4N70
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
700
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±30
V
Avalanche Current (Note 2)
4.4
A
Continuous
ID
4.4
A
Drain Current
Pulsed (Note 2)
IDM
17.6
A
Single Pulsed (Note 3)
Repetitive (Note 2)
EAS
260
mJ
mJ
V/ns
Avalanche Energy
EAR
10.6
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
TO-220F/TO-220F1
TO-251
36
Power Dissipation
PD
W
49
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
-55 ~ +150
-55 ~ +150
°С
°С
°С
TOPR
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 26.9mH, IAS = 4.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤ 4.4A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
TO-220F/TO-220F1
TO-251
Junction to Ambient
Junction to Case
θJA
°С/W
110
TO-220F/TO-220F1
TO-251
3.47
θJc
°С/W
2.55
ELECTRICAL CHARACTERISTICS (TA =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS = 0 V, ID = 250 μA
VDS = 700 V, VGS = 0 V
VGS = 30 V, VDS = 0 V
700
V
10 μA
Forward
Reverse
100
nA
Gate-Source Leakage Current
IGSS
VGS = -30 V, VDS = 0 V
ID = 250μA, Referenced to 25°C
-100
△BVDSS/△TJ
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
0.6
V/°С
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250 μA
2.0
4.0
2.6 2.8
V
VGS = 10 V, ID = 2.2 A
Ω
CISS
COSS
CRSS
520 670 pF
70 90 pF
VDS = 25 V, VGS = 0 V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
8
11 pF
tD(ON)
tR
tD(OFF)
tF
13 35
ns
Turn-On Rise Time
45 100 ns
VDD = 350V, ID = 4.4A,
RG = 25Ω (Note 1, 2)
Turn-Off Delay Time
25 60
35 80
ns
ns
Turn-Off Fall Time
Total Gate Charge
QG
15 20 nC
VDS= 560V, ID= 4.4A,
Gate-Source Charge
QGS
QGD
3.4
7.1
nC
nC
VGS= 10 V (Note 1, 2)
Gate-Drain Charge
UNISONIC TECHNOLOGIES CO., LTD
2 of 6
QW-R502-340.D
www.unisonic.com.tw
