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4N70G-T2Q-T

型号：

4N70G-T2Q-T

品牌：

UTC[ Unisonic Technologies ]

页数：

7 页

PDF大小：

269 K

下载PDF手册
UNISONIC TECHNOLOGIES CO., LTD  
4N70  
Power MOSFET  
4.4A, 700V N-CHANNEL  
POWER MOSFET  
1
1
1
TO-220  
TO-220F  
DESCRIPTION  
The UTC 4N70 is a high voltage power MOSFET and is  
designed to have better characteristics, such as fast switching  
time, low gate charge, low on-state resistance and high rugged  
avalanche. This high speed switching power MOSFET is usually  
used in power supplies, PWM motor controls, high efficient DC to  
DC converters and bridge circuits.  
1
TO-252  
TO-220F1  
FEATURES  
1
1
* RDS(ON) < 2.8Ω @VGS = 10 V  
* Ultra Low Gate Charge ( Typical 15nC )  
* Low Reverse Transfer Capacitance ( CRSS = Typical 8.0 pF )  
* Fast Switching Capability  
TO-262  
TO-251  
* Avalanche Energy Specified  
* Improved dv/dt Capability, High Ruggedness  
SYMBOL  
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Lead Free  
Halogen Free  
1
2
3
S
S
S
S
S
S
4N70L-TA3-T  
4N70L-TF1-T  
4N70L-TF3-T  
4N70L-TM3-T  
4N70L-TN3-R  
4N70L-T2Q-T  
4N70G-TA3-T  
4N70G-TF1-T  
4N70G-TF3-T  
4N70G-TM3-T  
4N70G-TN3-R  
4N70G-T2Q-T  
TO-220  
TO-220F1  
TO-220F  
TO-251  
G
G
G
G
G
G
D
D
D
D
D
D
Tube  
Tube  
Tube  
Tube  
TO-252  
Tape Reel  
Tube  
TO-262  
Note: Pin Assignment: G: Gate  
D: Drain  
S: Source  
www.unisonic.com.tw  
1 of 7  
Copyright © 2014 Unisonic Technologies Co., Ltd  
QW-R502-340.G  
4N70  
Power MOSFET  
MARKING INFORMATION  
PACKAGE  
MARKING  
TO-220  
TO-220F  
TO-220F1  
TO-251  
TO-252  
TO-262  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 7  
QW-R502-340.G  
www.unisonic.com.tw  
4N70  
Power MOSFET  
ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified)  
PARAMETER  
SYMBOL  
VDSS  
VGSS  
IAR  
RATINGS  
700  
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage  
±30  
V
Avalanche Current (Note 2)  
4.4  
A
Continuous  
ID  
4.4  
A
Drain Current  
Pulsed (Note 2)  
Single Pulsed (Note 3)  
Repetitive (Note 2)  
IDM  
17.6  
A
EAS  
260  
mJ  
mJ  
V/ns  
Avalanche Energy  
EAR  
10.6  
Peak Diode Recovery dv/dt (Note 4)  
TO-220/TO-262  
dv/dt  
4.5  
106  
Power Dissipation  
TO-220F/TO-220F1  
TO-251/ TO-252  
PD  
36  
W
49  
Junction Temperature  
Operating Temperature  
Storage Temperature  
TJ  
+150  
-55 ~ +150  
-55 ~ +150  
°С  
°С  
°С  
TOPR  
TSTG  
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2. Repetitive Rating : Pulse width limited by maximum junction temperature  
3. L = 26.9mH, IAS = 4.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C  
4. ISD≤ 4.4A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C  
THERMAL DATA  
PARAMETER  
TO-220/TO-220F  
SYMBOL  
RATINGS  
62.5  
UNIT  
TO-220F1/TO-262  
TO-251/ TO-252  
TO-220/TO-262  
TO-220F/TO-220F1  
TO-251/ TO-252  
Junction to Ambient  
Junction to Case  
θJA  
°С/W  
110  
1.18  
3.47  
2.55  
θJC  
°С/W  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 7  
QW-R502-340.G  
www.unisonic.com.tw  
4N70  
Power MOSFET  
ELECTRICAL CHARACTERISTICS (TA =25°С, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
Drain-Source Leakage Current  
BVDSS  
IDSS  
VGS = 0 V, ID = 250 μA  
VDS = 700 V, VGS = 0 V  
VGS = 30 V, VDS = 0 V  
700  
V
10 μA  
Forward  
Reverse  
100  
nA  
Gate-Source Leakage Current  
IGSS  
VGS = -30 V, VDS = 0 V  
ID = 250μA, Referenced to 25°C  
-100  
△BVDSS/△TJ  
Breakdown Voltage Temperature Coefficient  
ON CHARACTERISTICS  
Gate Threshold Voltage  
Static Drain-Source On-State Resistance  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
0.6  
V/°С  
VGS(TH)  
RDS(ON)  
VDS = VGS, ID = 250 μA  
2.0  
4.0  
2.6 2.8  
V
VGS = 10 V, ID = 2.2 A  
Ω
CISS  
COSS  
CRSS  
520 670 pF  
70 90 pF  
VDS = 25 V, VGS = 0 V,  
f = 1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
SWITCHING CHARACTERISTICS  
Turn-On Delay Time  
8
11 pF  
tD(ON)  
tR  
tD(OFF)  
tF  
13 35  
ns  
Turn-On Rise Time  
45 100 ns  
VDD = 350V, ID = 4.4A,  
RG = 25Ω (Note 1, 2)  
Turn-Off Delay Time  
25 60  
35 80  
ns  
ns  
Turn-Off Fall Time  
Total Gate Charge  
QG  
15 20 nC  
VDS= 560V, ID= 4.4A,  
Gate-Source Charge  
QGS  
QGD  
3.4  
7.1  
nC  
nC  
VGS= 10 V (Note 1, 2)  
Gate-Drain Charge  
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS  
Drain-Source Diode Forward Voltage  
Maximum Continuous Drain-Source Diode  
Forward Current  
VSD  
VGS = 0 V, IS = 4.4 A  
1.4  
4.4  
V
A
IS  
Maximum Pulsed Drain-Source Diode  
Forward Current  
ISM  
17.6  
A
Reverse Recovery Time  
trr  
250  
1.5  
ns  
VGS = 0 V, IS = 4.4 A,  
dI/dt = 100 A/μs (Note 1)  
Reverse Recovery Charge  
QRR  
μC  
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%  
2. Essentially independent of operating temperature  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 7  
QW-R502-340.G  
www.unisonic.com.tw  
4N70  
Power MOSFET  
TEST CIRCUITS AND WAVEFORMS  
Peak Diode Recovery dv/dt Test Circuit  
P. W.  
Period  
VGS  
(Driver)  
Period  
D=  
P.W.  
10V  
VGS=  
IFM, Body Diode Forward Current  
ISD  
(D.U.T.)  
di/dt  
IRM  
Body Diode Reverse Current  
Body Diode Recovery dv/dt  
VDS  
VDD  
(D.U.T.)  
Body Diode  
Forward Voltage Drop  
Peak Diode Recovery dv/dt Waveforms  
UNISONIC TECHNOLOGIES CO., LTD  
5 of 7  
QW-R502-340.G  
www.unisonic.com.tw  
4N70  
Power MOSFET  
TEST CIRCUITS AND WAVEFORMS (Cont.)  
Switching Test Circuit  
Switching Waveforms  
Gate Charge Test Circuit  
Gate Charge Waveform  
Unclamped Inductive Switching Test Circuit  
Unclamped Inductive Switching Waveforms  
UNISONIC TECHNOLOGIES CO., LTD  
6 of 7  
QW-R502-340.G  
www.unisonic.com.tw  
4N70  
Power MOSFET  
TYPICAL CHARACTERISTICS  
Drain Current vs. Drain-Source  
Breakdown Voltage  
Drain Current vs.  
Gate Threshold Voltage  
300  
250  
200  
150  
100  
50  
300  
250  
200  
150  
100  
50  
0
0
0
200 400 600 800 1000 1200 1400  
1
0
2
3
4
5
6
7
Drain-Source Breakdown Voltage, BVDSS(V)  
Gate Threshold Voltage, VTH (V)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
7 of 7  
QW-R502-340.G  
www.unisonic.com.tw  
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