IXTH/IXTT 10P50
IXTH/IXTT 11P50
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
VDS = -10 V; ID = ID25, pulse test
5
9
S
1
2
3
Ciss
Coss
Crss
4700
430
135
pF
pF
pF
VGS = 0 V, VDS = -25 V, f = 1 MHz
td(on)
tr
td(off)
tf
33
27
35
35
ns
ns
ns
ns
VGS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 4.7 Ω (External)
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
A12
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
Qg(on)
Qgs
Qgd
160
46
92
nC
nC
nC
A
VGS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
b
b12
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
b
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
RthJC
RthCS
0.42 K/W
K/W
20.80 21.46
(TO-247)
0.25
15.75 16.26
e
5.20
5.72 0.205 0.225
L
19.81 20.32
.780 .800
L1
4.50
.177
∅P 3.55
3.65
.140 .144
Q
5.89
4.32
6.40 0.232 0.252
R
5.49
.170 .216
S
6.15 BSC
242 BSC
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-268 Outline
Symbol
IS
TestConditions
VGS = 0
10P50
11P50
-10
-11
A
A
ISM
VSD
trr
Repetitive; pulse width limited by TJM 10P50
11P50
-40
-44
A
A
IF = IS, VGS = 0 V,
-3
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IF = IS, di/dt = 100 A/µs
500
ns
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
4,850,072
