
60  
TVJ = 45°C  
I2t  
[A2s]  
IF  
IFSM  
TVJ = 45°C  
200  
150  
100  
40  
[A]  
[A]  
TVJ = 130°C  
TVJ = 130°C  
TVJ = 125°C  
20  
0
150°C  
TVJ = 25°C  
100  
10-3  
10-2  
10-1  
100  
0.4  
0.8  
1.2  
1.6  
2.0  
1
10  
t [ms]  
VF [V]  
t [s]  
Fig. 2 Surge overload current  
Fig. 3 I2t versus time per diode  
Fig. 1 Forward current versus  
voltage drop per diode  
30  
25  
20  
15  
10  
5
80  
60  
RthJA  
:
DC =  
1
DC =  
1
0.5  
0.6 KW  
0.8 KW  
0.5  
1
2
4
8
KW  
KW  
KW  
KW  
0.4  
0.4  
0.33  
0.17  
0.08  
IF(AV)M  
0.33  
0.17  
0.08  
Ptot  
[W]  
40  
20  
0
[A]  
0
0
5
10 15 20 25  
0
25  
50  
75  
100  
125  
150  
0
25 50 75 100 125 150  
TA [°C]  
IdAVM [A]  
TC [°C]  
Fig. 4 Power dissipation vs. direct output current & ambient temperature  
Fig. 5 Max. forward current vs.  
case temperature  
1.6  
Constants for ZthJC calculation:  
1.2  
ZthJC  
i
Rth (K/W)  
ti (s)  
1
2
3
4
5
0.06070  
0.173  
0.008  
0.05  
0.06  
0.3  
0.8  
[K/W]  
0.3005  
0.463  
0.4  
0.3028  
0.15  
0.0  
1
10  
100  
1000  
10000  
t [ms]  
Fig. 6 Transient thermal impedance junction to case  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130305b  
© 2013 IXYS all rights reserved  
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