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4N65KL-T2Q-T

型号：

4N65KL-T2Q-T

品牌：

UTC[ Unisonic Technologies ]

页数：

7 页

PDF大小：

246 K

下载PDF手册
UNISONIC TECHNOLOGIES CO., LTD  
4N65K-TA  
Preliminary  
Power MOSFET  
4A, 650V N-CHANNEL  
POWER MOSFET  
DESCRIPTION  
The UTC 4N65K-TA is a high voltage power MOSFET  
designed to have better characteristics, such as fast switching  
time, low gate charge, low on-state resistance and have a high  
rugged avalanche characteristic. This power MOSFET is usually  
used in high speed switching applications including power  
supplies, PWM motor controls, high efficient DC to DC  
converters and bridge circuits.  
FEATURES  
* RDS(ON) < 2.8Ω @ VGS = 10 V, ID = 2.2 A  
* Fast Switching Capability  
* Avalanche Energy Specified  
* Improved dv/dt Capability, High Ruggedness  
SYMBOL  
www.unisonic.com.tw  
1 of 7  
Copyright © 2015 Unisonic Technologies Co., Ltd  
QW-R205-039.b  
4N65K-TA  
Preliminary  
Power MOSFET  
ORDERING INFORMATION  
Ordering Number  
Lead Free  
Pin Assignment  
Package  
Packing  
Halogen Free  
1
2
3
S
S
S
S
S
S
S
S
S
S
S
S
S
4N65KL-TA3-T  
4N65KL-TF3-T  
4N65KG-TA3-T  
4N65KG-TF3-T  
4N65KG-TF1-T  
4N65KG-TF2-T  
4N65KG-TF3T-T  
4N65KG-TM3-T  
4N65KG-TMS-T  
4N65KG-TMS2-T  
4N65KG-TMS4-T  
4N65KG-TN3-R  
4N65KG-TND-R  
4N65KG-T2Q-T  
4N65KG-T60-K  
TO-220  
TO-220F  
TO-220F1  
TO-220F2  
TO-220F3  
TO-251  
G
G
G
G
G
G
G
G
G
G
G
G
G
D
D
D
D
D
D
D
D
D
D
D
D
D
Tube  
Tube  
4N65KL-TF1-T  
Tube  
4N65KL-TF2-T  
Tube  
4N65KL-TF3T-T  
4N65KL-TM3-T  
Tube  
Tube  
4N65KL-TMS-T  
TO-251S  
TO-251S2  
TO-251S4  
TO-252  
Tube  
4N65KL-TMS2-T  
4N65KL-TMS4-T  
4N65KL-TN3-R  
Tube  
Tube  
Tape Reel  
Tape Reel  
Tube  
4N65KL-TND-R  
4N65KL-T2Q-T  
TO-252D  
TO-262  
4N65KL-T60-K  
Bulk  
TO-126  
Note: Pin Assignment: G: Gate  
D: Drain  
S: Source  
(1) T: Tube, R: Tape Reel, K: Bulk  
(2) TA3: TO-220, TF3: TO-220F, TF1: TO-220F1,  
TF1: TO-220F2, TF3T: TO-220F3, TM3: TO-251,  
TMS: TO-251S, TMS2: TO-251S2,  
4N65KL-TF3-T  
(1)Packing Type  
(2)Package Type  
TMS4: TO-251S4, TN3: TO-252, TMD: TO-252D,  
T2Q: TO-262, T60: TO-126  
(3)Green Package  
(3) L: Lead Free, G: Halogen Free and Lead Free  
MARKING  
PACKAGE  
MARKING  
TO-220  
TO-220F  
TO-220F1  
TO-220F2  
TO-220F3  
TO-251  
TO-251S  
TO-251S2  
TO-251S4  
TO-252  
TO-252D  
TO-262  
TO-126  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 7  
QW-R205-039.b  
www.unisonic.com.tw  
4N65K-TA  
Preliminary  
Power MOSFET  
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)  
PARAMETER  
SYMBOL  
VDSS  
VGSS  
ID  
RATINGS  
650  
±30  
4.0  
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage  
V
Continuous  
A
Drain Current  
Pulsed (Note2)  
Single Pulsed (Note3)  
IDM  
16  
A
Avalanche Energy  
EAS  
150  
4.5  
mJ  
V/ns  
W
Peak Diode Recovery dv/dt (Note4)  
TO-220/TO-262  
dv/dt  
106  
34  
TO-220F  
W
TO-220F1/TO-220F2  
TO-220F3  
36  
W
Power Dissipation  
PD  
TO-251/TO-251S  
TO-251S2/ TO-251S4  
TO-252/TO-252D  
TO-126  
50  
W
45  
W
°С  
°С  
°С  
Junction Temperature  
Operating Temperature  
Storage Temperature  
TJ  
+150  
TOPR  
TSTG  
-55 ~ +150  
-55 ~ +150  
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2. Repetitive Rating : Pulse width limited by maximum junction temperature  
3. L=18.75mH, IAS=4A, VDD=50V, RG=25 Ω, Starting TJ = 25°C  
4. ISD≤4.4A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C  
THERMAL DATA  
PARAMETER  
TO-220/TO-220F  
SYMBOL  
RATINGS  
62.5  
UNIT  
°C/W  
TO-220F1/TO-220F2  
TO-220F3/TO-262  
TO-251/TO-251S  
TO-251S2/ TO-251S4  
TO-252/TO-252D  
TO-126  
Junction to Ambient  
θJA  
110  
°C/W  
89  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
TO-220  
1.18  
3.47  
3.67  
3.57  
TO-220F/TO-220F1  
TO-220F3  
TO-220F2  
Junction to Case  
θJC  
TO-251/TO-251S  
TO-251S2/ TO-251S4  
TO-252/TO-252D  
TO-262  
2.5  
°C/W  
1.18  
2.7  
°C/W  
°C/W  
TO-126  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 7  
QW-R205-039.b  
www.unisonic.com.tw  
4N65K-TA  
Preliminary  
Power MOSFET  
ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
Drain-Source Leakage Current  
BVDSS  
IDSS  
VGS = 0 V, ID = 250μA  
650  
V
VDS = 650 V, VGS = 0 V  
VGS = 30 V, VDS = 0 V  
10  
μA  
Forward  
Reverse  
100 nA  
-100 nA  
V/°С  
Gate-Source Leakage Current  
IGSS  
VGS = -30 V, VDS = 0 V  
ID=250μA, Referenced to 25°C  
△BVDSS/△TJ  
Breakdown Voltage Temperature Coefficient  
ON CHARACTERISTICS  
Gate Threshold Voltage  
Static Drain-Source On-State Resistance  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
0.6  
VGS(TH)  
RDS(ON)  
VDS = VGS, ID = 250μA  
3.0  
5.0  
2.8  
V
VGS = 10 V, ID = 2.2A  
Ω
CISS  
COSS  
CRSS  
320 520 pF  
VDS = 25 V, VGS = 0V,  
Output Capacitance  
50  
5
75  
10  
pF  
pF  
f = 1MHz  
Reverse Transfer Capacitance  
SWITCHING CHARACTERISTICS  
Total Gate Charge  
QG  
QGS  
QGD  
tD(ON)  
tR  
14  
5
18  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
V
V
DS = 50V, ID= 1.3A,  
GS = 10V (Note 1, 2)  
Gate-Source Charge  
Gate-Drain Charge  
2.8  
48  
45  
74  
34  
Turn-On Delay Time  
68  
56  
90  
45  
Turn-On Rise Time  
VDD = 30V, ID = 0.5A,  
RG = 25Ω (Note 1, 2)  
Turn-Off Delay Time  
tD(OFF)  
tF  
Turn-Off Fall Time  
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS  
Drain-Source Diode Forward Voltage  
Maximum Continuous Drain-Source Diode  
Forward Current  
VSD  
VGS = 0 V, IS = 4.4A  
1.4  
4.4  
V
A
IS  
Maximum Pulsed Drain-Source Diode  
Forward Current  
ISM  
17.6  
A
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%  
2. Essentially independent of operating temperature  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 7  
QW-R205-039.b  
www.unisonic.com.tw  
4N65K-TA  
Preliminary  
Power MOSFET  
TEST CIRCUITS AND WAVEFORMS  
Peak Diode Recovery dv/dt Test Circuit  
P. W.  
Period  
VGS  
(Driver)  
Period  
D=  
P.W.  
10V  
=
VGS  
IFM, Body Diode Forward Current  
ISD  
(D.U.T.)  
di/dt  
IRM  
Body Diode Reverse Current  
Body Diode Recovery dv/dt  
VDS  
VDD  
(D.U.T.)  
Body Diode  
Forward Voltage Drop  
Peak Diode Recovery dv/dt Waveforms  
UNISONIC TECHNOLOGIES CO., LTD  
5 of 7  
QW-R205-039.b  
www.unisonic.com.tw  
4N65K-TA  
Preliminary  
Power MOSFET  
TEST CIRCUITS AND WAVEFORMS (Cont.)  
RL  
VDS  
VDD  
VGS  
RG  
D.U.T.  
10V  
Pulse Width≤ 1μs  
Duty Factor≤0.1%  
Switching Test Circuit  
Switching Waveforms  
Gate Charge Test Circuit  
Gate Charge Waveform  
BVDSS  
IAS  
ID(t)  
VDS(t)  
VDD  
Time  
Unclamped Inductive Switching Waveforms  
tp  
Unclamped Inductive Switching Test Circuit  
UNISONIC TECHNOLOGIES CO., LTD  
6 of 7  
QW-R205-039.b  
www.unisonic.com.tw  
4N65K-TA  
Preliminary  
Power MOSFET  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
7 of 7  
QW-R205-039.b  
www.unisonic.com.tw  
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