PZTA42/43
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
V
PZTA42
PZTA43
PZTA42
PZTA43
300
200
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
V
300
V
VCEO
200
V
Emitter-Base Voltage
Collector Current
VEBO
IC
6
V
500
mA
W
°C
°C
Collector Power Dissipation
Junction Temperature
Storage Temperature
Pc
1
TJ
150
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
300
200
300
200
6
TYP
MAX UNIT
PZTA42
PZTA43
PZTA42
PZTA43
V
V
V
V
V
Collector-Base Breakdown Voltage
BVCBO IC =100μA, IE=0
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
BVCEO IC =1mA, IB=0
BVEBO IE=100μA, IC =0
VCB=200V, IE=0
ICBO
PZTA42
PZTA43
PZTA42
PZTA43
100
100
100
100
nA
nA
nA
nA
VCB=160V, IE=0
VBE=6V, IC =0
IEBO
Emitter Cut-Off Current
DC Current Gain
VBE=4V, IC =0
V
CE=10V, IC =1mA
80
80
80
hFE
VCE=10V, IC =10mA
VCE=10V, IC 30mA
300
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
VCE(SAT) IC =20mA, IB=2mA
VBE(SAT) IC =20mA, IB=2mA
0.2
V
V
0.90
fT
VCE=20V, IC =10mA, f=100MHz
50
MHz
pF
PZTA42
VCB=20V, IE=0, f=1MHz
PZTA43
3
4
Collector Base Capacitance
CCB
pF
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R207-005.E
www.unisonic.com.tw
