4N60Z-E
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS = 0V, ID = 250μA
VDS = 600V, VGS = 0V
VGS = 20V, VDS = 0V
600
V
μA
10
5
Forward
Reverse
μA
Gate-Source Leakage Current
IGSS
VGS = -20V, VDS = 0V
ID=250μA,Referenced to 25°C
-5
μA
△BVDSS/△TJ
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
0.6
V/°С
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
2.0
4.0
V
VGS = 10 V, ID = 2.2A
2.0 2.5
Ω
CISS
COSS
CRSS
550 680 pF
Output Capacitance
VDS = 25V, VGS = 0V, f = 1MHz
60
80
pF
pF
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
12.5 16
tD(ON)
tR
tD(OFF)
tF
50
70
ns
Turn-On Rise Time
260 280 ns
145 160 ns
300 320 ns
VDD=30V, VGS=0~10V, ID=0.5A
RG = 25Ω (Note 1, 2)
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
QG
60
15
18
80
nC
nC
nC
VDD= 50V, VDS=10V, ID= 1.3A,
IG= 100μA, VGS= 10V
(Note 1, 2)
Gate-Source Charge
QGS
QGD
Gate-Drain Charge
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS = 0V, IS = 4.4A
1.4
4.4
V
A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
17.6
A
Reverse Recovery Time
trr
250
1.5
ns
VGS = 0 V, IS = 4.4A,
dIF/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
QRR
μC
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-A22. A
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