5N70Z
Power MOSFE
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BVDSS
ID=250µA, VGS=0V
700
V
∆BVDSS/∆TJ Reference to 25°C, ID=250µA
DS=700V, VGS=0V
VDS=560V, VGS=0V, TC=125°C
GS=+20V, VDS=0V
0.18
V/°C
V
1
µA
µA
Drain-Source Leakage Current
IDSS
IGSS
10
Forward
Reverse
V
+10 µA
-10 µA
Gate-Source Leakage Current
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=2.5A
2
4
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
2.15 2.5
Ω
CISS
COSS
CRSS
420 625 pF
Output Capacitance
VGS=0V, VDS=25V, f=1.0MHz
55
9
65
12
pF
pF
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Rise Time
tD(ON)
tR
tD(OFF)
tF
40
42
60
60
ns
ns
VDD=30V, ID=0.5A, RG=25Ω
(Note 1, 2)
Turn-OFF Delay Time
Fall-Time
135 155 ns
48
70
20
15
60
ns
Total Gate Charge
QG
90 nC
nC
VGS=5V, VDS=160V, ID=4.5A
(Note 1, 2)
Gate to Source Charge
Gate to Drain Charge
QGS
QGD
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
IS
ISM
VSD
trr
5
A
A
20
1.4
IS=5A, VGS=0V
V
95
ns
µC
IS=4.5A, VGS=0V, dIF/dt=100A/µs
(Note 1)
QRR
0.3
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
4 of 7
QW-R502-911. D
www.unisonic.com.tw
