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IXTA220N04T2-TRL

型号：

IXTA220N04T2-TRL

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

255 K

下载PDF手册
TrenchT2TM  
Power MOSFET  
VDSS = 40V  
ID25 = 220A  
RDS(on) 3.5m  
IXTA220N04T2  
IXTP220N04T2  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 (IXTA)  
G
S
D (Tab)  
TO-220 (IXTP)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 175C  
40  
40  
V
V
VDGR  
TJ = 25C to 175C, RGS = 1M  
VGSM  
Transient  
20  
V
G
D
ID25  
IL(RMS)  
IDM  
TC = 25C  
External Lead Current Limit  
TC = 25C, Pulse Width Limited by TJM  
220  
120  
660  
A
A
A
S
D (Tab)  
G = Gate  
D
= Drain  
S = Source Tab = Drain  
IA  
TC = 25C  
TC = 25C  
110  
600  
A
EAS  
mJ  
PD  
TC = 25C  
360  
W
Features  
TJ  
-55 ... +175  
175  
C  
C  
C  
TJM  
Tstg  
International Standard Packages  
Avalanche Rated  
Low Package Inductance  
Fast Intrinsic Rectifier  
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
175°C Operating Temperature  
High Current Handling Capability  
ROHS Compliant  
High Performance Trench  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
Technology for extremely low RDS(on)  
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250A  
VDS = VGS, ID = 250A  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
40  
V
V
Applications  
2.0  
4.0  
Automotive Engine Control  
Synchronous Buck Converter  
           200 nA  
A  
IDSS  
5
(for Notebook SystemPower &  
TJ = 150C  
VGS = 10V, ID = 50A, Notes 1 & 2  
50 A  
3.5 m  
General Purpose Point & Load)  
DC/DC Converters  
High Current Switching Applications  
RDS(on)  
2.8  
Power Train Management  
Distributed Power Architecture  
  
DS99918D(7/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTA220N04T2  
IXTP220N04T2  
Symbol  
Test Conditions  
Characteristic Values  
TO-263 Outline  
A
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
E
E1  
C2  
L1  
L2  
gfs  
VDS = 10V, ID = 60A, Note 1  
40  
66  
S
D1  
D
4
H
A1  
Ciss  
Coss  
Crss  
6820  
1185  
250  
pF  
pF  
pF  
1
3
2
VGS = 0V, VDS = 25V, f = 1MHz  
b
b2  
L3  
c
e
e
0.43 [11.0]  
0  
0.34 [8.7]  
td(on)  
tr  
td(off)  
tf  
15  
21  
31  
21  
ns  
ns  
ns  
ns  
Resistive Switching Times  
0.66 [16.6]  
A2  
V
GS = 10V, VDS = 20V, ID = 50A  
1 - Gate  
2,4 - Drain  
3 - Source  
0.20 [5.0]  
0.10 [2.5]  
60.12 [3.0]  
0.06 [1.6]  
RG = 3.3(External)  
Qg(on)  
Qgs  
112  
33  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS  
Qgd  
30  
RthJC  
RthCS  
0.42 C/W  
C/W  
TO-220  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
220  
660  
1.1  
IS  
VGS = 0V  
A
A
V
TO-220 Outline  
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 50A, VGS = 0V, Note 1  
A
E
oP  
A1  
H1  
Q
trr  
45  
1.8  
32  
ns  
A
D2  
E1  
D
IF = 110A, VGS = 0V,  
IRM  
QRM  
D1  
-di/dt = 100A/s, VR = 20V  
nC  
A2  
EJECTOR  
PIN  
L1  
L
3X b  
3X b2  
ee  
c
e1  
Notes: 1. Pulse test, t 300s; duty cycle, d  2%.  
1 - Gate  
2,4 - Drain  
3 - Source  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5mm or less from the package body.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXTA220N04T2  
IXTP220N04T2  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
350  
300  
250  
200  
150  
100  
50  
V
= 15V  
GS  
V
= 15V  
GS  
200  
160  
120  
80  
10V  
9V  
8V  
10V  
9V  
8V  
7V  
7V  
6V  
6V  
5V  
40  
5V  
0
0
0
0.0  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 110A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150oC  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 15V  
GS  
200  
160  
120  
80  
10V  
9V  
8V  
V
= 10V  
GS  
I
= 220A  
D
7V  
6V  
I
= 110A  
D
40  
5V  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 110A Value vs.  
Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
140  
120  
100  
80  
V
= 10V  
15V  
GS  
External Lead Current Limit  
T = 175oC  
J
60  
40  
T = 25oC  
J
20  
0
40  
80  
120  
160  
200  
240  
280  
320  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TC - Degrees Centigrade  
ID - Amperes  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTA220N04T2  
IXTP220N04T2  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
160  
140  
120  
100  
80  
120  
100  
80  
60  
40  
20  
0
T
= - 40oC  
J
25oC  
150oC  
T
J
=150oC  
60  
25oC  
- 40oC  
40  
20  
0
2.5  
0.3  
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
1.3  
40  
0
20  
40  
60  
80  
100  
120  
140  
160  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
300  
270  
240  
210  
180  
150  
120  
90  
10  
9
8
7
6
5
4
3
2
1
0
V
= 20V  
DS  
I
I
= 110A  
= 10mA  
D
G
T
= 150oC  
J
= 25oC  
60  
T
J
30  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100 110 120  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
1,000  
100  
10  
10,000  
1,000  
100  
R
Limit  
DS(on)  
C
iss  
25μs  
100μs  
External Lead Limit  
1ms  
C
oss  
10ms  
T = 175oC  
J
DC  
100ms  
T
= 25oC  
C
C
rss  
f
= 1 MHz  
5
Single Pulse  
1
10  
15  
20  
25  
30  
35  
1
10  
100  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTA220N04T2  
IXTP220N04T2  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
28  
26  
24  
22  
20  
18  
28  
26  
24  
22  
20  
18  
16  
R
= 3.3Ω, V = 10V  
GS  
G
R
= 3.3Ω, V = 10V  
GS  
G
V
= 20V  
DS  
V
= 20V  
DS  
T = 125oC  
J
I
= 110A  
D
T = 25oC  
J
I
= 220A  
D
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
40  
60  
80  
100  
120  
140  
160  
180  
200  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
120  
100  
80  
60  
40  
20  
0
65  
36  
42  
t f  
td(off)  
t r  
td(on)  
32  
28  
24  
20  
16  
12  
38  
34  
30  
26  
22  
18  
55  
45  
35  
25  
15  
5
T = 125oC, V = 10V  
R
G
= 3.3Ω, V = 10V  
GS  
J
GS  
V
= 20V  
DS  
V
= 20V  
DS  
I
= 220A  
D
I
= 220A, 110A  
D
I
= 110A  
D
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
2
4
6
8
10  
12  
14  
16  
18  
20  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
200  
200  
180  
160  
140  
120  
100  
80  
42  
38  
34  
30  
26  
22  
18  
14  
50  
46  
42  
38  
34  
30  
26  
22  
180  
160  
140  
120  
100  
80  
t f  
td(off)  
t f  
td(off)  
T = 125oC, V = 10V  
J
GS  
R
G
= 3.3Ω, V = 10V  
GS  
V
= 20V  
DS  
V
= 20V  
DS  
T = 125oC  
J
I
= 110A  
D
60  
60  
40  
40  
I
= 220A  
D
20  
20  
T = 25oC  
J
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
RG - Ohms  
ID - Amperes  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTA220N04T2  
IXTP220N04T2  
Fig. 19. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_220N04T2 (V5) 7-10-18-F  
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