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IXTT360N055T2

型号：

IXTT360N055T2

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

182 K

下载PDF手册
Preliminary Technical Information  
TrenchT2TM Power  
MOSFET  
VDSS = 55V  
ID25 = 360A  
RDS(on) ≤ 2.4mΩ  
IXTH360N055T2  
IXTT360N055T2  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
TO-247 (IXTH)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
D
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
55  
55  
V
V
)  
S
VDGR  
VGSM  
Transient  
± 20  
V
TO-268 (IXTT)  
ID25  
ILRMS  
IDM  
TC = 25°C (Chip Capability)  
Lead Current Limit, RMS  
360  
160  
900  
A
A
A
TC = 25°C, Pulse Width Limited by TJM  
G
IA  
TC = 25°C  
TC = 25°C  
TC = 25°C  
180  
960  
935  
A
mJ  
W
S
D (TAB)  
EAS  
PD  
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
G = Gate  
S = Source  
D
= Drain  
TAB = Drain  
TJM  
Tstg  
-55 ... +175  
TL  
Tsold  
1.6mm (0.062in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
Features  
z International Standard Package  
z 175°C Operating Temperature  
z High Current Handling Capability  
z Avalanche Rated  
Md  
Mounting Torque (TO-247)  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-247  
TO-268  
6
4
g
g
z Fast Intrinsic Diode  
z
Low RDS(on)  
Symbol  
Test Conditions  
Characteristic Values  
Advantages  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS= 0V  
55  
V
V
Easy to Mount  
Space Savings  
High Power Density  
z
2.0  
4.0  
z
±200 nA  
IDSS  
10 μA  
Applications  
TJ = 150°C  
300 μA  
z
DC/DC Converters and Off-line UPS  
Primary- Side Switch  
High Current Switching Applications  
RDS(on)  
VGS = 10V, ID = 100A, Note 1  
2.4 mΩ  
z
z
DS100169A(8/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXTH360N055T2  
IXTT360N055T2  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXTH) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 60A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
65  
110  
S
Ciss  
Coss  
Crss  
20  
2650  
480  
nF  
pF  
pF  
∅ P  
1
2
3
RGi  
Gate Input Resistance  
1.6  
Ω
td(on)  
tr  
td(off)  
tf  
30  
23  
62  
56  
ns  
ns  
ns  
ns  
Resistive Switching Times  
e
V
GS = 10V, VDS = 0.5 • VDSS, ID = 100A  
Terminals: 1 - Gate  
2 - Drain  
Tab - Drain  
RG = 2Ω (External)  
3 - Source  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
Qg(on)  
Qgs  
330  
76  
nC  
nC  
nC  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
87  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
RthJC  
RthCH  
0.16 °C/W  
°C/W  
TO-247  
0.21  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Source-Drain Diode  
.780 .800  
.177  
Symbol  
Test Conditions  
Characteristic Values  
∅P 3.55  
Q
3.65  
.140 .144  
(TJ = 25°C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
IS  
VGS = 0V  
360  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
1440  
1.3  
TO-268 Outline  
trr  
78  
4.2  
ns  
A
IF = 150A, VGS = 0V  
IRM  
QRM  
-di/dt = 100A/μs  
VR = 27V  
164  
nC  
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTH360N055T2  
IXTT360N055T2  
Fig. 2. Extended Output Characteristics  
Fig. 1. Output Characteristics  
@ 25ºC  
@ 25ºC  
350  
300  
250  
200  
150  
100  
50  
350  
300  
250  
200  
150  
100  
50  
VGS = 15V  
VGS = 10V  
10V  
9V  
8V  
7V  
8V  
7V  
6V  
5V  
6V  
5V  
4V  
4V  
0
0
0.0  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
7.0  
8.0  
VDS - Volts  
VDS - Volts  
Fig. 3. Output Characteristics  
@ 150ºC  
Fig. 4. RDS(on) Normalized to ID = 180A Value vs.  
Junction Temperature  
350  
300  
250  
200  
150  
100  
50  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGS = 15V  
10V  
VGS = 10V  
8V  
7V  
9V  
I D = 300A  
I D = 180A  
6V  
5V  
4V  
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 180A Value vs.  
Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
180  
160  
140  
120  
100  
80  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
External Lead Current Limit  
TJ = 175ºC  
VGS = 10V  
15V  
- - - - -  
60  
40  
TJ = 25ºC  
300  
20  
0
0
50  
100  
150  
200  
250  
350  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
ID - Amperes  
TC - Degrees Centigrade  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXTH360N055T2  
IXTT360N055T2  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
200  
180  
160  
140  
120  
100  
80  
240  
200  
160  
120  
80  
TJ = - 40ºC  
25ºC  
150ºC  
TJ = 150ºC  
60  
25ºC  
- 40ºC  
40  
40  
20  
0
0
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
220  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
300  
250  
200  
150  
100  
50  
VDS = 27.5V  
I
I
D = 180A  
G = 10mA  
TJ = 150ºC  
TJ = 25ºC  
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
0
50  
100  
150  
200  
250  
300  
350  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
1,000  
100  
10  
100,000  
10,000  
1,000  
100  
R
Limit  
DS(on)  
= 1 MHz  
f
25µs  
100µs  
C
External Lead Current Limit  
iss  
1ms  
C
oss  
10ms  
100ms  
DC  
T
T
= 175ºC  
= 25ºC  
J
C
rss  
C
Single Pulse  
1
0
5
10  
15  
20  
25  
30  
35  
40  
1
10  
100  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_360N055T2(V8)7-14-09  
IXTH360N055T2  
IXTT360N055T2  
Fig. 13. Resistive Turn-on  
Fig. 14. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Rise Time vs. Drain Current  
70  
60  
50  
40  
30  
20  
10  
0
70  
60  
50  
40  
30  
20  
10  
RG = 2ꢀ , VGS = 10V  
RG = 2Ω , VGS = 10V  
DS = 27.5V  
VDS = 27.5V  
V
TJ = 125ºC  
I D = 100A  
I D = 200A  
TJ = 25ºC  
40  
60  
80  
100  
120  
140  
160  
180  
200  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
120  
90  
110  
tf  
t
d(off) - - - -  
RG = 2Ω, VGS = 10V  
DS = 27.5V  
110  
100  
90  
t r  
td(on) - - - -  
80  
70  
60  
50  
40  
30  
20  
100  
90  
80  
70  
60  
50  
40  
TJ = 125ºC, VGS = 10V  
DS = 27.5V  
V
V
I D = 100A  
I D = 200A  
80  
70  
I D = 100A  
60  
I D = 200A  
50  
40  
30  
0
20  
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
75  
70  
65  
60  
55  
50  
45  
40  
35  
120  
110  
100  
90  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
t f  
t
d(off) - - - -  
RG = 2ꢀ, VGS = 10V  
DS = 27.5V  
t f  
t
d(off) - - - -  
TJ = 125ºC, VGS = 10V  
DS = 27.5V  
V
V
I D = 100A, 200A  
80  
TJ = 25ºC, 125ºC  
70  
60  
50  
0
0
40  
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
40  
60  
80  
100  
120  
140  
160  
180  
200  
ID - Amperes  
RG - Ohms  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXTH360N055T2  
IXTT360N055T2  
1
Fig. 19. Maximum Transient Thermal Impedance  
0.20  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_360N055T2(V8)7-14-09  
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