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VUO55-12NO7

型号:

VUO55-12NO7

描述:

三相整流桥[ Three Phase Rectifier Bridge ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

85 K

VUO 55  
IdAVM = 58 A  
VRRM = 1200-1800 V  
Three Phase  
Rectifier Bridge  
+
+
-
VRSM  
V
VRRM  
V
Type  
~
~
~
1200  
1400  
1600  
1800  
1200  
1400  
1600  
1800  
VUO 55-12NO7  
VUO 55-14NO7  
VUO 55-16NO7  
VUO 55-18NO7*  
~
~
~
* delivery time on request  
Symbol  
Test Conditions  
Maximum Ratings  
Features  
Package with screw terminals  
Isolation voltage 3000 V~  
Planar passivated chips  
Blocking voltage up to 1800 V  
IdAVM  
IFSM  
TC = 85°C, module  
58  
A
TVJ = 45°C;  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
750  
820  
A
A
Low forward voltage drop  
T
VJ = TVJM  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
670  
740  
A
A
UL registered E 72873  
VR = 0  
I2t  
TVJ = 45°C  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
2800  
2820  
A2s  
A2s  
A2s  
A2s  
Applications  
Supplies for DC power equipment  
Input rectifiers for PWM inverter  
Battery DC power supplies  
Field supply for DC motors  
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
2250  
2300  
TVJ  
TVJM  
Tstg  
-40...+150  
150  
-40...+150  
°C  
°C  
°C  
Advantages  
Easy to mount with two screws  
Space and weight savings  
Improved temperature and power  
VISOL  
50/60 Hz, RMS  
IISOL £ 1 mA  
t = 1 min  
t = 1 s  
2500  
3000  
V~  
V~  
Md  
Mounting torque (M5)  
5 ± 15 %  
Nm  
cycling  
44 ± 15 % lb.in.  
3 ± 15 % Nm  
26 ± 15 % lb.in.  
Terminal connection torque (M5)  
typ.  
Dimensions in mm (1 mm = 0.0394")  
Weight  
260  
g
Symbol  
IR  
Test Conditions  
Characteristic Values  
VR = VRRM  
;
;
TVJ = 25°C  
TVJ = TVJM  
£
£
0.3  
10.0  
mA  
mA  
VR = VRRM  
VF  
IF = 150 A;  
TVJ = 25°C  
£
1.6  
V
VT0  
rT  
For power-loss calculations only  
0.85  
8
V
mW  
RthJC  
per diode; DC current  
per module  
per diode; DC current  
per module  
2.7  
0.45  
3.06  
0.51  
K/W  
K/W  
K/W  
K/W  
RthJH  
Data according to IEC 60747 and refer to a single diode unless otherwise stated.  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2000 IXYS All rights reserved  
1 - 2  
VUO 55  
I2t  
Fig. 1 Forward current versus  
voltage drop per diode  
Fig. 2 Surge overload current per diode  
IFSM: Crest value. t: duration  
Fig. 3 I2t versus time (1-10 ms)  
per diode  
Fig. 4 Power dissipation versus direct output current and ambient temperature  
Fig. 5 Maximum forward current at  
case temperature  
Constants for ZthJC calculation:  
i
Rthi (K/W)  
ti (s)  
1
2
3
4
0.036  
0.149  
0.615  
1.9  
0.013  
0.034  
1.35  
23.0  
Constants for ZthJK calculation:  
i
Rthi (K/W)  
ti (s)  
1
2
3
4
5
0.036  
0.149  
0.615  
1.9  
0.013  
0.034  
1.35  
23.0  
52.0  
0.36  
Fig. 6 Transient thermal impedance per diode  
© 2000 IXYS All rights reserved  
2 - 2  
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