请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXTY1R4N120P

型号：

IXTY1R4N120P

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

368 K

下载PDF手册
PolarTM  
Power MOSFET  
IXTY1R4N120PHV  
IXTY1R4N120P  
IXTA1R4N120P  
IXTP1R4N120P  
VDSS = 1200V  
ID25 = 1.4A  
RDS(on) 13  
TO-252  
(IXTY..HV)  
N-Channel Enhancement Mode  
Avalanche Rated  
G
S
D (Tab)  
TO-252  
(IXTY)  
G
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
1200  
1200  
V
D (Tab)  
VDGR  
TJ = 25C to 150C, RGS = 1M  
V
TO-263  
(IXTA)  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
S
ID25  
IDM  
TC = 25C  
1.4  
3.0  
A
A
D (Tab)  
TC = 25C, Pulse Width Limited by TJM  
TO-220  
(IXTP)  
IA  
TC = 25C  
TC = 25C  
1.4  
A
EAS  
150  
mJ  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
10  
86  
V/ns  
W
G
D
S
TJ  
-55 ... +150  
150  
C  
C  
C  
D (Tab)  
TJM  
Tstg  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Features  
International Standard Packages  
Low QG  
Avalanche Rated  
Low Package Inductance  
Fast Intrinsic Rectifier  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
Weight  
TO-252 / HV  
TO-263  
TO-220  
0.35  
2.50  
3.00  
g
g
g
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 100μA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
1200  
V
Applications  
2.5  
4.5  
V
DC-DC Converters  
Switch-Mode and Resonant-Mode  
100 nA  
A  
Power Supplies  
AC and DC Motor Drives  
IDSS  
5
Discharge Circiuts in Lasers, Spark  
Igniters, RF Generators  
TJ = 125C  
300 A  
  
High Voltage Pulse Power  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2  
10.5  
13.0   
Applications  
DS99871E(6/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTY1R4N120PHV IXTA1R4N120P  
IXTY1R4N120P  
IXTP1R4N120P  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
0.8  
1.3  
S
Ciss  
Coss  
Crss  
666  
36  
pF  
pF  
pF  
7.6  
Qg(on)  
Qgs  
24.8  
4.4  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
12.8  
td(on)  
tr  
td(off)  
tf  
25  
27  
78  
29  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 25(External)  
RthJC  
RthCS  
1.45 C/W  
C/W  
TO-220  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
1.4  
A
A
ISM  
VSD  
trr  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
4.2  
1.5  
V
IF = 1.4A, -di/dt = 100A/μs, VR = 100V  
900  
ns  
Notes: 1. Pulse test, t 300s, duty cycle, d  2%.  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5mm or less from the package body.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXTY1R4N120PHV IXTA1R4N120P  
IXTY1R4N120P IXTP1R4N120P  
Fig. 2. Output Characteristics @ TJ = 125oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
2.2  
2
1.4  
V
= 10V  
7V  
GS  
V
= 10V  
6V  
GS  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
1.8  
1.6  
1.4  
1.2  
1
6V  
5V  
0.8  
0.6  
0.4  
0.2  
0
5V  
0
5
10  
15  
20  
25  
30  
150  
150  
0
5
10  
15  
20  
25  
30  
35  
40  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 0.7A Value vs.  
Drain Current  
Fig. 3. RDS(on) Normalized to ID = 0.7A Value vs.  
Junction Temperature  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
V
= 10V  
GS  
T
= 125oC  
V
= 10V  
GS  
J
I
= 1.4A  
D
I
= 0.7A  
D
T
= 25oC  
J
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
2
2.2  
-50  
-25  
0
25  
50  
75  
100  
125  
ID - Amperes  
TJ - Degrees Centigrade  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
Fig. 5. Maximum Drain Current vs. Case Temperature  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
BV  
DSS  
V
GS(th)  
100  
-60  
-40  
-20  
0
20  
40  
60  
80  
120  
140  
160  
-50  
-25  
0
25  
50  
75  
100  
125  
TJ - Degrees Centigrade  
TC - Degrees Centigrade  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTY1R4N120PHV IXTA1R4N120P  
IXTY1R4N120P IXTP1R4N120P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
2.0  
1.5  
1.0  
0.5  
0.0  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
T
= - 40oC  
J
25oC  
125oC  
T
J
= 125oC  
25oC  
- 40oC  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
0.9  
40  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
2
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
10  
9
8
7
6
5
4
3
2
1
0
V
= 600V  
DS  
I
I
= 0.7A  
D
G
= 10mA  
T
J
= 125oC  
T
= 25oC  
J
0
4
8
12  
16  
20  
24  
0.4  
0.45  
0.5  
0.55  
0.6  
0.65  
0.7  
0.75  
0.8  
0.85  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Maximum Transient Thermal Impedance  
Fig. 11. Capacitance  
10  
10,000  
1,000  
100  
10  
f
= 1 MHz  
C
iss  
1
C
oss  
0.1  
C
rss  
1
0.01  
0
5
10  
15  
20  
25  
30  
35  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTY1R4N120PHV IXTA1R4N120P  
IXTY1R4N120P  
IXTP1R4N120P  
TO-252 AA Outline  
TO-263 Outline  
TO-220 Outline  
A
E
b3  
A
C2  
E
E1  
c2  
L3  
A
E
oP  
4
A1  
L1  
D1  
D
H1  
A1  
A2  
4
Q
L2  
H
H
A1  
L4  
1
3
2
1
2
3
D2  
E1  
D
L1  
b2  
L
c
b2  
b
L3  
c
D1  
1 - Gate  
2,4 - Drain  
3 - Source  
e
e
e
0.43 [11.0]  
L2  
e1  
e1  
0  
0
A2  
5.55MIN  
OPTIONAL  
EJECTOR  
PIN  
0.34 [8.7]  
L1  
0.66 [16.6]  
A2  
L
6.50MIN  
4
1 - Gate  
2,4 - Drain  
3 - Source  
0.20 [5.0]  
0.12 [3.0]  
0.06 [1.6]  
6.40  
2.28  
3X b  
3X b2  
e
c
0.10 [2.5]  
2.85MIN  
1.25MIN  
e1  
BOTTOM  
VIEW  
1 - Gate  
2,4 - Drain  
3 - Source  
LAND PATTERN RECOMMENDATION  
TO-252HV Outline  
1 - Gate  
2 - Source  
3 - Drain  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_3N60P(2J) 6-20-17-A  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
厂商 型号 描述 页数 下载

IXYS

 		IXTA-200N085T N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ] 5 页

LITTELFUSE

 		IXTA02N250 [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN ] 5 页

IXYS

 		IXTA02N250HV [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 ] 5 页

LITTELFUSE

 		IXTA02N250HV [ Power Field-Effect Transistor, ] 6 页

IXYS

 		IXTA02N250HV-TRL [ Power Field-Effect Transistor, ] 5 页

IXYS

 		IXTA02N450HV 高电压功率MOSFET[ High Voltage Power MOSFETs ] 5 页

IXYS

 		IXTA05N100 高电压的MOSFET[ High Voltage MOSFET ] 4 页

IXYS

 		IXTA05N100-TRL [ Power Field-Effect Transistor, ] 5 页

LITTELFUSE

 		IXTA05N100HVTRL [ Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN ] 4 页

IXYS

 		IXTA05N100P [ Fast Intrinsic Diode ] 7 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.174625s