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IXTH2N150L

型号：

IXTH2N150L

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

117 K

下载PDF手册
Advance Technical Information  
LinearTM Power MOSFET  
w/Extended FBSOA  
VDSS = 1500V  
ID25 = 2A  
RDS(on) 15  
IXTH2N150L  
N-Channel Enhancement Mode  
Guaranteed FBSOA  
Avalanche Rated  
TO-247  
G
D
(Tab)  
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
1500  
1500  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
2
6
A
A
PD  
TC = 25C  
290  
W
Features  
TJ  
-55 to +150  
+150  
C  
C  
C  
Designed for Linear Operation  
International Standard Package  
Avalanche Rated  
TJM  
Tstg  
-55 to +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Guaranteed FBSOA at 75C  
Md  
Mounting Torque (TO-247)  
1.13 / 10  
6
Nm/lb.in  
g
Advantages  
Weight  
Easy to Mount  
Space Savings  
High Power Density  
Applications  
DC Choppers  
DC-DC Converters  
Battery Chagers  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
1500  
6.0  
Typ.  
Max.  
Programmable Loads  
Current Regulators  
Temperature and Lighting Controls  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250A  
VDS = VGS, ID = 250A  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
8.5  
100 nA  
IDSS  
15 A  
TJ = 125C  
VGS = 20V, ID = 0.5 • ID25, Note 1  
150 A  
RDS(on)  
15  
© 2013 IXYS CORPORATION, All Rights Reserved  
DS100584(12/13)  
IXTH2N150L  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
0.4  
0.7  
S
Ciss  
Coss  
Crss  
1470  
92  
pF  
pF  
pF  
P  
1
2
3
30  
td(on)  
tr  
td(off)  
tf  
33  
55  
85  
84  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG =10(External)  
e
Terminals: 1 - Gate  
2 - Drain  
Qg(on)  
Qgs  
72  
15  
30  
nC  
nC  
nC  
3 - Source  
VGS = 20V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Dim.  
Millimeter  
Inches  
Min. Max.  
Qgd  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
RthJC  
RthCS  
0.43 C/W  
C/W  
0.21  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Safe Operating Area Specification  
.780 .800  
.177  
Characteristic Values  
P 3.55  
Q
3.65  
.140 .144  
Symbol  
SOA  
Test Conditions  
Min.  
Typ.  
Max.  
5.89  
6.40 0.232 0.252  
VDS = 1200V, ID = 0.10A, TC = 75°C, Tp = 5s  
120  
W
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
2
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
8
1.5  
trr  
IRM  
QRM  
1.86  
24  
22  
μs  
A
μC  
IF = 2A, -di/dt = 100A/s,  
VR = 100V, VGS = 0V  
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTH2N150L  
Fig. 2. Output Characteristics @ TJ = 125ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
3
2.5  
2
2
1.8  
1.6  
1.4  
1.2  
1
V
= 20V  
GS  
V
= 20V  
GS  
13V  
10V  
1.5  
1
12V  
11V  
0.8  
0.6  
0.4  
0.2  
0
9V  
8V  
7V  
0.5  
0
10V  
9V  
0
10  
20  
30  
40  
50  
60  
70  
80  
0
10  
20  
30  
40  
50  
60  
70  
80  
VDS - Volts  
VDS - Volts  
Fig. 3. RDS(on) Normalized to ID = 1A Value vs.  
Junction Temperature  
Fig. 4. RDS(on) Normalized to ID = 1A Value vs.  
Drain Current  
3.8  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
V
= 20V  
GS  
V
= 20V  
T
J
= 125ºC  
GS  
I
= 2A  
D
I
= 1A  
D
T
J
= 25ºC  
0
0.5  
1
1.5  
2
2.5  
3
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TJ - Degrees Centigrade  
Fig. 5. Maximum Drain Current vs.  
Case Temperature  
Fig. 6. Input Admittance  
3
2.5  
2
2
1.6  
1.2  
0.8  
0.4  
0
T
= 125ºC  
J
25ºC  
- 40ºC  
1.5  
1
0.5  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
6
7
8
9
10  
11  
12  
13  
14  
TC - Degrees Centigrade  
VGS - Volts  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTH2N150L  
Fig. 8. Forward Voltage Drop of Intrinsic Diode  
Fig. 7. Transconductance  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
6
5
4
3
2
1
0
T = - 40ºC  
J
25ºC  
125ºC  
T
J
= 125ºC  
T
J
= 25ºC  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
0
0.5  
1
1.5  
2
2.5  
3
VSD - Volts  
ID - Amperes  
Fig. 10. Capacitance  
Fig. 9. Gate Charge  
20  
18  
16  
14  
12  
10  
8
10,000  
1,000  
100  
f
= 1 MHz  
V
= 750V  
DS  
I
I
= 1A  
D
G
C
C
iss  
= 10mA  
oss  
6
4
2
C
rss  
10  
0
0
5
10  
15  
20  
25  
30  
35  
40  
0
10  
20  
30  
40  
50  
60  
70  
VDS - Volts  
QG - NanoCoulombs  
Fig. 11. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Second  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTH2N150L  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 13. Forward-Bias Safe Operating Area  
@ T = 75ºC  
@ T = 25ºC  
C
C
10  
10  
R
Limit  
DS(on)  
R
Limit  
DS(on)  
100µs  
100µs  
1
1
1ms  
1ms  
10ms  
10ms  
100ms  
DC  
0.1  
0.1  
100ms  
DC  
T
= 150ºC  
J
T
= 150ºC  
= 75ºC  
J
T
C
= 25ºC  
T
C
Single Pulse  
Single Pulse  
0.01  
0.01  
100  
1,000  
10,000  
100  
1,000  
10,000  
VDS - Volts  
VDS - Volts  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_2N150L(4M) 12-10-13  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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