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4N65ZL-TF3-T

型号：

4N65ZL-TF3-T

品牌：

UTC[ Unisonic Technologies ]

页数：

8 页

PDF大小：

339 K

下载PDF手册
UNISONIC TECHNOLOGIES CO., LTD  
4N65Z  
Power MOSFET  
4A, 650V N-CHANNEL  
POWER MOSFET  
„
DESCRIPTION  
The UTC 4N65Z is a high voltage power MOSFET designed to  
have better characteristics, such as fast switching time, low gate  
charge, low on-state resistance and have a high rugged avalanche  
characteristic. This power MOSFET is usually used in high speed  
switching applications including power supplies, PWM motor  
controls, high efficient DC to DC converters and bridge circuits.  
1
TO-220F  
„
FEATURES  
* RDS(ON) = 2.5Ω @VGS = 10 V  
* Ultra Low Gate Charge ( typical 15 nC )  
* Low Reverse Transfer Capacitance ( CRSS = Typical 8.0 pF )  
* Fast Switching Capability  
* Avalanche Energy Specified  
* Improved dv/dt Capability, High Ruggedness  
„
SYMBOL  
„
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
TO-220F  
Packing  
3
Lead Free  
Halogen Free  
4N65ZG-TF3-T  
1
2
4N65ZL- TF3-T  
G
D
S
Tube  
Note: Pin Assignment: G: Gate D: Drain S: Source  
www.unisonic.com.tw  
1 of 8  
Copyright © 2012 Unisonic Technologies Co., Ltd  
QW-R502-778.A  
4N65Z  
Power MOSFET  
„
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)  
PARAMETER  
SYMBOL  
VDSS  
VGSS  
IAR  
RATINGS  
650  
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage  
±30  
V
Avalanche Current (Note 2)  
4.4  
A
Continuous  
ID  
4.0  
A
Drain Current  
Pulsed (Note 2)  
Single Pulsed (Note 3)  
Repetitive (Note 2)  
IDM  
16  
A
EAS  
260  
mJ  
mJ  
V/ns  
W
Avalanche Energy  
EAR  
10.6  
Peak Diode Recovery dv/dt (Note 4)  
Power Dissipation  
dv/dt  
PD  
4.5  
36  
Junction Temperature  
TJ  
+150  
-55 ~ +150  
-55 ~ +150  
°С  
°С  
°С  
Operating Temperature  
Storage Temperature  
TOPR  
TSTG  
Note:  
1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2. Repetitive Rating : Pulse width limited by maximum junction temperature  
3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C  
4. ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C  
„
THERMAL DATA  
PARAMETER  
SYMBOL  
θJA  
RATINGS  
62.5  
UNIT  
°С/W  
°С/W  
Junction to Ambient  
Junction to Case  
θJc  
3.47  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 8  
QW-R502-778.A  
www.unisonic.com.tw  
4N65Z  
Power MOSFET  
„
ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
Drain-Source Leakage Current  
BVDSS  
IDSS  
VGS = 0 V, ID = 250μA  
650  
V
VDS = 650 V, VGS = 0 V  
VGS = 30 V, VDS = 0 V  
10  
μA  
Forward  
Reverse  
100 nA  
-100 nA  
V/°С  
Gate-Source Leakage Current  
IGSS  
VGS = -30 V, VDS = 0 V  
ID=250μA, Referenced to 25°C  
△BVDSS/△TJ  
Breakdown Voltage Temperature Coefficient  
ON CHARACTERISTICS  
Gate Threshold Voltage  
Static Drain-Source On-State Resistance  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
0.6  
VGS(TH)  
RDS(ON)  
VDS = VGS, ID = 250μA  
2.0  
4.0  
2.4 2.5  
V
VGS = 10 V, ID = 2.2A  
Ω
CISS  
COSS  
CRSS  
520 670 pF  
VDS = 25 V, VGS = 0V,  
f = 1MHz  
Output Capacitance  
70  
8
90  
11  
pF  
pF  
Reverse Transfer Capacitance  
SWITCHING CHARACTERISTICS  
Turn-On Delay Time  
tD(ON)  
tR  
tD(OFF)  
tF  
13  
35  
ns  
Turn-On Rise Time  
45 100 ns  
VDD = 325V, ID = 4.0A,  
RG = 25Ω (Note 1, 2)  
Turn-Off Delay Time  
25  
35  
60  
80  
20  
ns  
ns  
Turn-Off Fall Time  
Total Gate Charge  
QG  
15  
nC  
nC  
nC  
VDS= 520V,ID= 4.0A,  
Gate-Source Charge  
QGS  
QGD  
3.4  
7.1  
VGS= 10V (Note 1, 2)  
Gate-Drain Charge  
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS  
Drain-Source Diode Forward Voltage  
Maximum Continuous Drain-Source Diode  
Forward Current  
VSD  
VGS = 0 V, IS = 4.4A  
1.4  
4.4  
V
A
IS  
Maximum Pulsed Drain-Source Diode  
Forward Current  
ISM  
17.6  
A
Reverse Recovery Time  
trr  
250  
1.5  
ns  
V
GS = 0V, IS = 4.4A,  
dIF/dt = 100 A/μs (Note 1)  
Reverse Recovery Charge  
QRR  
μC  
Note: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%  
2. Essentially independent of operating temperature  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 8  
QW-R502-778.A  
www.unisonic.com.tw  
4N65Z  
Power MOSFET  
„
TEST CIRCUITS AND WAVEFORMS  
+
D.U.T.  
VDS  
-
+
-
L
RG  
Driver  
VDD  
* dv/dt controlled by RG  
* ISD controlled by pulse period  
* D.U.T.-Device Under Test  
Same Type  
as D.U.T.  
VGS  
Peak Diode Recovery dv/dt Test Circuit  
P. W.  
Period  
VGS  
(Driver)  
Period  
D=  
P.W.  
10V  
=
VGS  
IFM, Body Diode Forward Current  
ISD  
(D.U.T.)  
di/dt  
IRM  
Body Diode Reverse Current  
Body Diode Recovery dv/dt  
VDS  
VDD  
(D.U.T.)  
Body Diode  
Forward Voltage Drop  
Peak Diode Recovery dv/dt Waveforms  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 8  
QW-R502-778.A  
www.unisonic.com.tw  
4N65Z  
Power MOSFET  
„
TEST CIRCUITS AND WAVEFORMS (Cont.)  
RL  
VDS  
VDD  
VGS  
RG  
D.U.T.  
10V  
Pulse Width≤ 1μs  
Duty Factor≤0.1%  
Switching Test Circuit  
Switching Waveforms  
Gate Charge Test Circuit  
Gate Charge Waveform  
BVDSS  
IAS  
ID(t)  
VDS(t)  
VDD  
Time  
Unclamped Inductive Switching Waveforms  
tp  
Unclamped Inductive Switching Test Circuit  
UNISONIC TECHNOLOGIES CO., LTD  
5 of 8  
QW-R502-778.A  
www.unisonic.com.tw  
4N65Z  
Power MOSFET  
„
TYPICAL CHARACTERISTICS  
Breakdown Voltage Variation vs.  
Temperature  
On-Resistance Junction Temperature  
3.0  
2.5  
2.0  
1.5  
1.2  
1.1  
1.0  
1.0  
Note:  
1. VGS=10V  
2. ID=4A  
0.9  
0.8  
Note:  
1. VGS=0V  
2. ID=250µA  
0.5  
0.0  
200  
0
-50  
200  
-100  
-50  
50  
100  
150  
-100  
0
50  
100  
150  
Junction Temperature, TJ (°С)  
Junction Temperature, TJ (°С)  
On-State Characteristics  
Transfer Characteristics  
VGS  
Top: 10V  
10  
10  
9V  
8V  
7V  
6V  
5.5V  
5 V Bottorm:5.0V  
25°С  
1
5.0V  
150°С  
1
0.1  
Notes:  
Notes:  
1. VDS=50V  
2. 250µs Pulse Test  
1. 250µs Pulse Test  
2. TC=25°С  
0.1  
2
4
6
8
10  
0.1  
1
10  
Gate-Source Voltage, VGS (V)  
Drain-to-Source Voltage, VDS (V)  
UNISONIC TECHNOLOGIES CO., LTD  
6 of 8  
QW-R502-778.A  
www.unisonic.com.tw  
4N65Z  
Power MOSFET  
„
TYPICAL CHARACTERISTICS(Cont.)  
Capacitance Characteristics  
(Non-Repetitive)  
Gate Charge Characteristics  
12  
10  
8
1200  
Ciss=Cgs+Cgd (Cds=shorted)  
Coss=Cds+Cgd Crss=Cgd  
VDS=300V  
VDS=480V  
1000  
800  
Ciss  
Notes:  
1. VGS=0V  
VDS=120V  
Coss  
6
600  
400  
200  
2. f = 1MHz  
4
2
Crss  
Note: ID=4A  
10  
Total Gate Charge, QG (nC)  
0
0
0.1  
20  
25  
0
5
15  
1
10  
Drain-SourceVoltage, VDS (V)  
UNISONIC TECHNOLOGIES CO., LTD  
7 of 8  
QW-R502-778.A  
www.unisonic.com.tw  
4N65Z  
Power MOSFET  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
8 of 8  
QW-R502-778.A  
www.unisonic.com.tw  
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