AMS-IRDK250-08
Specifications Sheet
Electrical characteristics:
Symbol
IRRM
Parameter
Test condition
VD=VDRM, sine half wave, Tjm
IFM =1000A, Tj=25 C
Rating
20
Unit
mA
V
Peak off-state repetitive current
Peak forward voltage
VFM
1.4
Rth(j-c)
Thermal resistance junction-case
Single-side heat dissipation, sine half wave
0.14
C/W
On-state current vs voltage characteristic
Transient thermal impedance (junction-case)
On-state peak current (A)
Time (s)
I2t Characteristic
On-state surge current vs cycles
Cycles @50Hz
Time (ms)
American Microsemiconductor Inc.
133 Kings Road, Madison, NJ 07940
Tel. 973-377-9566 fax. 973-377-3078
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AS/EN/JISQ/ 9100:2009 REV C and ISO 9001:2008 Certificate No: 45325
http://www.americanmicrosemiconductor.com
