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QPA1001

型号：

QPA1001

品牌：

TRIQUINT[ TRIQUINT SEMICONDUCTOR ]

页数：

15 页

PDF大小：

1366 K

下载PDF手册
QPA1001  
3.1ꢀ–ꢀ3.5 GHz 60 Watt GaN Power Amplifier  
Product Description  
Qorvo’s QPA1001 is a high-power, S-band amplifier  
fabricated on Qorvo’s QGaN25 0.25um GaN on SiC  
production process. Covering 3.1-3.5 GHz, the QPA1001  
typically provides 48 dBm of saturated output power and 22  
dB of large-signal gain while achieving 54 % power-added  
efficiency.  
The QPA1001 can also support a variety of operating  
conditions to best support system requirements. With good  
thermal properties, it can support a range of bias voltages  
and will perform well under pulse applications. The  
QPA1001 is matched to 50 ohms with integrated DC  
blocking caps on both I/O ports. The QPA1001 utilizes a  
plastic QFN overmolded package, which is ideal for use in  
both commercial and military radar systems.  
Product Features  
• Frequency Range: 3.1 – 3.5 GHz  
• Pout: 48 dBm (PIN = 26 dBm, 3.3 GHz)  
• Large Signal Gain: 22 dB (PIN = 26 dBm)  
• PAE: 54 % (PIN = 26 dBm)  
Lead-free and RoHS compliant.  
Evaluation boards are available upon request.  
• Bias: VD = 30 V, IDQ = 200 mA, VG = −2.8 V (Typ)  
• Plastic Overmold QFN Package  
• Package Dimensions: 7.0 x 7.0 x 0.85 mm  
Performance is typical across frequency. Please  
reference electrical specification table and data plots  
for more details.  
Functional Block Diagram  
48 47 46 45 44 43 42 41 40 39 38 37  
Applications  
36  
1
2
• Military Radar  
35  
34  
• Commercial Radar  
3
33  
4
32  
5
31 RF Out  
RF In  
RF In  
6
30 RF Out  
7
29  
28  
27  
26  
25  
8
9
10  
11  
12  
Ordering Information  
13 14 15 16 17 18 19 20 21 22 23 24  
Part  
ECCN  
Description  
3.1–3.5 GHz 60 W GaN  
Power Amplifier  
QPA1001  
EAR99  
QPA1001-  
EVB  
QPA1001 Evaluation  
Board  
EAR99  
- 1 of 15 -  
Data Sheet Rev. A, September 25, 2017  
www.qorvo.com  
QPA1001  
3.1ꢀ–ꢀ3.5 GHz 60 Watt GaN Power Amplifier  
Electrical Specifications  
Test conditions, unless otherwise noted: 25 °C, VD = 30 V, IDQ = 200 mA, Pulse Width = 100 us, Duty Cycle = 10%  
Parameter  
Operational Frequency Range  
Min  
3.1  
Typ  
3.3  
Max  
3.5  
Units  
GHz  
Frequency = 3.1 GHz  
48.0  
48.7  
48.0  
53.9  
54.1  
52.7  
25.5  
25.3  
25.6  
16.3  
12.5  
10.4  
14.2  
9.8  
Output Power @ PIN = 26ꢀdBm Frequency = 3.3 GHz  
Frequency = 3.5 GHz  
dBm  
%
Frequency = 3.1 GHz  
Power Added Efficiency  
Frequency = 3.3 GHz  
@ PIN = 26ꢀdBm  
Frequency = 3.5 GHz  
Frequency = 3.1 GHz  
Small Signal Gain  
Input Return Loss  
Output Return Loss  
Frequency = 3.3 GHz  
Frequency = 3.5 GHz  
Frequency = 3.1 GHz  
Frequency = 3.3 GHz  
Frequency = 3.5 GHz  
Frequency = 3.1 GHz  
Frequency = 3.3 GHz  
Frequency = 3.5 GHz  
dB  
dB  
dB  
8.6  
Output Power Temperature Coefficient  
Recommended Operating Drain Voltage  
-0.001  
30  
dBm/°C  
V
Recommended Operating Conditions  
Parameter  
Drain Voltage  
Value  
30 V  
Drain Current (quiescent, IDQ  
)
200 mA  
4.5 A  
Drain Current (under drive, ID)  
Gate Voltage  
-2.8 V  
Operating Temperature Range  
−40 to 85ꢀ°C  
Electrical specifications are measured at specified test  
conditions. Specifications are not guaranteed over all  
recommended operating conditions.  
- 2 of 15 -  
Data Sheet Rev. A, September 25, 2017  
www.qorvo.com  
QPA1001  
3.1ꢀ–ꢀ3.5 GHz 60 Watt GaN Power Amplifier  
Performance Plotsꢀ–ꢀ Large Signal (Pulsed)  
Test conditions unless otherwise noted: Temp. = 25 °C, VD = 30 V, IDQ = 200 mA, PW = 100 us, Duty Cycle = 10%  
Output Power vs. Freq. vs. Temp.  
Output Power vs. Freq. vs. Input Power  
50  
49  
48  
47  
46  
45  
50  
49  
48  
47  
46  
45  
PIN = 26 dBm  
22 dBm  
23 dBm  
24 dBm  
25 dBm  
26 dBm  
-40 C  
+25 C  
+85 C  
3.0  
3.1  
3.2  
3.3  
Frequency (GHz)  
3.4  
3.5  
3.6  
3.6  
3.6  
3.0  
3.1  
3.2  
3.3  
Frequency (GHz)  
3.4  
3.5  
3.6  
Power Added Eff. vs. Freq. vs. Input Power  
Power Added Eff. vs. Freq. vs. Temp.  
65  
60  
55  
50  
45  
40  
35  
65  
60  
55  
50  
45  
40  
35  
PIN = 26 dBm  
22 dBm  
23 dBm  
24 dBm  
25 dBm  
26 dBm  
-40 C  
+25 C  
+85 C  
3.0  
3.1  
3.2 3.3  
Frequency (GHz)  
3.4  
3.5  
3.0  
3.1  
3.2 3.3  
Frequency (GHz)  
3.4  
3.5  
3.6  
Drain Current vs. Freq. vs. Temp.  
Drain Current vs. Freq. vs. Input Power  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
PIN = 26 dBm  
22 dBm  
23 dBm  
24 dBm  
25 dBm  
26 dBm  
-40 C  
3.2  
+25 C  
3.3  
+85 C  
3.4  
3.0  
3.1  
3.5  
3.0  
3.1  
3.2 3.3  
Frequency (GHz)  
3.4  
3.5  
3.6  
Frequency (GHz)  
- 3 of 15 -  
Data Sheet Rev. A, September 25, 2017  
www.qorvo.com  
QPA1001  
3.1ꢀ–ꢀ3.5 GHz 60 Watt GaN Power Amplifier  
Performance Plotsꢀ–ꢀ Large Signal (Pulsed)  
Test conditions unless otherwise noted: Temp. = 25 °C, VD = 30 V, IDQ = 200 mA, PW = 100 us, Duty Cycle = 10%  
Output Power vs. Input Power vs. Freq.  
PAE vs. Input Power vs. Freq.  
50  
45  
40  
35  
30  
25  
20  
70  
60  
50  
40  
30  
20  
10  
0
3.1 GHz  
3.3 GHz  
3.5 GHz  
3.1 GHz  
3.3 GHz  
3.5 GHz  
2
4
6
8
10 12 14 16 18 20 22 24 26  
Input Power (dBm)  
2
4
6
8
10 12 14 16 18 20 22 24 26  
Input Power (dBm)  
Drain Current vs. Input Power vs. Freq.  
Gain vs. Input Power vs. Freq.  
35  
30  
25  
20  
15  
10  
5
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
3.1 GHz  
3.3 GHz  
3.5 GHz  
3.1 GHz  
3.3 GHz  
3.5 GHz  
0
2
4
6
8
10 12 14 16 18 20 22 24 26  
Input Power (dBm)  
2
4
6
8
10 12 14 16 18 20 22 24 26  
Input Power (dBm)  
Gate Current vs. Input Power vs. Freq.  
12  
10  
8
6
3.1 GHz  
3.3 GHz  
3.5 GHz  
4
2
0
-2  
2
4
6
8
10 12 14 16 18 20 22 24 26  
Input Power (dBm)  
- 4 of 15 -  
Data Sheet Rev. A, September 25, 2017  
www.qorvo.com  
QPA1001  
3.1ꢀ–ꢀ3.5 GHz 60 Watt GaN Power Amplifier  
Performance Plotsꢀ–ꢀ Large Signal (Pulsed)  
Test conditions unless otherwise noted: Temp. = 25 °C, VD = 30 V, IDQ = 200 mA, PW = 100 us, Duty Cycle = 10%  
Output Power vs. Input Power vs. Temp.  
PAE vs. Input Power vs. Temp.  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
70  
60  
50  
40  
30  
20  
10  
0
Freq. = 3.3 GHz  
Freq. = 3.3 GHz  
-40 C  
+25 C  
+85 C  
0
-40 C +25 C +85 C  
-5  
2
4
6
8
10 12 14 16 18 20 22 24 26  
Input Power (dBm)  
2
4
6
8
10 12 14 16 18 20 22 24 26  
Input Power (dBm)  
Drain Current vs. Input Power vs. Temp.  
Gain vs. Input Power vs. Temp.  
35  
30  
25  
20  
15  
10  
5
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
Freq. = 3.3 GHz  
Freq. = 3.3 GHz  
-40 C  
-40 C  
+25 C  
+85 C  
+25 C  
+85 C  
0
-5  
2
4
6
8
10 12 14 16 18 20 22 24 26  
Input Power (dBm)  
2
4
6
8
10 12 14 16 18 20 22 24 26  
Input Power (dBm)  
Gate Current vs. Input Power vs. Temp.  
24  
22  
20  
18  
16  
14  
12  
10  
8
Freq. = 3.3 GHz  
-40 C  
+25 C  
+85 C  
6
4
2
0
-2  
2
4
6
8
10 12 14 16 18 20 22 24 26  
Input Power (dBm)  
- 5 of 15 -  
Data Sheet Rev. A, September 25, 2017  
www.qorvo.com  
QPA1001  
3.1ꢀ–ꢀ3.5 GHz 60 Watt GaN Power Amplifier  
Performance Plotsꢀ–ꢀ Large Signal (Pulsed)  
Test conditions unless otherwise noted: Temp. = 25 °C, IDQ = 200 mA  
Output Power vs. Freq. vs. Temp.  
VD = 28V, PW = 100us, DC = 10%, PIN = 25 dBm  
Output Power vs. Freq. vs. Temp.  
VD = 30V, PW = 300us, DC = 20%, PIN = 26 dBm  
50  
50  
49  
48  
47  
46  
45  
49  
48  
47  
-40 C  
-40 C  
46  
+25 C  
+25 C  
+85 C  
+85 C  
45  
3.0  
3.1  
3.2  
3.3  
Frequency (GHz)  
3.4  
3.5  
3.6  
3.6  
3.6  
3.0  
3.1  
3.2  
3.3  
Frequency (GHz)  
3.4  
3.5  
3.6  
3.6  
3.6  
Power Added Eff. vs. Freq. vs. Temp.  
Power Added Eff. vs. Freq. vs. Temp.  
65  
60  
55  
50  
45  
40  
35  
65  
60  
55  
50  
45  
40  
35  
VD = 28V, PW = 100 us, DC = 1-%, PIN = 25 dBm  
VD = 30V, PW = 300 us, DC = 20%, PIN = 26 dBm  
-40 C  
+25 C  
+85 C  
-40 C  
+25 C  
+85 C  
3.0  
3.1  
3.2 3.3  
Frequency (GHz)  
3.4  
3.5  
3.0  
3.1  
3.2 3.3  
Frequency (GHz)  
3.4  
3.5  
Drain Current vs. Freq. vs. Temp.  
Drain Current vs. Freq. vs. Temp.  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
VD = 28V, PW = 100us, DC = 10%, PIN = 25 dBm  
VD = 30V, PW = 300us, DC = 20%, PIN = 26 dBm  
-40 C  
3.2  
+25 C  
3.3  
+85 C  
3.4  
-40 C  
3.2  
+25 C  
3.3  
+85 C  
3.4  
3.0  
3.1  
3.5  
3.0  
3.1  
3.5  
Frequency (GHz)  
Frequency (GHz)  
- 6 of 15 -  
Data Sheet Rev. A, September 25, 2017  
www.qorvo.com  
QPA1001  
3.1ꢀ–ꢀ3.5 GHz 60 Watt GaN Power Amplifier  
Performance Plotsꢀ–ꢀ Harmonics (Pulsed)  
Test conditions unless otherwise noted: Temp. = 25 °C, PW = 100 us, Duty Cycle = 10%  
2nd Harmonic vs. POUT vs. Freq.  
3rd Harmonic vs. POUT vs. Freq.  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
-45  
-50  
-30  
-35  
-40  
-45  
-50  
-55  
-60  
-65  
-70  
-75  
-80  
VD = 30 V, IDQ = 200 mA  
VD = 30 V, IDQ = 200 mA  
3.1 GHz  
3.3 GHz  
3.5 GHz  
3.1 GHz  
3.3 GHz  
3.5 GHz  
16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50  
Output Power (dBm)  
16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50  
Output Power (dBm)  
2nd Harmonic vs. POUT vs. Temp.  
VD = 30 V, IDQ = 200 mA, F0 = 3.3 GHz  
3rd Harmonic vs. POUT vs. Temp.  
VD = 30 V, IDQ = 200 mA, F0 = 3.3 GHz  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
-45  
-50  
-30  
-35  
-40  
-45  
-50  
-55  
-60  
-65  
-70  
-75  
-80  
−40 C  
+25 C  
+85 C  
−40 C  
+25 C  
+85 C  
16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50  
Output Power (dBm)  
16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50  
Output Power (dBm)  
2nd Harmonic vs. POUT vs. VD  
3rd Harmonic vs. POUT vs. VD  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
-45  
-50  
-30  
-35  
-40  
-45  
-50  
-55  
-60  
-65  
-70  
-75  
-80  
IDQ = 200 mA, F0 = 3.3 GHz  
IDQ = 200 mA, F0 = 3.3 GHz  
28 V  
30 V  
28 V  
30 V  
16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50  
Output Power (dBm)  
16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50  
Output Power (dBm)  
- 7 of 15 -  
Data Sheet Rev. A, September 25, 2017  
www.qorvo.com  
QPA1001  
3.1ꢀ–ꢀ3.5 GHz 60 Watt GaN Power Amplifier  
Performance Plotsꢀ–ꢀSmall Signal  
Test conditions unless otherwise noted: Temp. = 25 °C, VD = 30 V, IDQ = 200 mA  
Gain vs. Freq. vs. Temp.  
Gain vs. Frequency vs. VD  
35  
30  
25  
20  
15  
10  
5
30  
28  
26  
24  
22  
20  
18  
16  
14  
12  
10  
28 V  
30 V  
32 V  
3.8  
-40 C  
3.2  
+25 C  
3.4  
+85 C  
3.6 3.8  
0
2.6  
2.8  
2.8  
2.8  
3.0  
4.0  
4.0  
4.0  
4.2  
4.2  
4.2  
2.6  
2.8  
3.0  
3.2 3.4  
Frequency (GHz)  
3.6  
4.0  
4.2  
4.2  
4.2  
Frequency (GHz)  
Input RL vs. Freq. vs. Temp.  
Input RL vs. Frequency vs. VD  
0
0
-5  
-10  
-15  
-20  
-25  
-30  
-5  
-10  
-15  
-20  
-25  
-30  
-40 C  
3.2  
+25 C  
3.4  
+85 C  
3.6 3.8  
28 V  
30 V  
32 V  
3.8  
2.6  
3.0  
2.6  
2.8  
3.0  
3.2 3.4  
Frequency (GHz)  
3.6  
4.0  
Frequency (GHz)  
Output RL vs. Freq. vs. Temp.  
Output RL vs. Frequency vs. VD  
0
-5  
0
-5  
-10  
-15  
-20  
-25  
-30  
-10  
-15  
-20  
-25  
-30  
-40 C  
3.2  
+25 C  
3.4  
+85 C  
3.6 3.8  
28 V  
30 V  
32 V  
3.8  
2.6  
3.0  
2.6  
2.8  
3.0  
3.2 3.4  
Frequency (GHz)  
3.6  
4.0  
Frequency (GHz)  
- 8 of 15 -  
Data Sheet Rev. A, September 25, 2017  
www.qorvo.com  
QPA1001  
3.1ꢀ–ꢀ3.5 GHz 60 Watt GaN Power Amplifier  
Performance Plotsꢀ–ꢀSmall Signal  
Test conditions unless otherwise noted: Temp. = 25 °C, VD = 30 V, IDQ = 200 mA  
Gain vs. Frequency vs. IDQ  
Input RL vs. Freq. vs. IDQ  
35  
30  
25  
20  
15  
10  
5
0
-5  
-10  
-15  
-20  
-25  
-30  
100 mA  
3.2  
200 mA  
3.4  
300 mA  
3.8  
100 mA  
3.2  
200 mA  
3.4  
300 mA  
3.8  
0
2.6  
2.8  
3.0  
3.6  
4.0  
4.2  
2.6  
2.8  
3.0  
3.6  
4.0  
4.2  
Frequency (GHz)  
Frequency (GHz)  
Output RL vs. Freq. vs. IDQ  
0
-5  
-10  
-15  
-20  
-25  
100 mA  
3.4  
Frequency (GHz)  
200 mA  
3.8  
300 mA  
4.0 4.2  
-30  
2.6  
2.8  
3.0  
3.2  
3.6  
- 9 of 15 -  
Data Sheet Rev. A, September 25, 2017  
www.qorvo.com  
QPA1001  
3.1ꢀ–ꢀ3.5 GHz 60 Watt GaN Power Amplifier  
Thermal and Reliability Information  
Parameter  
Test Conditions  
Value  
0.69  
Units  
°C/W  
°C  
Thermal Resistance (θJC) (1)  
Channel Temperature (TCH) (Under RF drive)  
Median Lifetime (TM)  
Tbase = 85°C, VD = 30 V, IDQ = 200 mA, Freq = 3.32  
GHz, ID_Drive = 4.46 A, PIN = 26 dBm, POUT = 48.6 dBm,  
PDISS = 61.6 W, PW = 100 us, DC = 10%  
132  
1.50E10  
0.96  
Hrs  
Thermal Resistance (θJC) (1)  
Channel Temperature (TCH) (Under RF drive)  
Median Lifetime (TM)  
°C/W  
°C  
Tbase = 85°C, VD = 30 V, IDQ = 200 mA, Freq = 3.32  
GHz, ID_Drive = 4.31 A, PIN = 26 dBm, POUT = 48.4 dBm,  
PDISS = 60.5 W, PW = 300 us, DC = 20%  
150  
1.75E09  
Hrs  
Notes:  
1. Thermal resistance measured to back of package.  
Median Lifetime  
Test Conditions: VD = +40ꢀV; Failure Criteria = 10ꢀ% reduction in ID_MAX during DC Life Testing  
Median Lifetime vs. TCH  
Dissipated Power vs. Freq. vs. VD  
1E+18  
1E+17  
1E+16  
1E+15  
1E+14  
1E+13  
1E+12  
1E+11  
1E+10  
1E+09  
1E+08  
1E+07  
1E+06  
1E+05  
1E+04  
80  
PIN = 25 dBm  
75  
70  
65  
60  
55  
50  
45  
40  
28V 100us 85C  
30V 100us 85C  
30V 300us 85C  
32V 100us 85C  
35  
30  
FET13  
25  
50  
75 100 125 150 175 200 225 250 275  
Channel Temperature (°C)  
3.0  
3.1  
3.2  
3.3  
Frequency (GHz)  
3.4  
3.5  
3.6  
- 10 of 15 -  
Data Sheet Rev. A, September 25, 2017  
www.qorvo.com  
QPA1001  
3.1ꢀ–ꢀ3.5 GHz 60 Watt GaN Power Amplifier  
Applications Circuit  
VG2  
R7  
0 Ω  
C8  
0.01 uF  
C9  
1000 pF  
R4  
10 Ω  
C7  
10 uF  
R8  
10 Ω  
VG1  
C3  
1000 pF  
R6  
0 Ω  
VD2  
C12  
1000 pF  
C11  
0.01 uF  
VD1  
48 46 44  
38  
C6  
1000 pF  
R10  
10 Ω  
6,7  
30,31  
RF In  
RF Out  
R19  
10 Ω  
C16  
1000 pF  
C23  
0.01 uF  
C22  
1000 pF  
13 15 17  
23  
VD1  
R17  
0 Ω  
VD2  
C13  
1000 pF  
R16  
10 Ω  
C21  
10 uF  
VG1  
R13  
10 Ω  
C20  
0.01 uF  
C19  
1000 pF  
R18  
0 Ω  
VG2  
Notes:  
1. VG and VD must be biased from both sides (top and bottom).  
Bias Up Procedure  
1. Set ID limit to 6000mA, IG limit to 40mA  
2. Set VG to −6.0 V  
Bias Down Procedure  
1. Turn off RF supply  
2. Reduce VG to −6.0V. Ensure IDQ ~ 0mA  
3. Set VD to 0ꢀV  
3. Set VD +25 V  
4. Adjust VG more positive until IDQ = 200mA (VG ~  
−2.8 V Typical)  
4. Turn off VD supply  
5. Turn off VG supply  
5. Apply RF signal  
- 11 of 15 -  
Data Sheet Rev. A, September 25, 2017  
www.qorvo.com  
QPA1001  
3.1ꢀ–ꢀ3.5 GHz 60 Watt GaN Power Amplifier  
Evaluation Board and Mounting Detail  
RF Layer is 0.008” thick Rogers Corp. RO40003C (εr = 3.35). Metal layers are 0.5 oz. copper. The microstrip line at the  
connector interface is optimized for the Southwest Microwave end launch connector 1092-02A-5.  
Bill of Materials  
Ref. Des.  
Component  
Value  
Manuf. Part Number  
C7, C21  
Surface Mount Cap.  
CAP, 1206, 10uF, 20%, 50V, 20%, X5R  
Various  
C3, C6, C9, C12, C13,  
C16, C19, C22  
Surface Mount Cap.  
CAP, 0402, 1000pF, 10%, 100V, X7R  
Various  
C8, C11, C20, C23  
R8, R10, R16, R19  
R4, R13  
Surface Mount Cap.  
Surface Mount Res.  
Surface Mount Res.  
Surface Mount Res.  
CAP, 0402, 0.01uF, 10%, 50V, X7R  
RES, 10 OHM 5% 0402  
Various  
Various  
Various  
Various  
RES, 10 OHM 1/10W 5% 0603  
RES, 0 OHM 5% 0603  
R6, R7,ꢀR16, R18  
- 12 of 15 -  
Data Sheet Rev. A, September 25, 2017  
www.qorvo.com  
QPA1001  
3.1ꢀ–ꢀ3.5 GHz 60 Watt GaN Power Amplifier  
Mechanical Information  
Pin Description  
Pin Number  
Symbol  
Description  
1-5, 8-12, 14, 16, 18-22, 24-29,  
32-37, 39-43, 45, 47  
NC  
No connection. Can be grounded on PCB if desired.  
50 Ohm RF input. Pad is capacitively coupled to block on-chip  
DC voltages.  
1st Stage Gate Voltage; bias network is required; must be biased  
from both sides (VG1 and VG2 can be tied together in application)  
1st Stage Drain Voltage; bias network is required; must be biased  
from both sides (VD1 and VD2 can be tied together in application)  
2nd Stage Gate Voltage; bias network is required; must be biased  
from both sides (VG1 and VG2 can be tied together in application)  
6, 7  
RF Input  
VG1  
13, 48  
15, 46  
17, 44  
23, 38  
VD1  
VG2  
2nd Stage Drain Voltage; bias network is required; must be biased  
from both sides (VD1 and VD2 can be tied together in application)  
VD2  
50 Ohm RF output. Pad is capacitively coupled to block on-chip  
DC voltages.  
30, 31  
RF Output  
GND  
49 (center pad)  
Ground connection.  
- 13 of 15 -  
Data Sheet Rev. A, September 25, 2017  
www.qorvo.com  
QPA1001  
3.1ꢀ–ꢀ3.5 GHz 60 Watt GaN Power Amplifier  
QPA1001 Ig_max vs. Tch  
Absolute Maximum Ratings  
160  
Parameter  
Valueꢀ/ꢀRange  
40 V  
140  
Drain Voltage (VD)  
Drain Current (ID1/ID2)  
Gate Voltage Range  
120  
100  
80  
60  
40  
20  
0
Stage 1  
Stage 2  
0.80/5.70 A  
−6 to 1 V  
See IG_Max plot  
W
Total Ig_max  
Gate Current (IG)  
1
Dissipated Power (PDISS  
)
Input Power (VD=30V, 50 ꢁ, 85 °C)  
Input Power (4:1 VSWR, 85 °C)  
Channel Temperature, TCH  
31 dBm  
28 dBm  
275 °C  
120 130 140 150 160 170 180 190 200 210 220 230  
Mounting Temperature (30 seconds)  
Storage Temperature  
260 °C  
Channel Temperature (°C)  
−55 to 150 °C  
Note:  
1 TBASE = 85 °C, TCH = 225 °C  
Operation of this device outside the parameter ranges given above  
may cause permanent damage. These are stress ratings only, and  
functional operation of the device at these conditions is not implied.  
Recommended Soldering Temperature Profile  
- 14 of 15 -  
Data Sheet Rev. A, September 25, 2017  
www.qorvo.com  
QPA1001  
3.1ꢀ–ꢀ3.5 GHz 60 Watt GaN Power Amplifier  
Handling Precautions  
Parameter  
Rating  
Standard  
ESDꢀ–ꢀHuman Body Model (HBM)  
ESDꢀ–ꢀCharge Device Model (CDM)  
MSLꢀ–ꢀMoisture Sensitivity Level  
Class 0B (≤200V) ANSI/ESD/JEDEC JS-001  
Caution!  
ESD-Sensitive Device  
TBD  
ANSI/ESD/JEDEC JS-002  
IPC/JEDEC J-STD-020  
Level 3  
Solderability  
Compatible with the latest version of J-STD-020 Lead free solder, 260 °C.  
RoHS Compliance  
This product is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances  
in Electrical and Electronic Equipment), as amended by Directive 2015/863/EU. This product also has the following  
attributes:  
•
Lead Free  
• Halogen Free (Chlorine, Bromine)  
• Antimony Free  
• TBBP-A (C15H12Br402) Free  
• PFOS Free  
• SVHC Free  
• Qorvo Green  
Contact Information  
For the latest specifications, additional product information, worldwide sales and distribution locations:  
Tel: 1-844-890-8163  
Web: www.qorvo.com  
Email: customer.support@qorvo.com  
For technical questions and application information: Email: applications.engineering@qorvo.com  
Important Notice  
The information contained herein is believed to be reliable. Qorvo makes no warranties regarding the information contained  
herein. Qorvo assumes no responsibility or liability whatsoever for any of the information contained herein. Qorvo assumes  
no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is  
provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user.  
All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant  
information before placing orders for Qorvo products. The information contained herein or any use of such information does  
not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether  
with regard to such information itself or anything described by such information.  
Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining  
applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.  
Copyright 2017 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.  
- 15 of 15 -  
Data Sheet Rev. A, September 25, 2017  
www.qorvo.com  
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