请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXTA340N04T4

型号：

IXTA340N04T4

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

213 K

下载PDF手册
Preliminary Technical Information  
TrenchT4TM  
Power MOSFET  
VDSS = 40V  
ID25 = 340A  
RDS(on) 1.7m  
IXTA340N04T4  
IXTA340N04T4-7  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Rectifier  
TO-263 AA  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 175C  
40  
40  
V
V
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
VDGR  
TJ = 25C to 175C, RGS = 1M  
VGSM  
Transient  
15  
V
TO-263 (7-Leads)  
ID25  
ILRMS  
TC = 25C  
Lead Current Limit, RMS  
340  
160  
A
A
IDM  
TC = 25C, Pulse Width Limited by TJM  
750  
A
1
IA  
TC = 25C  
TC = 25C  
170  
1.2  
A
J
7
EAS  
(Tab)  
IA  
TC = 25C  
TC = 25C  
340  
500  
A
Pins: 1 - Gate  
EAS  
mJ  
2, 3, 5 , 6 , 7 - Source  
4 (Tab) - Drain  
PD  
TC = 25C  
480  
W
TJ  
-55 ... +175  
175  
C  
C  
C  
TJM  
Tstg  
-55 ... +175  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
International Standard Packages  
175°C Operating Temperature  
High Current Handling Capability  
Avalanche Rated  
FC  
Mounting Force  
10..65 / 2.2..14.6  
N/lb  
Weight  
TO-263  
TO-263 (7Leads)  
2.5  
3.0  
g
g
Fast Intrinsic Rectifier  
Low RDS(on)  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min. Typ.  
Max.  
Advantages  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250A  
VDS = VGS, ID = 250A  
VGS = 15V, VDS = 0V  
VDS = VDSS, VGS = 0V  
40  
V
V
Easy to Mount  
Space Savings  
High Power Density  
2.0  
4.0  
            200 nA  
A  
IDSS  
5
Applications  
TJ = 150C  
VGS = 10V, ID = 100A, Notes 1, 2  
750 A  
1.7 m  
RDS(on)  
DC-DC Converters & Off-Line UPS  
Primary-Side Switch  
High Current Switching Applications  
DS100700B(03/16)  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXTA340N04T4  
IXTA340N04T4-7  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
(TJ = 25C, Unless Otherwise Specified)  
gfs  
VDS = 10V, ID = 60A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
115  
195  
S
Ciss  
Coss  
Crss  
13  
1850  
1226  
nF  
pF  
pF  
RGi  
Gate Input Resistance  
1.1  
td(on)  
tr  
td(off)  
tf  
23  
55  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
113  
40  
RG = 3(External)  
Qg(on)  
Qgs  
256  
64  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
86  
RthJC  
0.31 C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
IS  
VGS = 0V  
340  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
IF = 150A, VGS = 0V,  
1360  
1.4  
trr  
43  
10  
ns  
A
-di/dt = 100A/s,  
VR = 30V  
IRM  
QRM  
210  
nC  
Notes: 1. Pulse test, t 300s, duty cycle, d  2%.  
2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm  
or less from the package body.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTA340N04T4  
IXTA340N04T4-7  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
350  
300  
250  
200  
150  
100  
50  
350  
300  
250  
200  
150  
100  
50  
V
= 10V  
GS  
V
= 15V  
10V  
GS  
7V  
8V  
7V  
6.5V  
6.5V  
6V  
5V  
6V  
5V  
0
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
0
1
2
3
4
5
6
7
8
9
10  
VDS - Volts  
VDS - Volts  
Fig. 4. Normalized RDS(on) to ID = 170A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
300  
250  
200  
150  
100  
50  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 15V  
GS  
V
= 10V  
GS  
10V  
9V  
8V  
7V  
6V  
I
D
= 340A  
I
D
= 170A  
5V  
4V  
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. Normalized RDS(on) to ID = 170A  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
180  
160  
140  
120  
100  
80  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
External Lead Current Limit  
T = 175ºC  
J
V
= 10V  
15V  
GS  
60  
T = 25ºC  
J
40  
20  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
50  
100  
150  
200  
250  
300  
350  
TC - Degrees Centigrade  
ID - Amperes  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXTA340N04T4  
IXTA340N04T4-7  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
450  
400  
350  
300  
250  
200  
150  
100  
50  
160  
140  
120  
100  
80  
T
J
= - 40ºC  
V
= 10V  
V
= 10V  
DS  
DS  
25ºC  
150ºC  
T
J
= 150ºC  
60  
25ºC  
- 40ºC  
40  
20  
0
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
ID - Amperes  
VGS - Volts  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
300  
250  
200  
150  
100  
50  
10  
9
8
7
6
5
4
3
2
1
0
V
= 20V  
DS  
I
I
= 170A  
= 10mA  
D
G
T
J
= 150ºC  
T
J
= 25ºC  
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
0
30  
60  
90  
120  
150  
180  
210  
240  
270  
QG - NanoCoulombs  
VSD - Volts  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
1,000  
100000  
10000  
1000  
RDS(on) Limit  
= 1 MHz  
f
100µs  
C
iss  
100  
10  
1
External Lead  
Current Limit  
C
oss  
1ms  
C
rss  
T
= 175ºC  
= 25ºC  
J
T
10ms  
100ms  
C
Single Pulse  
DC  
100  
0
5
10  
15  
20  
25  
30  
35  
40  
1
10  
100  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTA340N04T4  
IXTA340N04T4-7  
Fig. 13. Resistive Turn-on Rise Time  
vs. Junction Temperature  
Fig. 14. Resistive Turn-on Rise Time  
vs. Drain Current  
64  
62  
60  
58  
56  
54  
52  
50  
66  
64  
62  
60  
58  
56  
54  
52  
R
= 3ꢀ , V = 10V  
GS  
R
= 3ꢀ , V = 10V  
G
G
GS  
V
= 20V  
V
= 20V  
DS  
DS  
I
= 170A  
D
I
T = 150ºC  
J
= 340A  
D
T = 25ºC  
J
25  
50  
75  
100  
125  
150  
160  
180  
200  
220  
240  
260  
280  
300  
320  
340  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on Switching Times  
vs. Gate Resistance  
Fig. 16. Resistive Turn-off Switching Times  
vs. Junction Temperature  
500  
400  
300  
200  
100  
0
100  
50  
140  
t r  
td(on)  
t f  
td(off)  
48  
46  
44  
42  
40  
38  
36  
130  
120  
110  
100  
90  
TJ = 150ºC, V = 10V  
R = 3ꢀ, V = 10V  
G GS  
GS  
80  
60  
40  
20  
0
V
= 20V  
V
= 20V  
DS  
DS  
I
= 170A  
D
I
= 340A  
D
I
= 170A  
D
I
= 340A  
D
80  
70  
25  
50  
75  
100  
125  
150  
2
4
6
8
10  
12  
14  
16  
18  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 18. Resistive Turn-off Switching Times  
vs. Gate Resistance  
Fig. 17. Resistive Turn-off Switching Times  
vs. Drain Current  
350  
300  
250  
200  
150  
100  
50  
700  
600  
500  
400  
300  
200  
100  
0
52  
50  
48  
46  
44  
42  
40  
38  
36  
125  
120  
115  
110  
105  
100  
95  
t f  
td(off)  
t f  
td(off)  
R
G
= 3Ω, VGS = 10V  
T = 150ºC, V = 10V  
J GS  
VDS = 20V  
V
= 20V  
DS  
I
= 170A  
D
T
J
= 150ºC  
I
= 340A  
D
T
J
= 25ºC  
90  
0
85  
2
4
6
8
10  
12  
14  
16  
18  
160  
180  
200  
220  
240  
260  
280  
300  
320  
340  
ID - Amperes  
RG - Ohms  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXTA340N04T4  
IXTA340N04T4-7  
Fig. 19. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
TO-263 (7-lead) (IXTA..7) Outline  
TO-263 (IXTA) Outline  
E
A
OPTIONAL  
E
A
E1  
4
L2  
c2  
L2  
c2  
D1  
D
D1  
L
D
1
2
3
L
8
b2  
E1  
1
2 3 4 5 6 7  
L3  
b
c
e
L3  
L1  
1 = Gate  
2,4 = Drain  
3 = Source  
A1  
L1  
c
e
L4  
b
0- 8  
A1  
0- 3  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_340N04T4(T6-M04) 1-27-16  
厂商 型号 描述 页数 下载

IXYS

 		IXTA-200N085T N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ] 5 页

LITTELFUSE

 		IXTA02N250 [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN ] 5 页

IXYS

 		IXTA02N250HV [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 ] 5 页

LITTELFUSE

 		IXTA02N250HV [ Power Field-Effect Transistor, ] 6 页

IXYS

 		IXTA02N250HV-TRL [ Power Field-Effect Transistor, ] 5 页

IXYS

 		IXTA02N450HV 高电压功率MOSFET[ High Voltage Power MOSFETs ] 5 页

IXYS

 		IXTA05N100 高电压的MOSFET[ High Voltage MOSFET ] 4 页

IXYS

 		IXTA05N100-TRL [ Power Field-Effect Transistor, ] 5 页

LITTELFUSE

 		IXTA05N100HVTRL [ Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN ] 4 页

IXYS

 		IXTA05N100P [ Fast Intrinsic Diode ] 7 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.206748s