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VVZ40

型号:

VVZ40

描述:

三相半控整流桥[ Three Phase Half Controlled Rectifier Bridge ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

52 K

VVZ 40  
IdAVM = 43 A  
VRRM = 1200-1600 V  
Three Phase Half Controlled  
Rectifier Bridge  
4
3
2
1
6
3
8
1
VRSM  
VDSM  
VRRM  
VDRM  
Type  
2
7
6
5
V
V
5
7
4
1300  
1500  
1700  
1200  
1400  
1600  
VVZ 40-12io1  
VVZ 40-14io1  
VVZ 40-16io1  
8
Features  
Symbol  
Test Conditions  
Maximum Ratings  
Package with DCB ceramic base plate  
Isolation voltage 3600 V~  
Planar passivated chips  
Soldering terminals  
IdAV  
IdAVM  
IFRMS, ITRMS  
TK = 100°C; module  
module  
per leg  
34  
43  
25  
A
A
A
IFSM, ITSM  
TVJ = 45°C;  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
320  
340  
A
A
UL registered E 72873  
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
290  
310  
A
A
Applications  
Input rectifier for switch mode power  
I2t  
TVJ = 45°C  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
510  
485  
A2s  
A2s  
supplies (SMPS)  
Softstart capacitor charging  
Electric drives and auxiliaries  
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
420  
400  
A2s  
A2s  
Advantages  
(di/dt)cr  
TVJ = TVJM  
repetitive, IT = 50 A  
150  
A/µs  
Easy to mount with two screws  
Space and weight savings  
Improved temperature and power  
cycling  
f =400 Hz, tP =200 µs  
VD = 2/3 VDRM  
IG = 0.3 A,  
non repetitive, IT = 1/3 • IdAV  
500  
1000  
10  
A/µs  
V/µs  
V
diG/dt = 0.3 A/µs  
(dv/dt)cr  
TVJ = TVJM; VDR = 2/3 VDRM  
RGK = ; method 1 (linear voltage rise)  
Dimensions in mm (1 mm = 0.0394")  
VRGM  
PGM  
TVJ = TVJM  
IT = ITAVM  
tp = 30 µs  
tp = 500 µs  
tp = 10 ms  
10  
5
1
W
W
W
W
PGAVM  
0.5  
TVJ  
TVJM  
Tstg  
-40...+125  
125  
-40...+125  
°C  
°C  
°C  
VISOL  
50/60 Hz, RMS  
t = 1 min  
t = 1 s  
3000  
3600  
V~  
V~  
I
ISOL 1 mA  
Md  
Mounting torque  
(M5)  
(10-32 UNF)  
2-2.5  
18-22  
28  
Nm  
lb.in.  
g
Weight  
typ.  
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2003 IXYS All rights reserved  
1 - 2  
VVZ 40  
Symbol  
IR, ID  
Test Conditions  
Characteristic Values  
VR = VRRM; VD = VDRM  
TVJ = TVJM  
TVJ = 25°C  
£
£
5
mA  
0.3 mA  
VF, VT  
IF, IT = 30 A, TVJ = 25°C  
£
1.33  
0.85  
15 mW  
V
V
VT0  
rT  
For power-loss calculations only  
(TVJ = 125°C)  
VGT  
IGT  
VD = 6 V;  
VD = 6 V;  
TVJ = 25°C  
TVJ = -40°C  
TVJ = 25°C  
TVJ = -40°C  
TVJ = 125°C  
£
£
£
£
£
1.0  
1.2  
65 mA  
80 mA  
50 mA  
V
V
VGD  
IGD  
TVJ = TVJM  
TVJ = TVJM  
;
;
VD = 2/3 VDRM  
VD = 2/3 VDRM  
£
£
0.2  
5
V
mA  
IL  
IG = 0.3 A; tG = 30 ms  
diG/dt = 0.3 A/ms  
TVJ = 25°C  
TVJ = -40°C  
TVJ = 125°C  
£
£
£
150 mA  
200 mA  
100 mA  
IH  
TVJ = 25°C; VD = 6 V; RGK = ¥  
£
£
100 mA  
tgd  
TVJ = 25°C; VD = 1/2 VDRM  
IG = 0.3 A; diG/dt = 0.3 A/ms  
2
ms  
tq  
Qr  
TVJ = 125°C; IT = 15 A, tp = 300 ms, -di/dt = 10 A/ms  
VR = 100 V, dv/dt = 20 V/ms, VD = 2/3 VDRM  
typ. 150 ms  
75 mC  
RthJC  
RthJH  
per thyristor (diode); DC current  
per module  
per thyristor (diode); DC current  
per module  
1.0 K/W  
0.17 K/W  
1.6 K/W  
0.27 K/W  
dS  
dA  
a
Creeping distance on surface  
Creepage distance in air  
Max. allowable acceleration  
7 mm  
7 mm  
50 m/s2  
© 2003 IXYS All rights reserved  
2 - 2  
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